Abstract: Bump electrodes are formed on a semiconductor pellet by tearing off conductive wires so as to expose fresh metal, and pad electrodes on a circuit board are cleared by exposing them to an ionic beam or an atomic beam; when the bump electrodes are bonded to the pad electrodes, bump electrodes are heated to a certain temperature lower than the melting point of the metal, and are pressed against the pad electrodes, thereby preventing the bump electrodes from undesirable short-circuit.

Abstract: A semiconductor device comprising a wiring substrate which has a laminated glass fabric body made by laminating a plurality of glass fabrics and impregnating with resin. A resin layer is provided on at least one of surfaces of the laminated glass fabric body. A plurality of pad electrodes are formed on the resin layer. The resin layer has a thickness from 1.5 to 2.5 times the depth of unevenness of the surface of the laminated glass fabric body on which the resin layer exists. A semiconductor pellet is disposed on the wiring substrate and has a plurality of projected electrodes. The projected electrodes are electrically coupled to the pad electrodes by pressing the projected electrodes to the pad electrodes while heating the wiring substrate and/or the semiconductor pellet. Tip portions of the projected electrodes together with the pad electrodes plunge into the resin layer.

Abstract: There is provided a semiconductor device including a semiconductor pellet having a plurality of bump electrodes on a surface thereof, a wiring board having a plurality of pad electrodes on a surface thereof, each one of the pad electrodes being engaged to an associated one of the bump electrodes when the wiring board is coupled to the semiconductor pellet, and a resin layer sandwiched between the semiconductor pellet and the wiring board for connecting them with each other therethrough, each of the bump electrodes being formed with one of a projection and a recess into which the projection is able to be fit, and each of the pad electrodes being formed with the other. For instance, the bump electrodes are formed by compressing a molten ball formed at a tip end of a gold wire onto the semiconductor pellet, and the projection is formed on the bump electrodes by cutting the gold wire so that a tip end portion of the gold wire leaves on the bump electrodes.

Abstract: A flip-chip type semiconductor device comprises a semiconductor pellet having bump electrodes formed on one main surface thereof, a wiring board having pad electrodes formed corresponding to the bump electrodes, the wiring board being disposed opposite to the semiconductor pellet, the bump electrodes contacting the pad electrodes, and a resin for causing the semiconductor pellet and the wiring board to adhere to each other, wherein a convex portion of each of the pad electrodes is press-fitted to each of the pad electrodes. Thus, the connecting strength between a bump electrode and a pad electrode is remarkably improved. Even if the resin between the semiconductor pellet and the wiring board cracks, the press-fitting state between the bump electrode and the pad electrode can be sufficiently kept.