Abstract: A battery employing lithium-oxygen chemistry may include an anode comprising lithium, an electrolyte, and a porous cathode. The electrolyte may include a lithium-containing salt; a partially fluorinated ether, such as 2,2-bis(trifluoromethyl)-1,3-dioxolane; and a co-solvent selected from the group consisting of ethers, amides, nitriles, and combinations thereof. In some examples, the electrolyte does not include a cyclic carbonate ester, a sulfolane, or a sulfolane derivative. The porous cathode allows oxygen to come into contact with the electrolyte.

Abstract: A method is described for selectively forming alumina film layers on a silicon oxide surface by atomic layer deposition (ALD) in the presence of a metal-containing surface when each surface is exposed to the ALD reactants (i.e., a blocking layer is not used to prevent ALD reactants from contacting the metal-containing layer). Also described are methods of determining conditions for area-selective atomic layer deposition (AS-ALD) on a substrate containing two or more different surface materials using a database of ALD reactions.

Abstract: Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

Abstract: A battery employing lithium-oxygen chemistry may include an anode comprising lithium, an electrolyte, and a porous cathode. The electrolyte may include a lithium-containing salt; a partially fluorinated ether, such as 2,2-bis(trifluoromethyl)-1,3-dioxolane; and a co-solvent selected from the group consisting of ethers, amides, nitriles, and combinations thereof. In some examples, the electrolyte does not include a cyclic carbonate ester, a sulfolane, or a sulfolane derivative. The porous cathode allows oxygen to come into contact with the electrolyte.

Abstract: A battery employing lithium-oxygen chemistry may include an anode comprising lithium, an electrolyte, and a porous cathode. The electrolyte may include a lithium-containing salt; a partially fluorinated ether, such as 2,2-bis(trifluoromethyl)-1,3-dioxolane; and a co-solvent selected from the group consisting of ethers, amides, nitriles, and combinations thereof. In some examples, the electrolyte does not include a cyclic carbonate ester, a sulfolane, or a sulfolane derivative. The porous cathode allows oxygen to come into contact with the electrolyte.

Abstract: A lithium-oxygen battery may include an anode, a cathode, and an electrolyte between, and in contact with, the anode and the cathode. The anode may include lithium and/or a lithium alloy. In some examples, the cathode defines a surface that is predominantly metal oxide with an electron conductivity of at least 10?1 Siemens per centimeter. In some examples, the cathode defines a surface in contact with oxygen, and includes ruthenium oxide. In some examples, the cathode defines a surface that is substantially covered by ruthenium oxide and is in contact with oxygen.

Abstract: A battery employing lithium-oxygen chemistry may include an anode comprising lithium, an electrolyte, and a porous cathode. The electrolyte may include a lithium-containing salt; a partially fluorinated ether, such as 2,2-bis(trifluoromethyl)-1,3-dioxolane; and a co-solvent selected from the group consisting of ethers, amides, nitriles, and combinations thereof. In some examples, the electrolyte does not include a cyclic carbonate ester, a sulfolane, or a sulfolane derivative. The porous cathode allows oxygen to come into contact with the electrolyte.

Abstract: A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites.

Abstract: Provided are chemically amplified resist compositions that include acid-labile sulfonate-ester photoresist polymers that are developable in an organic solvent. The chemically amplified resists produce high resolution positive tone development (PTD) and negative tone development (NTD) images depending on the selection of organic development solvent. Furthermore, the dissolution contrast of the traditional chemically amplified resists may be optimized for dual tone imaging through the addition of a photoresist polymer comprising an acid-labile sulfonate-ester moiety.

Abstract: Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties.

Abstract: Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties.

Abstract: A lithium-oxygen battery may include an anode, a cathode, and an electrolyte between, and in contact with, the anode and the cathode. The anode may include lithium and/or a lithium alloy. In some examples, the cathode defines a surface that is predominantly metal oxide with an electron conductivity of at least 10?1 Siemens per centimeter. In some examples, the cathode defines a surface in contact with oxygen, and includes ruthenium oxide. In some examples, the cathode defines a surface that is substantially covered by ruthenium oxide and is in contact with oxygen.

Abstract: Provided are novel symmetrical and asymmetrical bifunctional photodecomposable bases (PDBs) with dicarboxylate anion groups that show increased imaging performance. Also provided are photoresist compositions prepared with the bifunctional dicarboxylated PDBs and lithography methods that use the photoresist compositions of the present invention.

Abstract: Provided are novel symmetrical and asymmetrical bifunctional photodecomposable bases (PDBs) with dicarboxylate anion groups that show increased imaging performance. Also provided are photoresist compositions prepared with the bifunctional dicarboxylated PDBs and lithography methods that use the photoresist compositions of the present invention.

Abstract: Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.

Abstract: Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

Abstract: A method of lithography is disclosed, which allows for independent resist process optimization of two or more exposure steps that are performed on a single resist layer. By providing for a separate post-exposure bake after each resist exposure step, pattern resolution for each exposure can be optimized. The method can generally be used with different lithographic techniques, and is well-suited for hybrid lithography. It has been applied to the fabrication of a device, in which the active area and the gate levels are defined in separate mask levels using hybrid lithography with an e-beam source and a 248 nm source respectively. Conditions for post-exposure bakes after the two exposure steps are independently adjusted to provide for optimized results.

Abstract: Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.

Abstract: Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organosilicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

Abstract: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.