Abstract: A semiconductor device including: a substrate; a first active layer on the substrate and including a first channel between a source and a drain; a second active layer stacked on the first active layer, the second active layer including a second channel between the source and the drain; a first gate corresponding to the first channel; and a second gate electrically separated from the first gate and corresponding to the second channel.

Abstract: A method for making a self-aligned vertical nanosheet field effect transistor. A vertical trench is etched in a layered structure including a plurality of layers, using reactive ion etching, and filled, using an epitaxial process, with a vertical semiconductor nanosheet. A sacrificial layer from among the plurality of layers is etched out and replaced with a conductive (e.g., metal) gate layer coated with a high-dielectric-constant dielectric material. Two other layers from among the plurality of layers, one above and one below the gate layer, are doped, and act as dopant donors for a diffusion process that forms two PN junctions in the vertical semiconductor nanosheet.

Abstract: A field effect transistor (FET) structure includes: a gate; a first spacer having a first dielectric constant at a first region adjacent to the gate; and a second spacer having a second dielectric constant that is greater than the first dielectric constant at a second region adjacent to the gate.

Abstract: A Gate-All-Around (GAA) Field Effect Transistor (FET) can include a horizontal nanosheet conductive channel structure having a width in a horizontal direction in the GAA FET, a height that is perpendicular to the horizontal direction, and a length that extends in the horizontal direction, where the width of the horizontal nanosheet conductive channel structure defines a physical channel width of the GAA FET. First and second source/drain regions can be located at opposing ends of the horizontal nanosheet conductive channel structure and a unitary gate material completely surrounding the horizontal nanosheet conductive channel structure.

Abstract: A bidirectional memory cell includes a write unit and a read unit. The write unit and the read unit each include an MTJ structure having a first and second pinned layers and a free layer. The first and second pinned layers are separated from the free layer by at least one tunnel barrier. The first pinned layer is electrically coupled to a first write line through a first diode. The second pinned layer is electrically connected to a second word line through a second diode. The free layer is electrically coupled to a first bit line. Additionally, the free layer of the read unit is magnetically coupled to the free layer of the write unit.

Abstract: Methods of forming a semiconductor device are provided. A method of forming a semiconductor device includes forming a metal layer on source/drain regions of respective semiconductor structures, after replacing a dummy gate structure of the semiconductor device with a metal gate structure. The method includes forming a contact structure that overlaps the metal layer on one or more, but not all, of the semiconductor structures. Moreover, an insulating material is between the source/drain regions.

Abstract: A semiconductor device includes: a substrate; a power rail on the substrate; an active layer on the substrate and at same layer as the power rail; and a contact electrically connecting the power rail to the active layer. The active layer includes source/drain terminals.

Abstract: Exemplary embodiments provide for fabricating a biaxially strained nanosheet.

Abstract: A semiconductor device includes a first device isolation pattern defining a first active region, a second device isolation pattern defining a second active region, a first gate disposed on the first active region, the first gate including a gate insulating pattern of a first thickness and a second gate disposed on the second active region, the second gate including a gate insulating pattern of a second thickness greater than the first thickness. A top surface of the first device isolation pattern is curved down toward the first active region such that the first active region has an upper portion protruded from the top surface and rounded corners.

Abstract: A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

Abstract: The present invention relates to a container security apparatus which is easily attachable/detachable to/from both opening/closing bars of a container to sense whether the container is opened/closed and transmit the sensed information on whether the container is opened/closed to a remote location, to thereby check whether the container is sealed or not on a real time basis and thus safely transport the container, and to thereby check the current position of the container in transit and check whether or not the container has deviated from a predetermined path on a real time basis.

Abstract: A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

Abstract: Provided is functional footwear that restrains bad smell and the propagation of germs due to long-time usage of the footwear while maintaining a correct posture of a wearer by cushioning impact applied to feet and distributing pressure. The functional footwear includes a first groove formed in a length direction at a predetermined portion of a midsole, a second groove formed in a width direction of the midsole to be connected with the first groove, a recess formed inside the second groove and perfume emitting materials or antibacterial materials inserted into the recess.

Abstract: A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

Abstract: Provided are a container security device, a container security system, and a security management method which efficiently check opening/closing of a container door and an opening/closing record of the container door and process seal information, cargo state information, base passing information, and location tracking information in real-time from a gate-out process from a shipper (POA) to a gate-in process to a consignee (POD). The container security system includes the container security device which includes a first communication means for providing container seal information through multi-channel communication; and a second communication means for providing information about container transportation and storage in real-time.

Abstract: An actuator includes a focusing-substrate having a focusing coil pattern for generating focusing driving force, the focusing-substrate being provided with a land part and a hole through which laser beams pass, tracking coils for generating tracking driving force, the tracking coils being wound around opposite sides of the focusing substrate in parallel with the a wire direction, magnets for providing magnetic force to the focusing coil pattern and the tracking coils, and a yoke plate provided with a pair of first yokes for fixing the magnets.

Abstract: An actuator for a mobile terminal using suspension wires is disclosed. By using an actuator for a mobile terminal comprising a holder, magnets mounted inside the holder, a coil mounted inside the holder and positioned on the inside of the magnets, a bobbin joined with the coil and having a lens in its center, and suspension wires, the ends of which are joined to the holder, bent at a particular angle to elastically press the bobbin, the manufacturing process may be simplified and the manufacturing cost may be reduced.

Abstract: Disclosed herein are a yoke plate for optical pick-up actuators, a combination structure of a suspension PCB and a yoke plate, and an optical pick-up actuator comprising the structure. The yoke plate comprises a rear yoke at the distal end of one side of the yoke plate, and the rear yoke has damping-gel fillers for attenuating a partial resonance of the suspension wires. The yoke plate is simplified in construction by supporting the suspension PCB using the rear yoke instead of a conventional wire holder, so that assembly process can be simplified and the manufacturing costs can be reduced. The suspension PCB is combined with the yoke plate by bonding or soldering instead of screw fastening, so that the suspension PCB can be combined with the yoke plate without displacement or distortion. The optical pick-up actuator with the combination structure can be provided by a simplified assembly process and reduced manufacturing costs.

Abstract: An actuator includes a focusing-substrate having a focusing coil pattern for generating focusing driving force, the focusing-substrate being provided with a land part and a hole through which laser beams pass, tracking coils for generating tracking driving force, the tracking coils being wound around opposite sides of the focusing substrate in parallel with the a wire direction, magnets for providing magnetic force to the focusing coil pattern and the tracking coils, and a yoke plate provided with a pair of first yokes for fixing the magnets.