Patents by Inventor Goutam Chattopadhyay
Goutam Chattopadhyay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160149562Abstract: A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).Type: ApplicationFiled: November 25, 2015Publication date: May 26, 2016Inventors: Jose Vicente Siles Perez, Choonsup Lee, Goutam Chattopadhyay, Ken B. Cooper, Imran Mehdi, Robert H. Lin, Alejandro Peralta
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Publication number: 20150288048Abstract: A data link, comprising a substrate; and an ink structure printed and/or marked on a substrate, wherein the structure directs an electric, magnetic, and/or electromagnetic wave between two locations.Type: ApplicationFiled: April 3, 2015Publication date: October 8, 2015Inventors: Adrian J. Tang, Goutam Chattopadhyay, Choonsup Lee, Emmanuel Decrossas, Nacer E. Chahat
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Publication number: 20150280321Abstract: A system for wirelessly communicating between a base station and a mobile device, including a reflector integrated with a mobile device, wherein the reflector reflects carrier radiation transmitted from a base station, to form a reflection of the carrier radiation, and input data from the mobile device modulates a reflection coefficient of the reflector, thereby modulating the reflection such that the reflection of the carrier radiation carries the input data to the base station.Type: ApplicationFiled: March 31, 2015Publication date: October 1, 2015Inventors: Adrian J. Tang, Nacer E. Chahat, Goutam Chattopadhyay, Choonsup Lee
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Patent number: 9143084Abstract: A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.Type: GrantFiled: August 27, 2012Date of Patent: September 22, 2015Assignee: California Institute of TechnologyInventors: Jose Vicente Siles Perez, Goutam Chattopadhyay, Choonsup Lee, Erich T. Schlecht, Cecile D. Jung-Kubiak, Imran Mehdi
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Publication number: 20150236396Abstract: A system, method, device, and apparatus provide a dielectric waveguide splitter/bi-directional link. A dielectric substrate fabricated into a first Y-junction waveguide with a first port splitting into a first branch leading to a second port and a second branch leading to a third port. An angle between the first branch and the second branch is below ninety degrees (90°). The dielectric waveguide splitter enables millimeter-wave (mmWave) transmission between the first port and the second port while reducing feedback of the mmWave between the second and third port. Two Y-junction waveguides may be fabricated back-to-back to provide simultaneous bidirectional mmWave transmission at a single frequency.Type: ApplicationFiled: February 19, 2015Publication date: August 20, 2015Applicant: California Institute of TechnologyInventors: Adrian Joseph Tang, Goutam Chattopadhyay, Nacer E. Chahat, Emmanuel Decrossas
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Publication number: 20140340178Abstract: A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.Type: ApplicationFiled: April 15, 2014Publication date: November 20, 2014Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Cecile Jung-Kubiak, Theodore Reck, Goutam Chattopadhyay, Jose Vicente Siles Perez, Robert H. Lin, Imran Mehdi, Choonsup Lee, Ken B. Cooper, Alejandro Peralta
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Patent number: 8780012Abstract: An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.Type: GrantFiled: June 30, 2010Date of Patent: July 15, 2014Assignee: California Institute of TechnologyInventors: Nuria Llombart Juan, Choonsup Lee, Goutam Chattopadhyay, John J. Gill, Anders J. Skalare, Peter H. Siegel
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Publication number: 20140144009Abstract: A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel.Type: ApplicationFiled: April 24, 2013Publication date: May 29, 2014Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Goutam CHATTOPADHYAY, Imran Mehdi, Choonsup Lee, John J. Gill, Cecile Jung-Kubiak, Nuria Llombart
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Publication number: 20140147192Abstract: A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.Type: ApplicationFiled: April 26, 2013Publication date: May 29, 2014Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Cecile Jung-Kubiak, Theodore Reck, Bertrand Thomas, Robert H. Lin, Alejandro Peralta, John J. Gill, Choonsup Lee, Jose V. Siles, Risaku Toda, Goutam Chattopadhyay, Ken B. Cooper, Imran Mehdi
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Patent number: 8693973Abstract: A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.Type: GrantFiled: May 2, 2012Date of Patent: April 8, 2014Assignee: California Institute of TechnologyInventors: Goutam Chattopadhyay, Erich T. Schlecht, Choonsup Lee, Robert H. Lin, John J. Gill, Seth Sin, Imran Mehdi
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Publication number: 20130229210Abstract: A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.Type: ApplicationFiled: August 27, 2012Publication date: September 5, 2013Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Jose V. Siles, Goutam Chattopadhyay, Choonsup Lee, Erich T. Schlecht, Cecile Jung, Imran Mehdi
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Publication number: 20120280742Abstract: A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.Type: ApplicationFiled: May 2, 2012Publication date: November 8, 2012Applicant: California Institute of TechnologyInventors: Goutam Chattopadhyay, Erich T. Schlecht, Choonsup Lee, Robert H. Lin, John J. Gill, Seth Sin, Imran Mehdi
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Patent number: 8193995Abstract: In one embodiment, a slot array antenna comprising a quartz layer and a silicon layer, wherein the quartz and silicon layers are matched to suppress microwave modes, and a metal layer adjacent to the silicon layer comprising offset cuts.Type: GrantFiled: May 19, 2009Date of Patent: June 5, 2012Assignee: California Institute of TechnologyInventors: Mohammad M. Mojarradi, Goutam Chattopadhyay, Harish Manohara, Hadi Mojaradi
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Patent number: 8144052Abstract: A three-dimensional imaging radar operating at high frequency e.g., 670 GHz radar using low phase-noise synthesizers and a fast chirper to generate a frequency-modulated continuous-wave (FMCW) waveform, is disclosed that operates with a multiplexed beam to obtain range information simultaneously on multiple pixels of a target. A source transmit beam may be divided by a hybrid coupler into multiple transmit beams multiplexed together and directed to be reflected off a target and return as a single receive beam which is demultiplexed and processed to reveal range information of separate pixels of the target associated with each transmit beam simultaneously. The multiple transmit beams may be developed with appropriate optics to be temporally and spatially differentiated before being directed to the target. Temporal differentiation corresponds to a different intermediate frequencies separating the range information of the multiple pixels.Type: GrantFiled: October 15, 2009Date of Patent: March 27, 2012Assignee: California Institute of TechnologyInventors: Ken B. Cooper, Robert J. Dengler, Peter H. Siegel, Goutam Chattopadhyay, John S. Ward, Nuria Llombart Juan, Tomas E. Bryllert, Imran Mehdi, Jan A. Tarsala
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Publication number: 20120013517Abstract: Methods and apparatus for integrating lens antennas for receivers are disclosed. A method of fabricating a lens in accordance with one or more embodiments of the present invention comprises integrating lens material with a dielectric material and flowing the lens material into a desired lens shape. An integrated lens antenna in accordance with one or more embodiments of the present invention comprises a dielectric material, a waveguide feed, coupled to the dielectric material through a leaky wave cavity, and a lens, coupled to the dielectric material opposite the leaky wave cavity, wherein material is first deposited onto the dielectric material, flowed into a desired lens shape and the desired lens shape is transferred to the dielectric material.Type: ApplicationFiled: June 14, 2011Publication date: January 19, 2012Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Choonsup Lee, Goutam Chattopadhyay, Nuria Llombart
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Patent number: 7899432Abstract: In an embodiment, a submillimeter wave heterodyne receiver includes a finline ortho-mode transducer comprising thin tapered metallic fins deposited on a thin dielectric substrate to separate a vertically polarized electromagnetic mode from a horizontally polarized electromagnetic mode. Other embodiments are described and claimed.Type: GrantFiled: February 15, 2008Date of Patent: March 1, 2011Assignee: California Institute of TechnologyInventors: Goutam Chattopadhyay, Harish Manohara, Peter H. Siegel, John Ward
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Publication number: 20100328779Abstract: An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.Type: ApplicationFiled: June 30, 2010Publication date: December 30, 2010Applicant: California Institute of TechnolologyInventors: Nuria Llombart Juan, Choonsup Lee, Goutam Chattopadhyay, John J. Gill, Anders Skalare, Peter H. Siegel
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Patent number: 7773205Abstract: A three-dimensional imaging radar operating at high frequency e.g., 670 GHz, is disclosed. The active target illumination inherent in radar solves the problem of low signal power and narrow-band detection by using submillimeter heterodyne mixer receivers. A submillimeter imaging radar may use low phase-noise synthesizers and a fast chirper to generate a frequency-modulated continuous-wave (FMCW) waveform. Three-dimensional images are generated through range information derived for each pixel scanned over a target. A peak finding algorithm may be used in processing for each pixel to differentiate material layers of the target. Improved focusing is achieved through a compensation signal sampled from a point source calibration target and applied to received signals from active targets prior to FFT-based range compression to extract and display high-resolution target images. Such an imaging radar has particular application in detecting concealed weapons or contraband.Type: GrantFiled: June 6, 2008Date of Patent: August 10, 2010Assignee: California Institute of TechnologyInventors: Ken B. Cooper, Goutam Chattopadhyay, Peter H. Siegel, Robert J. Dengler, Erich T. Schlecht, Imran Mehdi, Anders J. Skalare
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Publication number: 20100090887Abstract: A three-dimensional imaging radar operating at high frequency e.g., 670 GHz radar using low phase-noise synthesizers and a fast chirper to generate a frequency-modulated continuous-wave (FMCW) waveform, is disclosed that operates with a multiplexed beam to obtain range information simultaneously on multiple pixels of a target. A source transmit beam may be divided by a hybrid coupler into multiple transmit beams multiplexed together and directed to be reflected off a target and return as a single receive beam which is demultiplexed and processed to reveal range information of separate pixels of the target associated with each transmit beam simultaneously. The multiple transmit beams may be developed with appropriate optics to be temporally and spatially differentiated before being directed to the target. Temporal differentiation corresponds to a different intermediate frequencies separating the range information of the multiple pixels.Type: ApplicationFiled: October 15, 2009Publication date: April 15, 2010Applicant: California Institute of TechnologyInventors: Ken B. Cooper, Robert J. Dengler, Peter H. Siegel, Goutam Chattopadhyay, John S. Ward, Nuria Llombart Juan, Tomas E. Bryllert, Imran Mehdi, Jan A. Tarsala
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Publication number: 20100039342Abstract: In one embodiment, a slot array antenna comprising a quartz layer and a silicon layer, wherein the quartz and silicon layers are matched to suppress microwave modes, and a metal layer adjacent to the silicon layer comprising offset cuts.Type: ApplicationFiled: May 19, 2009Publication date: February 18, 2010Applicant: California Institute of TechnologyInventors: Mohammad M. Mojarradi, Goutam Chattopadhyay, Harish Manohara, Hadi Mojaradi