Patents by Inventor Gouji Wakamatsu

Gouji Wakamatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200124961
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
  • Patent number: 10620534
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: April 14, 2020
    Assignee: JSR CORPORATION
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Publication number: 20190278175
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: August 17, 2018
    Publication date: September 12, 2019
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
  • Publication number: 20190094695
    Abstract: The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.
    Type: Application
    Filed: November 30, 2018
    Publication date: March 28, 2019
    Applicant: JSR CORPORATION
    Inventors: Naoya NOSAKA, Gouji WAKAMATSU, Tsubasa ABE, Yuushi MATSUMURA, Masayuki MIYAKE, Yoshio TAKIMOTO
  • Publication number: 20190025695
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: August 17, 2018
    Publication date: January 24, 2019
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
  • Patent number: 10146131
    Abstract: A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to X1 or X2; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: December 4, 2018
    Assignee: JSR CORPORATION
    Inventors: Shin-ya Nakafuji, Fumihiro Toyokawa, Gouji Wakamatsu, Yoshio Takimoto, Katsuhisa Mizoguchi, Takashi Okada, Takaaki Uno, Takeshi Endo, Masaki Moritsugu
  • Patent number: 10082733
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: September 25, 2018
    Assignee: JSR CORPORATION
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Publication number: 20170199453
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: October 21, 2016
    Publication date: July 13, 2017
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Patent number: 9696626
    Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.
    Type: Grant
    Filed: May 19, 2016
    Date of Patent: July 4, 2017
    Assignee: JSR CORPORATION
    Inventors: Fumihiro Toyokawa, Shin-ya Nakafuji, Gouji Wakamatsu
  • Patent number: 9500950
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: November 22, 2016
    Assignee: JSR CORPORATION
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Publication number: 20160259247
    Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.
    Type: Application
    Filed: May 19, 2016
    Publication date: September 8, 2016
    Applicant: JSR CORPORATION
    Inventors: Fumihiro TOYOKAWA, Shin-ya NAKAFUJI, Gouji WAKAMATSU
  • Patent number: 9400429
    Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: July 26, 2016
    Assignee: JSR CORPORATION
    Inventors: Fumihiro Toyokawa, Shin-ya Nakafuji, Gouji Wakamatsu
  • Publication number: 20160062237
    Abstract: An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
    Type: Application
    Filed: November 5, 2015
    Publication date: March 3, 2016
    Applicant: JSR CORPORATION
    Inventors: Hiroki NAKAGAWA, Hiromitsu NAKASHIMA, Gouji WAKAMATSU, Kentarou GOTOU, Yukio NISHIMURA, Takeo SHIOYA
  • Publication number: 20160011512
    Abstract: A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), X1 and X2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to X1 or X2; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3.
    Type: Application
    Filed: September 23, 2015
    Publication date: January 14, 2016
    Applicant: JSR CORPORATION
    Inventors: Shin-ya NAKAFUJI, Fumihiro TOYOKAWA, Gouji WAKAMATSU, Yoshio TAKIMOTO, Katsuhisa MIZOGUCHI, Takashi OKADA, Takaaki UNO, Takeshi ENDO, Masaki MORITSUGU
  • Patent number: 9213236
    Abstract: A fluorine-containing polymer for use in a radiation-sensitive resin composition is used for forming a photoresist film in a process of forming a resist pattern, including a liquid immersion lithographic process in which radiation is emitted through a liquid having a refractive index larger than the refractive index of air at a wavelength of 193 nm, and being present between a lens and the photoresist film. The fluorine-containing polymer has a weight average molecular weight determined by gel permeation chromatography in the range from 1,000 to 50,000 and a receding contact angle with water and the photoresist film formed therefrom is 70° or more.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: December 15, 2015
    Assignee: JSR CORPORATION
    Inventors: Hiroki Nakagawa, Hiromitsu Nakashima, Gouji Wakamatsu, Kentarou Gotou, Yukio Nishimura, Takeo Shioya
  • Publication number: 20150185613
    Abstract: A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.
    Type: Application
    Filed: March 10, 2015
    Publication date: July 2, 2015
    Applicant: JSR CORPORATION
    Inventors: Fumihiro TOYOKAWA, Shin-ya Nakafuji, Gouji Wakamatsu
  • Patent number: 9029067
    Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: May 12, 2015
    Assignee: JSR Corporation
    Inventors: Gouji Wakamatsu, Masafumi Hori, Kouichi Fujiwara, Makoto Sugiura
  • Publication number: 20150004547
    Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
    Type: Application
    Filed: September 16, 2014
    Publication date: January 1, 2015
    Applicant: JSR Corporation
    Inventors: Gouji WAKAMATSU, Masafumi HORI, Kouichi FUJIWARA, Makoto SUGIURA
  • Patent number: 8877429
    Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
    Type: Grant
    Filed: January 12, 2011
    Date of Patent: November 4, 2014
    Assignee: JSR Corporation
    Inventors: Gouji Wakamatsu, Masafumi Hori, Kouichi Fujiwara, Makoto Sugiura
  • Patent number: 8808974
    Abstract: A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: August 19, 2014
    Assignee: JSR Corporation
    Inventors: Yukio Nishimura, Kaori Sakai, Nobuji Matsumura, Makoto Sugiura, Atsushi Nakamura, Gouji Wakamatsu, Yuusuke Anno