Abstract: A method for manufacturing semiconductor devices includes a step of etching a sample including an interlayer insulating layer containing Al2O3 and a polysilicon or SiO2 layer in contact with the interlayer insulating layer using a plasma etching system. The interlayer insulating layer is etched with a gas mixture containing BCl3, Ar, and CH4 or He. The gas mixture further contains Cl2. The interlayer insulating layer is etched in such a manner that a time-modulated high-frequency bias voltage is applied to the sample. The interlayer insulating layer is etched in such a manner that the sample is maintained at a temperature of 100° C. to 200° C. The interlayer insulating layer and the polysilicon or SiO2 layer are separately etched in different chambers.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Abstract: In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Abstract: A resin composition obtained by blending a thermoplastic resin that can be melt-extruded at a solubility parameter of not smaller than 9.5 with an organic oxidizing component and with a transition metal catalyst, the organic oxidizing component being a polyene having a functional group on a side chain or at a terminal thereof. The resin composition has excellent moldability and gas shut-off property. A multi-layer container having an oxygen-absorbing layer of this resin composition exhibits excellent gas-barrier property and is capable of favorably preserving the content.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Abstract: A resin composition obtained by blending a thermoplastic resin that can be melt-extruded at a solubility parameter of not smaller than 9.5 with an organic oxidizing component and with a transition metal catalyst, the organic oxidizing component being a polyene having a functional group on a side chain or at a terminal thereof. The resin composition has excellent moldability and gas shut-off property. A multi-layer container having an oxygen-absorbing layer of this resin composition exhibits excellent gas-barrier property and is capable of favorably preserving the content.

Abstract: A bottle having substantially no strain due to fluidized orientation in the bottom portion thereof which is homogeneously and uniformly drawn, and, as a result, exhibiting improved shock resistance and buckling strength in the bottom portion, featuring excellent resistance against environmental cracking at the center in the bottom portion, without developing crazing or whitening during the preservation, and offering excellent appearance. The bottle is formed by biaxially stretch-blow-molding a thermoplastic resin, and has a mouth portion, a shoulder portion, a barrel portion and a bottom portion, said bottom portion without being substantially affected by the residual strain due to orientation by fluidization.

Abstract: A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

Abstract: A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

Abstract: A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

Abstract: A packaging material having an oxygen-absorbing layer of a thermoplastic resin which is blended with an organic oxidizing component and with a transition metal catalyst, wherein the thermoplastic resin is not substantially oxidized in the presence of the transition metal catalyst. The thermoplastic resin is not deteriorated by oxidation and, hence, oxygen-barrier property is not deteriorated, making it possible to stably suppress the permeation of oxygen over extended periods of time.

Abstract: The temperature of the specimen holder 6 in the vacuum container 1 is lowered with the thermal control unit 11 to adjust the temperature of the specimen 7 composed of a silicon substrate to a low temperature of 0° C. or lower. Then, trenches are formed in the specimen 7 by plasma etching using an etching gas comprising SF6 as the main constituent and optionally O2 as an additive. Thus, the etching rate and the yield can be increased in the trench formation in the silicon semiconductor substrate.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

Abstract: The temperature of the specimen holder 6 in the vacuum container 1 is lowered with the thermal control unit 11 to adjust the temperature of the specimen 7 composed of a silicon substrate to a low temperature of 0° C. or lower. Then, trenches are formed in the specimen 7 by plasma etching using an etching gas comprising SF6 as the main constituent and optionally O2 as an additive. Thus, the etching rate and the yield can be increased in the trench formation in the silicon semiconductor substrate.

Abstract: A packaging material having an oxygen-absorbing layer of a thermoplastic resin which is blended with an organic oxidizing component and with a transition metal catalyst, wherein the thermoplastic resin is not substantially oxidized in the presence of the transition metal catalyst. The thermoplastic resin is not deteriorated by oxidation and, hence, oxygen-barrier property is not deteriorated, making it possible to stably suppress the permeation of oxygen over extended periods of time.

Abstract: A resin composition obtained by blending a thermoplastic resin that can be melt-extruded at a solubility parameter of not smaller than 9.5 with an organic oxidizing component and with a transition metal catalyst, the organic oxidizing component being a polyene having a functional group on a side chain or at a terminal thereof. The resin composition has excellent moldability and gas shut-off property. A multi-layer container having an oxygen-absorbing layer of this resin composition exhibits excellent gas-barrier property and is capable of favorably preserving the content.

Abstract: A bottle having substantially no strain due to fluidized orientation in the bottom portion thereof which is homogeneously and uniformly drawn, and, as a result, exhibiting improved shock resistance and buckling strength in the bottom portion, featuring excellent resistance against environmental cracking at the center in the bottom portion, without developing crazing or whitening during the preservation, and offering excellent appearance. The bottle is formed by biaxially stretch-blow-molding a thermoplastic resin, and has a mouth portion, a shoulder portion, a barrel portion and a bottom portion, said bottom portion without being substantially affected by the residual strain due to orientation by fluidization.

Abstract: A bottle having substantially no strain due to fluidized orientation in the bottom portion thereof which is homogeneously and uniformly drawn, and, as a result, exhibiting improved shock resistance and buckling strength in the bottom portion, featuring excellent resistance against environmental cracking at the center in the bottom portion, without developing crazing or whitening during the preservation, and offering excellent appearance. The bottle is formed by biaxially stretch-blow-molding a thermoplastic resin, and has a mouth portion, a shoulder portion, a barrel portion and a bottom portion, said bottom portion without being substantially affected by the residual strain due to orientation by fluidization.

Abstract: A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.