Abstract: A pressure sensor die assembly for a differential pressure sensor comprises a base substrate including a first overpressure stop structure on a first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section that includes a first cavity and a second cavity surrounding the first cavity, and a second side opposite from the first side. A pressure sensing diaphragm portion is defined by the first cavity and is located over the first overpressure stop structure. An overpressure diaphragm portion is defined by the second cavity. A top cap coupled to the second side of the diaphragm structure includes a second overpressure stop structure. The overpressure stop structures are each sized to support substantially all of a strained area of the pressure sensing diaphragm portion at an increasing overpressure on the first or second sides of the diaphragm structure.

Abstract: In one embodiment a pressure sensor is provided. The pressure sensor includes a housing having an input port configured to allow a media to enter the housing. A support is mounted within the housing, the support defining a first aperture extending therethrough. A stress isolation member is mounted within the first aperture of the support, the stress isolation member defining a second aperture extending therethrough, wherein the stress isolation member is composed of silicon. sensor die bonded to the stress isolation member. The sensor die includes a silicon substrate having an insulator layer on a first side of the silicon substrate; and sensing circuitry disposed in the insulator layer on the first side, wherein a second side of the silicon substrate is exposed to the second aperture of the stress isolation member and the second side is reverse of the first side.

Abstract: A pressure sensor die assembly comprises a base substrate having a first surface, a stop structure on the first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section including a first cavity and a second cavity surrounding the first cavity; a pressure sensing diaphragm portion having a first thickness and defined by the first cavity; and an over pressure diaphragm portion having a second thickness and defined by the second cavity, the second thickness greater than the first thickness. When an over pressure is applied, at least some area of the pressure sensing diaphragm portion is deflected and supported by the stop structure. As over pressure is increased, the over pressure diaphragm portion deflects and engages with the first surface such that additional area of the pressure sensing diaphragm portion is deflected and supported by the stop structure.

Abstract: A silicon-on-sapphire chip with minimal thermal strain preload is provided. The chip includes a sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface; and a silicon layer overlaying the first-sapphire surface. The silicon layer is formed by: creating a plurality of buried cavities in a plane within tens of microns from a first-silicon surface of a silicon wafer; laser fusing the first-silicon surface to the first-sapphire surface at room temperature to attach the silicon wafer to a sapphire wafer; and cleaving the silicon wafer along the plane including the plurality of buried cavities. A silicon-wafer layer is formed from the silicon material between the first-silicon surface and the plane of the plurality of buried cavities. The silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer. The silicon-on-sapphire chip is formed by dicing the silicon-on-sapphire wafer.

Abstract: A pressure sensor die assembly for a differential pressure sensor comprises a base substrate including a first overpressure stop structure on a first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section that includes a first cavity and a second cavity surrounding the first cavity, and a second side opposite from the first side. A pressure sensing diaphragm portion is defined by the first cavity and is located over the first overpressure stop structure. An overpressure diaphragm portion is defined by the second cavity. A top cap coupled to the second side of the diaphragm structure includes a second overpressure stop structure. The overpressure stop structures are each sized to support substantially all of a strained area of the pressure sensing diaphragm portion at an increasing overpressure on the first or second sides of the diaphragm structure.

Abstract: A pressure sensor die assembly comprises a base substrate having a first surface, a stop structure on the first surface, and a diaphragm structure coupled to the first surface. The diaphragm structure comprises a first side with a cavity section including a first cavity and a second cavity surrounding the first cavity; a pressure sensing diaphragm portion having a first thickness and defined by the first cavity; and an over pressure diaphragm portion having a second thickness and defined by the second cavity, the second thickness greater than the first thickness. When an over pressure is applied, at least some area of the pressure sensing diaphragm portion is deflected and supported by the stop structure. As over pressure is increased, the over pressure diaphragm portion deflects and engages with the first surface such that additional area of the pressure sensing diaphragm portion is deflected and supported by the stop structure.

Abstract: Systems and method for mounting the printed wiring assembly to the header assembly of a pressure sensor are provided. In at least one embodiment, the pressure sensor comprises: a header assembly; a printed wiring assembly having a pressure sensor mounted thereon; and, at least one substantially cylindrical member that mechanically couples the printed wiring assembly to the header assembly. The substantially cylindrical member has a substantially hollow core, a substantially circular first end attached to the header assembly, a substantially circular second end opposite the substantially circular first end, and at least one side extending from the substantially circular first end to the substantially circular second end of the cylindrical member. Furthermore, the substantially circular second end or the at least one side or both are attached to the printed wiring assembly.

Abstract: A silicon-on-sapphire chip with minimal thermal strain preload is provided. The chip includes a sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface; and a silicon layer overlaying the first-sapphire surface. The silicon layer is formed by: creating a plurality of buried cavities in a plane within tens of microns from a first-silicon surface of a silicon wafer; laser fusing the first-silicon surface to the first-sapphire surface at room temperature to attach the silicon wafer to a sapphire wafer; and cleaving the silicon wafer along the plane including the plurality of buried cavities. A silicon-wafer layer is formed from the silicon material between the first-silicon surface and the plane of the plurality of buried cavities. The silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer. The silicon-on-sapphire chip is formed by dicing the silicon-on-sapphire wafer.

Abstract: Systems and method for mounting the printed wiring assembly to the header assembly of a pressure sensor are provided. In at least one embodiment, the pressure sensor comprises: a header assembly; a printed wiring assembly having a pressure sensor mounted thereon; and, at least one substantially cylindrical member that mechanically couples the printed wiring assembly to the header assembly. The substantially cylindrical member has a substantially hollow core, a substantially circular first end attached to the header assembly, a substantially circular second end opposite the substantially circular first end, and at least one side extending from the substantially circular first end to the substantially circular second end of the cylindrical member. Furthermore, the substantially circular second end or the at least one side or both are attached to the printed wiring assembly.

Abstract: An integrated reference vacuum pressure sensor with an atomic layer deposition (ALD) coated input port comprises a housing with an port for a media to enter the housing; a substrate and stress isolation member in the housing; wherein a channel extends through the substrate and the stress isolation member, wherein a trace is embedded within the stress isolation member, wherein stress isolation member and substrate surfaces exposed to the channel are coated with an ALD; a sensor die bonded to the stress isolation member, the sensor die comprising a diaphragm having circuitry, wherein a side of the diaphragm is exposed to the channel and the circuitry is mounted to another side of the diaphragm; a via extending through the sensing die electrically connecting the circuitry to the trace; and a cover bonded to the stress isolation member, the cover having a recess, the sensor die in the recess.

Abstract: An integrated reference vacuum pressure sensor with an atomic layer deposition (ALD) coated input port comprises a housing with an port for a media to enter the housing; a substrate and stress isolation member in the housing; wherein a channel extends through the substrate and the stress isolation member, wherein a trace is embedded within the stress isolation member, wherein stress isolation member and substrate surfaces exposed to the channel are coated with an ALD; a sensor die bonded to the stress isolation member, the sensor die comprising a diaphragm having circuitry, wherein a side of the diaphragm is exposed to the channel and the circuitry is mounted to another side of the diaphragm; a via extending through the sensing die electrically connecting the circuitry to the trace; and a cover bonded to the stress isolation member, the cover having a recess, the sensor die in the recess.

Abstract: A method of making a pressure sensing apparatus is provided herein. A plurality of trenches are etched on a first surface of a substrate. The substrate is annealed to form a diaphragm and an embedded cavity from the plurality of trenches, the diaphragm formed of a portion of the substrate wherein an exterior surface of the diaphragm is the first surface of the substrate and an interior surface of the diaphragm is a surface defining the embedded cavity. Piezoresistors are fabricated on the exterior surface of the diaphragm, the piezoresistors configured to change resistivity in response to strain resulting from deflection of the diaphragm. The substrate is mounted, including the diaphragm, in a housing such that a media can apply pressure to the diaphragm and such that the pressure can be sensed by determining a change in the resistivity of the piezoresistors.

Abstract: In one embodiment a pressure sensor is provided. The pressure sensor includes a housing having an input port configured to allow a media to enter the housing. A support is mounted within the housing, the support defining a first aperture extending therethrough. A stress isolation member is mounted within the first aperture of the support, the stress isolation member defining a second aperture extending therethrough, wherein the stress isolation member is composed of silicon. sensor die bonded to the stress isolation member. The sensor die includes a silicon substrate having an insulator layer on a first side of the silicon substrate; and sensing circuitry disposed in the insulator layer on the first side, wherein a second side of the silicon substrate is exposed to the second aperture of the stress isolation member and the second side is reverse of the first side.

Abstract: Systems and methods for a pressure sensor are provided, where the pressure sensor comprises a housing having a high side input port that allows a high pressure media to enter a high side of the housing and a low side input port that allows a low pressure media to enter a low side of the housing when the housing is placed in an environment containing the high and low pressure media; a substrate mounted within the housing; a stress isolation member mounted to the substrate; a die stack having sensing circuitry bonded to the stress isolation member; a low side atomic layer deposition (ALD) applied to surfaces, of the substrate, the stress isolation member, and the die stack, exposed to the low side input port; and a high side ALD applied to surfaces, of the stress isolation member and the die stack, exposed to the high side input port.

Abstract: Systems and methods are provided for a deep sea pH sensor. In one embodiment, a method for manufacturing a pH sensor comprises forming a sensor electrode in a working surface of a die wherein the sensor electrode is able to sense the pH of a liquid and forming at least one isolation groove around the sensor electrode on the working surface of the die, wherein the die has a wide street around the sensor electrode and the at least one isolation groove. The method further comprises mounting the die onto a base and securing a seal on the working surface in the wide street, wherein the seal surrounds the isolation groove, the seal sealing the liquid within the portion of the working surface of the die containing the sensor electrode and the isolation groove, when the pH sensor is subjected to high pressure.

Abstract: An integrated reference vacuum pressure sensor with an atomic layer deposition (ALD) coated input port comprises a housing with an port for a media to enter the housing; a substrate and stress isolation member in the housing; wherein a channel extends through the substrate and the stress isolation member, wherein a trace is embedded within the stress isolation member, wherein stress isolation member and substrate surfaces exposed to the channel are coated with an ALD; a sensor die bonded to the stress isolation member, the sensor die comprising a diaphragm having circuitry, wherein a side of the diaphragm is exposed to the channel and the circuitry is mounted to another side of the diaphragm; a via extending through the sensing die electrically connecting the circuitry to the trace; and a cover bonded to the stress isolation member, the cover having a recess, the sensor die in the recess.

Abstract: Systems and methods for a pressure sensor are provided, where the pressure sensor comprises a housing having a high side input port that allows a high pressure media to enter a high side of the housing and a low side input port that allows a low pressure media to enter a low side of the housing when the housing is placed in an environment containing the high and low pressure media; a substrate mounted within the housing; a stress isolation member mounted to the substrate; a die stack having sensing circuitry bonded to the stress isolation member; a low side atomic layer deposition (ALD) applied to surfaces, of the substrate, the stress isolation member, and the die stack, exposed to the low side input port; and a high side ALD applied to surfaces, of the stress isolation member and the die stack, exposed to the high side input port.

Abstract: System and methods for silicon on insulator MEMS pressure sensors are provided. In one embodiment, a method comprises: applying a doping source to a silicon-on-insulator (SOI) silicon wafer having a sensor layer and an insulating layer comprising SiO2 material; doping the silicon wafer with Boron atoms from the doping source while controlling an injection energy of the doping to achieve a top-heavy ion penetration profile; and applying a heat source to diffuse the Boron atoms throughout the sensor layer of the SOI silicon wafer.

Abstract: Systems and methods for a pressure sensor are provided, where the pressure sensor comprises a housing having a high side input port that allows a high pressure media to enter a high side of the housing and a low side input port that allows a low pressure media to enter a low side of the housing when the housing is placed in an environment containing the high and low pressure media; a substrate mounted within the housing; a stress isolation member mounted to the substrate; a die stack having sensing circuitry bonded to the stress isolation member; a low side atomic layer deposition (ALD) applied to surfaces, of the substrate, the stress isolation member, and the die stack, exposed to the low side input port; and a high side ALD applied to surfaces, of the stress isolation member and the die stack, exposed to the high side input port.

Abstract: Systems and methods are provided for a deep sea pH sensor. In one embodiment, a method for manufacturing a pH sensor comprises forming a sensor electrode in a working surface of a die wherein the sensor electrode is able to sense the pH of a liquid and forming at least one isolation groove around the sensor electrode on the working surface of the die, wherein the die has a wide street around the sensor electrode and the at least one isolation groove. The method further comprises mounting the die onto a base and securing a seal on the working surface in the wide street, wherein the seal surrounds the isolation groove, the seal sealing the liquid within the portion of the working surface of the die containing the sensor electrode and the isolation groove, when the pH sensor is subjected to high pressure.