Abstract: Embodiments profile users and applications based on network data usage. Data usage statistics are collected and compared for the users and applications. Profiles are assigned to the users and applications based on the comparison. In some embodiments, the applications are ranked based on data usage and presented to the users in an application marketplace.

Abstract: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

Abstract: Systems, methods, and computer-readable media for analysis of call detail records to determine unauthorized use of a cellular network are provided. The transferred data amounts from call detail records may be compared to categorized data usage associated with a portable user device to determine uncategorized data usage by the portable user device. The uncategorized data usage and the categorized data usage may be analyzed to determine unauthorized use of the cellular network.

Abstract: Embodiments attribute network data transfers to applications executing on a computing device. A data transfer service executes on the computing device to receive and process data transfer requests. The data transfer requests, populated by the applications, have identifiers attributed thereto to enable monitoring of the network data transfers per identifier. For example, network data transfers associated with different mail accounts of a mail program or different web sites of browser are attributed separately. Data usage statistics relating to the network data transfers for each identifier may be generated and presented to the user for review.

Abstract: Embodiments enable data usage plans and data usage statistics to be shared among user computing devices. In some embodiments, a web service receives a schema populated with data describing the data usage plan from a mobile operator. The web service distributes the populated schema to the user computing devices, and subsequently distributes updated portions of the schema as the data usage plan is updated by the mobile operator. The web service may also collect the data usage statistics from the user computing devices and the mobile operator, reconcile any differences, and send synchronization notifications to the user computing devices based on the reconciliation. In some embodiments, users are able to view bandwidth consumption by a plurality of user computing devices sharing the same data usage plan.

Abstract: A memory device includes a capacitor, a tunneling-enhanced device, and a transistor. In accordance with an embodiment, capacitor has first and second electrodes wherein the first electrode of the capacitor serves as a control gate of the memory device. The tunneling-enhanced device has a first electrode and a second electrode, wherein the first electrode of the second capacitor serves as an erase gate of the memory device and the second electrode of the tunneling-enhanced device is coupled to the second electrode of the capacitor to form a floating gate. The transistor has a control electrode and a pair of current carrying electrodes, wherein the control electrode of the transistor is directly coupled to the floating gate. In accordance with another embodiment, a method for manufacturing the memory device includes a method for manufacturing the memory device.

Abstract: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

Abstract: Embodiments attribute network data transfers to applications executing on a computing device. A data transfer service executes on the computing device to receive and process data transfer requests. The data transfer requests, populated by the applications, have identifiers attributed thereto to enable monitoring of the network data transfers per identifier. For example, network data transfers associated with different mail accounts of a mail program or different web sites of browser are attributed separately. Data usage statistics relating to the network data transfers for each identifier may be generated and presented to the user for review.

Abstract: Embodiments enable data usage plans and data usage statistics to be shared among user computing devices. In some embodiments, a web service receives a schema populated with data describing the data usage plan from a mobile operator. The web service distributes the populated schema to the user computing devices, and subsequently distributes updated portions of the schema as the data usage plan is updated by the mobile operator. The web service may also collect the data usage statistics from the user computing devices and the mobile operator, reconcile any differences, and send synchronization notifications to the user computing devices based on the reconciliation. In some embodiments, users are able to view bandwidth consumption by a plurality of user computing devices sharing the same data usage plan.

Abstract: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

Abstract: Embodiments provide a schema for representing data usage plans and data usage statistics. The data usage plan describes threshold values associated with network connections of computing devices of the user. A web service dynamically generates data usage statistics for the computing devices to represent data consumed by the computing devices under the data usage plan. The schema is updated with the data usage statistics and distributed to the computing devices for presentation to the user.

Abstract: Embodiments automatically adjust one or more terms of a data usage plan of a user to reduce network transfer costs for the user. Data usage statistics representing network data consumption by at least one computing device of the user are received or collected. The data usage plan is compared with the data usage statistics (e.g., to estimate any excess network transfer costs), and the data usage plan is adjusted accordingly and based on other data usage plans or adjustments that are available.

Abstract: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

Abstract: Embodiments provide a schema for representing data usage plans and data usage statistics. The data usage plan describes threshold values associated with network connections of computing devices of the user. A web service dynamically generates data usage statistics for the computing devices to represent data consumed by the computing devices under the data usage plan. The schema is updated with the data usage statistics and distributed to the computing devices for presentation to the user.

Abstract: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

Abstract: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

Abstract: An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel structure can include upper electrodes, wherein the upper electrode of the capacitor has a first conductivity type, and the upper electrode of the tunnel structure includes at least a portion that has a second conductivity type opposite the first conductivity type. In another embodiment, a process of forming the nonvolatile memory is performed using a single poly process. In a further embodiment, charge carriers can tunnel through a gate dielectric layer of the state transistor during programming and tunnel through a tunnel dielectric of the tunnel transistor during erasing.

Abstract: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

Abstract: An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.

Abstract: An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel structure can include upper electrodes, wherein the upper electrode of the capacitor has a first conductivity type, and the upper electrode of the tunnel structure includes at least a portion that has a second conductivity type opposite the first conductivity type. In another embodiment, a process of forming the nonvolatile memory is performed using a single poly process. In a further embodiment, charge carriers can tunnel through a gate dielectric layer of the state transistor during programming and tunnel through a tunnel dielectric of the tunnel transistor during erasing.