Abstract: The present invention encompasses a bus hold and weak pull-up circuit. A resistor having a first node and a second node is coupled to a bi-directional I/O pin at the first node. The weak pull-up circuit is directly coupled to the resistor at the first node. The bus hold circuit is coupled to the resistor at the second node.

Abstract: Methods and apparatus for a dual-port SRAM in a programmable logic device. One embodiment provides a programmable logic integrated circuit including a dual-port memory. The memory includes a plurality of memory storage cells, and each memory storage cell has a memory cell having a first node and a second node, a first series of devices connected between a first data line and the first node of the memory cell, and a second series of devices connected between a second data line and the second node of the memory cell. A read cell is connected to the second node of the memory cell. A word line is connected to a first device in the first series of devices, a second device in the second series of devices, and the read cell.

Abstract: A programmable logic device is equipped for various differential signaling schemes by providing a differential output buffer on the device that can be configured according to the needs of the particular differential signaling schemes that may be used. The buffer includes a differential output driver, an adjustable current limiting circuit between the supply voltage and the differential output driver, and an adjustable current limiting circuit between the differential output driver and ground. By selectively adjusting the two current limiting circuits, the output impedance and current, as well as the common mode output voltage and the differential output voltage can be controlled.