Abstract: A spherical boron nitride fine particle suited for use as a highly thermoconductive filler or the like has an average particle diameter of 0.01 to 1.0 ?m, an orientation index of 1 to 15, a boron nitride purity of 98.0% by mass or greater, and an average circularity of 0.80 or greater. A method of producing a spherical boron nitride fine particle includes reacting ammonia with an alkoxide borate at an ammonia/alkoxide borate molar ratio of 1 to 10 in an inert gas stream at 750° C. or higher within 30 seconds, then applying heat treatment to a reaction product in an atmosphere of ammonia gas or a mixed gas of ammonia gas and an inert gas at 1,000 to 1,600° C. for at least 1 hour, and further firing the reaction product in an inert gas atmosphere at 1,800 to 2,200° C. for at least 0.5 hour.

Abstract: A boron nitride fine particle has low major diameter/thickness (aspect) ratio, high purity and high crystallinity, and also has an average particle diameter of 0.05 to 2.0 ?m, a graphitization index of 3 or less, and a total oxygen content of 0.20% by mass or less, with an average value of a major diameter/thickness ratio of scaly particles being 6.0 or less. A method of producing a boron nitride fine particle includes introducing ammonia and an alkoxide borate at an ammonia/alkoxide borate molar ratio of 1 to 5 in a reaction vessel in an inert gas atmosphere for heating at 800 to 1,350° C. within 30 seconds thereby obtaining a boron nitride precursor, and then heating the boron nitride precursor at 1,650 to 2,200° C. for at least 0.5 hour in an inert gas atmosphere.

Abstract: A spherical boron nitride fine particle suited for use as a highly thermoconductive filler or the like has an average particle diameter of 0.01 to 1.0 ?m, an orientation index of 1 to 15, a boron nitride purity of 98.0% by mass or greater, and an average circularity of 0.80 or greater. A method of producing a spherical boron nitride fine particle includes reacting ammonia with an alkoxide borate at an ammonia/alkoxide borate molar ratio of 1 to 10 in an inert gas stream at 750° C. or higher within 30 seconds, then applying heat treatment to a reaction product in an atmosphere of ammonia gas or a mixed gas of ammonia gas and an inert gas at 1,000 to 1,600° C. for at least 1 hour, and further firing the reaction product in an inert gas atmosphere at 1,800 to 2,200° C. for at least 0.5 hour.

Abstract: A blue phosphor having an emission peak wavelength different from that of conventional blue phosphors, a method for producing the same, and a high-intensity luminescent device using the phosphor are provided. The phosphor of the present invention is represented by a general formula MeaRebAlcSidOeNf (Me may contain one or more elements selected from Mg, Ca, Sc, Y, and La as second elements, provided that Sr or Ba is contained as an essential first element, and Re may contain one or more elements selected from Mn, Ce, Tb, Yb, and Sm as second elements, provided that Eu is contained as an essential first element), where the composition ratio represented by a, b, c, d, e, and f has the following relations: a+b=1, 0.005<b<0.25, 1.60<c<2.60, 2.50<d<4.05, 3.05<e<5.00, and 2.75<f<4.40.

Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C./min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.

Abstract: Provided are a method for treating the surface of a (Sr,Ca)AlSiN3 nitride phosphor that can improve the moisture-resistance reliability thereof without deterioration in optical properties, a phosphor, a light-emitting device, and an illumination device. The surface of a phosphor is treated in an immersion step of immersing a phosphor of which the host crystal has a crystal structure substantially identical with that of (Sr,Ca)AlSiN3 crystal in an aqueous ammonium phosphate-containing solution (Step 1) and a heat-treating step of leaving the phosphor after the immersion step in an environment at a temperature of 250 to 550° C. for 2 to 24 hours (Step 2).

Abstract: A blue phosphor having an emission peak wavelength different from that of conventional blue phosphors, a method for producing the same, and a high-intensity luminescent device using the phosphor are provided. The phosphor of the present invention is represented by a general formula MeaRebAlcSidOeNf (Me may contain one or more elements selected from Mg, Ca, Sc, Y, and La as second elements, provided that Sr or Ba is contained as an essential first element, and Re may contain one or more elements selected from Mn, Ce, Tb, Yb, and Sm as second elements, provided that Eu is contained as an essential first element), where the composition ratio represented by a, b, c, d, e, and f has the following relations: a+b=1, 0.005<b<0.25, 1.60<c<2.60, 2.50<d<4.05, 3.05<e<5.00, and 2.75<f<4.40.

Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C/min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.

Abstract: A method of manufacturing ?-SiAlON represented by a general formula Si6-zAlzOzN8-z:Eu, including a baking step for baking a powdered material that contains Al content from 0.3 to 1.2 mass %, O content from 0.15 to 1 mass %, O/Al molar ratio from 0.9 to 1.3, Si content from 58 to 60 mass %, N content from 37 to 40 mass %, N/Si molar ratio from 1.25 to 1.45, and Eu content from 0.3 to 0.7 mass %. The baking step is a step of baking the powdered material in a nitrogen atmosphere at temperatures from 1850° C. to 2050° C., and the manufactured ?-SiAlON satisfies 0.280?x?0.340 and 0.630?y?0.675 on the CIExy chromaticity coordinate.

Abstract: A first via land of a wiring layer on a first surface of a first insulation layer that is a rigid layer and a second via land of a wiring layer on a second surface of a second insulation layer that is a flexible layer are electrically and mechanically connected with a conductive pillar pierced through a third insulation layer disposed between the first insulation layer and the second insulation layer. In such a structure, a wiring board that can mount a highly integrated semiconductor device, that is small and thin, and that has high reliability can be accomplished.

Abstract: A first via land of a wiring layer on a first surface of a first insulation layer that is a rigid layer and a second via land of a wiring layer on a second surface of a second insulation layer that is a flexible layer are electrically and mechanically connected with a conductive pillar pierced through a third insulation layer disposed between the first insulation layer and the second insulation layer. In such a structure, a wiring board that can mount a highly integrated semiconductor device, that is small and thin, and that has high reliability can be accomplished.