Abstract: The disclosure provides a pharmaceutical composition containing an anti-IgE antibody that suppresses the production of allergen-specific IgE antibodies and methods of use thereof.

Abstract: The invention is to provide a semiconductor manufacturing apparatus system and a semiconductor device manufacturing method for reducing particles having an adverse effect in a manufacturing step of a semiconductor device.

Abstract: A multilayered container includes at least a polyolefin inner layer; an adhesive layer; a gas-barrier layer; an oxygen-absorbing layer; a gas-barrier layer; an adhesive layer; a polyolefin outer layer, and having at least a body portion and a bottom portion, wherein the gas-barrier layers include an ethylene-vinyl alcohol copolymer, the oxygen-absorbing layer includes an oxygen-absorbing resin composition that contains the ethylene-vinyl alcohol copolymer and an oxidizing organic component, an adsorbing agent is contained on the side inside of said gas-barrier layer, the thickness of the multilayered container at the thinnest portion is not more than 430 ?m, and the amount of oxygen absorbed after the heat-sterilization is not less than 23 cc per gram of the oxygen-absorbing resin composition. Despite of this decreased thickness, the multilayered container maintains excellent oxygen-barrier property and property for retaining flavor of the content even when it is subjected to the retort sterilization.

Abstract: A multilayered container includes at least a polyolefin inner layer; an adhesive layer; a gas-barrier layer; an oxygen-absorbing layer; a gas-barrier layer; an adhesive layer; a polyolefin outer layer, and having at least a body portion and a bottom portion, wherein the gas-barrier layers include an ethylene-vinyl alcohol copolymer, the oxygen-absorbing layer includes an oxygen-absorbing resin composition that contains the ethylene-vinyl alcohol copolymer and an oxidizing organic component, an adsorbing agent is contained on the side inside of said gas-barrier layer, the thickness of the multilayered container at the thinnest portion is not more than 430 ?m, and the amount of oxygen absorbed after the heat-sterilization is not less than 23 cc per gram of the oxygen-absorbing resin composition. Despite of this decreased thickness, the multilayered container maintains excellent oxygen-barrier property and property for retaining flavor of the content even when it is subjected to the retort sterilization.

Abstract: The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.

Abstract: In a semiconductor that has a structure in which a work function controlling metal conductor is provided on a high dielectric insulation film, fine processing is performed without deteriorating a device. In a method of semiconductor processing, in which the semiconductor has an insulation film containing Hf or Zr formed on a semiconductor substrate and a conductor film containing Ti or Ta or Ru formed on an insulation film, and the conductor film is processed by using a resist formed on the conductor film under a plasma atmosphere, the resist is removed under the plasma atmosphere of gas that contains hydrogen and does not contain oxygen.

Abstract: The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.

Abstract: A high-quality oxygen-absorbing resin composition which is obtained without suffering resin scorching. Also provided are pellets for the oxygen-absorbing resin composition which comprise a thermoplastic resin (A) and an oxidation catalyst. After the pellets are mixed with a trigger resin and a thermoplastic resin (C), the trigger resin functions as a trigger to cause the oxidation of the thermoplastic resins (A) and (C) to proceed. As a result, the resultant composition absorbs oxygen.

Abstract: Line-wiggling and striation caused by collapse of a pattern after a silicon dioxide film is etched by plasma with the use of a multilayer resist mask are prevented or suppressed. In a plasma etching method of etching a film to be etched by plasma with the use of a multilayer resist mask, the multilayer resist mask includes an upper layer resist, an inorganic intermediate film, and a lower layer resist, and the method includes a side wall protective film forming step of forming a side wall protective film on a side wall of the lower layer resist.

Abstract: An overcharge protection circuit includes: a voltage detection portion which detects a terminal voltage of a secondary battery; and a control portion, having a normal state in which the secondary battery can be charged, a judgment execution state in which judgement as to whether the secondary battery is in an overcharged state is performed, and a first charging prohibition state in which charging of the secondary battery is prohibited, wherein in the normal state, when a terminal voltage detected by the voltage detection portion exceeds a first overcharge detection voltage set in advance as a voltage at which charging of the secondary battery is to be prohibited, the control portion transitions to the judgment execution state, in the judgment execution state, when an accumulated value, after the judgment execution state is established, of a time interval during which the terminal voltage detected by the voltage detection portion exceeds the first overcharge detection voltage, exceeds a first reference time se

Abstract: A high-quality oxygen-absorbing resin composition which is obtained without suffering resin scorching. Also provided are pellets for the oxygen-absorbing resin composition which comprise a thermoplastic resin (A) and an oxidation catalyst. After the pellets are mixed with a trigger resin and a thermoplastic resin (C), the trigger resin functions as a trigger to cause the oxidation of the thermoplastic resins (A) and (C) to proceed. As a result, the resultant composition absorbs oxygen.

Abstract: The invention provides a plasma processing apparatus capable of setting the temperature of the plasma processing chamber accurately to a specific state, and to perform highly accurate plasma processing while maintaining a constant plasma processing property.

Abstract: In a semiconductor that has a structure in which a work function controlling metal conductor is provided on a high dielectric insulation film, fine processing is performed without deteriorating a device. In a method of semiconductor processing, in which the semiconductor has an insulation film containing Hf or Zr formed on a semiconductor substrate and a conductor film containing Ti or Ta or Ru formed on an insulation film, and the conductor film is processed by using a resist formed on the conductor film under a plasma atmosphere, the resist is removed under the plasma atmosphere of gas that contains hydrogen and does not contain oxygen.

Abstract: There is disclosed an FED (field emission display) capable of supplying an anode voltage, which is a high voltage, to an anode substrate with high reliability. A high voltage introduction button is sealed to a sealing plate, in which a contact spring is attached to the high voltage introduction button by spot welding. The high voltage introduction button has a flat portion connected to the contact spring, a sealing portion sealed to the glass substrate, and an external terminal to be connected to an external power source. The contact spring contacts an anode terminal of an anode substrate with an appropriate contact pressure, by a spring force from an arm portion of the contact spring. The anode terminal is formed of a conductive film containing metal particles.

Abstract: A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.

Abstract: A high-quality oxygen-absorbing resin composition which is obtained without suffering resin scorching. Also provided are pellets for the oxygen-absorbing resin composition which comprise a thermoplastic resin (A) and an oxidation catalyst. After the pellets are mixed with a trigger resin and a thermoplastic resin (C), the trigger resin functions as a trigger to cause the oxidation of the thermoplastic resins (A) and (C) to proceed. As a result, the resultant composition absorbs oxygen.

Abstract: A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.

Abstract: In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

Abstract: A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.