Abstract: Methods for depositing metal films using a metal halide precursor and diethyl zinc are described. The substrate is exposed to a first metal precursor and diethyl zinc to form the metal film. The exposures can be sequential or simultaneous. The metal films are pure with a low carbon content. The first metal precursor may be a metal halide selected from the group consisting of tantalum chloride, aluminum chloride, niobium chloride, titanium chloride, zirconium chloride, hafnium chloride, tungsten chloride, molybdenum chloride, tantalum bromide, aluminum bromide, niobium bromide titanium bromide, zirconium bromide, hafnium bromide, tungsten bromide, molybdenum bromide, tantalum fluoride, aluminum fluoride, niobium fluoride, titanium fluoride, zirconium fluoride, hafnium fluoride, tungsten fluoride, molybdenum fluoride, tantalum iodide, aluminum iodide, niobium iodide, titanium iodide, zirconium iodide, hafnium iodide, tungsten iodide, and molybdenum iodide.

Abstract: Embodiments of the present disclosure generally relate to optical devices, and more specifically, protective coatings for optical devices and methods for preparing protective coatings on optical devices and other devices. In one or more embodiments, a method for protecting a photoresist on a workpiece is provided and includes depositing a photoresist layer on a first surface of a substrate, and depositing a protective coating on the photoresist layer disposed on the first surface, wherein the protective coating contains a water-soluble polymeric material. Thereafter, the method includes exposing a second surface of the substrate to one or more fabrication processes, where the first surface is covered by the photoresist layer and the protective coating, and the second surface is uncovered. Thereafter, the method further includes removing the protective coating by at least partially dissolving the water-soluble polymeric material with a removal solution containing water or an aqueous solution.

Abstract: Semiconductor packages and methods for metallization of non-conducting surfaces for fabricating semiconductor packages are provided. In an embodiment, the method includes depositing an adhesion layer on a polymeric surface by an electroless deposition process. The polymeric surface defines a sidewall of a through-hole via and the adhesion layer comprises a cobalt alloy or a nickel alloy. The method further includes depositing a copper seed layer on the adhesion layer by an immersion plating process. The copper seed layer displaces a portion of the adhesion layer. The method further includes filling the through-hole via with a copper containing layer.

Abstract: Systems and techniques that facilitate detecting fuel in oil, lube degradation, and foreign object contamination through optical and/or color characterization are provided. A signature component can generate a digital signature corresponding to a lubricant in a lubrication circuit of an engine. The digital signature can be based on optical or visual properties of a sensor array coupled to the lubrication circuit and exposed to the lubricant, wherein the optical or visual properties of the sensor array can depend on a health of the lubricant. An analysis component can characterize the health of the lubricant by comparing, via a machine learning algorithm, the digital signature with a baseline digital signature corresponding to a desired health-level of the lubricant. In some embodiments, a light emitter component can emit a first light onto the sensor array, and a light receiver component can receive a second light emitted by the sensor array in response to the first light.

Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a blocking layer of molecules is used to achieve selective epitaxial deposition. In one implementation, a method of processing a mixed-surface substrate comprising an exposed dielectric material and an exposed silicon-based material is provided. The method comprises depositing a blocking layer on the exposed dielectric material and epitaxially and selectively depositing a silicon-containing material layer on the exposed silicon-based material at a temperature of 400 degrees Celsius or greater. The method further involves removing the blocking layer from the dielectric material.

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate and on one or more components of the semiconductor processing chamber. The methods may include providing a fluorine-containing precursor to the processing region. The fluorine-containing precursor may be plasma-free when provided to the processing region. The methods may include contacting the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor. The methods may include removing at least a portion of the silicon-containing material on the one or more components of the semiconductor processing chamber with the fluorine-containing precursor.

Abstract: A method of forming a high aspect ratio structure within a 3D NAND structure is provided. The method includes delivering a precursor to a high aspect ratio opening disposed within a multilayer stack having two or more alternating layers. The precursor is selected from the group consisting of a diaminosilane, an aminosilane, and a combination thereof. The method includes delivering an oxygen-containing compound to the high aspect ratio opening. The precursor and the oxygen-containing compound are alternated cyclically to fill the high aspect ratio opening.

Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include a first metal. The methods may include contacting the substrate with the first precursor. The contacting may form a first portion of a metal oxide material on the substrate. The methods may include providing a second precursor to the semiconductor processing chamber. The second precursor may be an oxygen-containing precursor including an alcohol, an alkoxide, a hydroxide, an acetylacetonate, an acetate, a formate, a nitrate, a sulfate, a phosphate, a phosphide, a carbonate, an oxide, an oxynitride, a perchlorate, an oxyhalide, a peroxide, an oxalate, or a phenolate. The methods may include contacting the first portion of the metal oxide material with the second precursor. The contacting may form a metal oxide material.

Abstract: Embodiments of the disclosure provide a method of forming a dielectric film in trenches of a substrate. The utilization of the ALD process and introduction of an inhibitor material onto features defining the trenches and into the trenches provides for suppression of forming the dielectric film near the top surface of the features in the trenches. The dielectric film is formed via an ALD process. The ALD process includes sequentially exposing the substrate to an inhibitor material, a first precursor, a purge gas, an oxygen-containing precursor, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the dielectric film.

Abstract: Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The first precursor may include one or more of niobium, tantalum, or titanium. The methods may include contacting the substrate with the first precursor. The contacting may form a layer of metal on the substrate. The methods may include providing a second precursor to a semiconductor processing chamber. The second precursor comprises oxygen. The methods may include contacting the layer of metal with the second precursor. The contacting may form a layer of metal oxide on the substrate. The layer of metal oxide may be one or more of niobium oxide, tantalum oxide, or titanium oxide.

Abstract: Methods of making a multilayered semiconductor particle, which may be referred to as a quantum dot, are described. The methods include combining a first zinc-containing compound and a selenium-containing compound to form a ZnSe mixture. The zinc-containing compound and the selenium-containing compound are rapidly combined in less than or about 5 seconds. The methods also include adding a tellurium-containing compound to the ZnSe mixture to form at least one ZnSeTe particle in a ZnSeTe mixture. The methods still further include forming a first shell layer on the ZnSeTe particle and forming a second shell layer on the first shell layer to make the multilayered semiconductor particle. In additional embodiments, the reactant and particle mixtures may be rapidly stirred. The light emitted by the multilayered semiconductor particles may be characterized by an enhanced narrowband emission profile (i.e., sharpness).

Abstract: Systems and techniques that facilitate detecting fuel in oil, lube degradation, and foreign object contamination through optical and/or color characterization are provided. A signature component can generate a digital signature corresponding to a lubricant in a lubrication circuit of an engine. The digital signature can be based on optical or visual properties of a sensor array coupled to the lubrication circuit and exposed to the lubricant, wherein the optical or visual properties of the sensor array can depend on a health of the lubricant. An analysis component can characterize the health of the lubricant by comparing, via a machine learning algorithm, the digital signature with a baseline digital signature corresponding to a desired health-level of the lubricant. In some embodiments, a light emitter component can emit a first light onto the sensor array, and a light receiver component can receive a second light emitted by the sensor array in response to the first light.

Abstract: A silicone bond coat composition having a viscosity of less than 1,600 centistokes is applied to substantially all external surfaces of the article and then cured. A liquid silicone elastomer outer coat composition comprising a high viscosity first liquid silicone elastomer formulation and a low viscosity second liquid silicone elastomer formulation is then applied and cured to provide a protected article having a complex shape. Optimal coatings result from a careful balancing of component viscosities. In an embodiment, the first formulation has a viscosity greater than 300,000 centistokes, and the second formulation has a viscosity less than 6,000 centistokes, and the liquid silicone elastomer outer coat composition comprises from about 60 to about 40 percent by weight of the first formulation and from about 40 to about 60 percent by weight of the second liquid silicone elastomer formulation.

Abstract: A method and an apparatus for detecting photons are disclosed. The apparatus includes a scintillator single crystal and an avalanche photodiode coupled to the scintillator single crystal. The scintillator single crystal is at a temperature greater than about 175° C. and at a shock level in a range from about 20 Grms to about 30 Grms. The scintillator single crystal includes a praseodymium doped composition selected from (LaxY1-x)2Si2O7:Pr, ABCl3-yXy:Pr, A2(Li,Na)LaCl6-yXy:Pr, or any combinations thereof. As used herein A is cesium, rubidium, potassium, sodium, or a combination thereof, B is calcium, barium, strontium, magnesium, cadmium, zinc, or a combination thereof, and X is bromine, iodine, or a combination thereof. Further, (0<x<1), and (0<y<3).

Abstract: A method for repairing a Ni-based alloy component includes preparing a surface of the Ni-based alloy component for receiving a cold spray repair; spraying a stream of particles onto a the surface of the Ni-based alloy component to form a coating thereon; and removing any over-spray on the surface of the Ni-based alloy component. The particles are formed from an alloy material having a melting point such that the particles are sprayed at a spray temperature that is less than the melting point of the alloy material.

Abstract: A method for repairing a Ni-based alloy component is prepared. The method may include preparing a surface of the Ni-based alloy component for receiving a cold spray repair; spraying a stream of particles onto a the surface of the Ni-based alloy component to form a coating thereon; and removing any over-spray on the surface of the Ni-based alloy component. The particles may be formed from an alloy material having a melting point such that the particles are sprayed at a spray temperature that is less than the melting point of the alloy material.

Abstract: An article including a substrate and a plurality of coatings disposed on the substrate is presented. The plurality of coatings includes a thermal barrier coating disposed on the substrate; and a protective coating including a calcium-magnesium-aluminum-silicon-oxide (CMAS)-reactive material disposed on the thermal barrier coating. The CMAS-reactive material includes an NZP-type material. The CMAS-reactive material is present in the plurality of coatings in an effective amount to react with a CMAS composition at an operating temperature of the thermal barrier coating, thereby forming a reaction product having one or both of melting temperature and viscosity greater than that of the CMAS composition. A method of making the article and a related turbine engine component are also presented.

Abstract: Articles having coatings that are resistant to high temperature degradation are described, along with methods for making such articles. The article comprises a coating disposed on a substrate. The coating comprises a plurality of elongated surface-connected voids. The article further includes a protective agent disposed within at least some of the voids of the coating; the protective agent comprises a substance capable of chemically reacting with liquid nominal CMAS to form a solid crystalline product outside the crystallization field of said nominal CMAS. This solid crystalline product has a melting temperature greater than about 1200 degrees Celsius. The method generally includes disposing the protective agent noted above within the surface connected voids of the coating at an effective concentration to substantially prevent incursion of CMAS materials into the voids in which the protective agent is disposed.

Abstract: A silicone bond coat composition having a viscosity of less than 1,600 centistokes is applied to substantially all external surfaces of the article and then cured. A liquid silicone elastomer outer coat composition comprising a high viscosity first liquid silicone elastomer formulation and a low viscosity second liquid silicone elastomer formulation is then applied and cured to provide a protected article having a complex shape. Optimal coatings result from a careful balancing of component viscosities. In an embodiment, the first formulation has a viscosity greater than 300,000 centistokes, and the second formulation has a viscosity less than 6,000 centistokes, and the liquid silicone elastomer outer coat composition comprises from about 60 to about 40 percent by weight of the first formulation and from about 40 to about 60 percent by weight of the second liquid silicone elastomer formulation.

Abstract: A method and an apparatus for detecting photons are disclosed. The apparatus includes a scintillator single crystal and an avalanche photodiode coupled to the scintillator single crystal. The scintillator single crystal is at a temperature greater than about 175° C. and at a shock level in a range from about 20 Grms to about 30 Grms. The scintillator single crystal includes a praseodymium doped composition selected from (LaxY1-x)2Si2O7:Pr, ABCl3-yXy:Pr, A2(Li, Na)LaCl6-yXy:Pr, or any combinations thereof. As used herein A is cesium, rubidium, potassium, sodium, or a combination thereof, B is calcium, barium, strontium, magnesium, cadmium, zinc, or a combination thereof, and X is bromine, iodine, or a combination thereof. Further, (0<x<1), and (0<y<3).