Abstract: The present invention provides a novel means to provide more effective mixing of quench gas and process fluids in a height constrained interbed space of a catalytic reactor without increasing pressure drop. In particular, the device improves the effectiveness of an existing mixing volume in mixing the gas phase of two-phase systems. According to the present invention, the quench zone hardware contained within the reactor includes a substantially vertical continuous perimeter solid baffle attached to the underside of the collection tray.

Abstract: A chemical mechanical polishing pad (200) that includes a polishing layer (204) having a polishing region (208) and containing a plurality of grooves (212) extending at least partially into the polishing region. During polishing, the grooves contain a slurry (236) that facilitates polishing. Each groove includes a plurality of mixing structures (220) configured to cause mixing of slurry located in a lower portion (240) of the groove with slurry located in the upper portion (244) of the groove.

Abstract: A textured surface characterization system (100) includes a characterization apparatus (110) that contacts a textured surface (104) of an item (108) in order to characterize that surface. The characterization system includes a fluid delivery system (204) for flowing a fluid (128) across the textured surface when the textured surface is in contact with the characterization apparatus. Pressure measurement structures (144, 160) on the characterization apparatus provide pressure data for the fluid as it flows across the textured surface. This pressure data is used to characterize the textured surface.

Abstract: A polishing pad (104, 300, 400, 500) for polishing a wafer (112, 516), or other article. The polishing pad includes a polishing layer (108) containing a plurality of grooves ((148, 152, 156)(304, 308, 324)(404, 408, 424)(520, 524, 528)) having orientations largely parallel to one or more corresponding respective velocity vectors (V1–V4)(V1?–V4?)(V1?–V4?)(V1??–V4??) of the wafer. These parallel orientations promote the formation of mixing wakes in a polishing medium (120) within these grooves during polishing.

Abstract: A polymerization process and polymerization reactor are provided. For example, a polymerization process is described, including passing a feed stream including liquid and gas through a feed stream inlet disposed proximate an upflow polymerization reactor, passing the feed stream through a member configured to impart an angular velocity to the feed stream and entrain the liquid in the gas, and contacting the feed stream with a catalyst to polymerize the feed stream.

Abstract: A polishing pad (104, 300, 400, 500) for polishing a wafer (112, 516), or other article. The polishing pad includes a polishing layer (108) having a polishing region (164, 320, 420, 504) defined by first and second boundaries ((168, 172), (312, 316), (412, 416) (508, 512)) having shapes and locations that are a function of the size of polished surface (116) of the article being polished and the type of polisher (100) used. The polishing region has several zones ((Z1–Z3) (Z1?–Z3?)(Z1?–Z3?)(Z1??–Z3??)) each containing corresponding grooves ((148, 152, 156)(304, 308, 324)(404, 408, 424)(520, 524, 528)) having orientations selected based on the direction of one or more velocity vectors (V1–V4)(V1?–V4?)(V1?–V4?) (V??–V4??) of the wafer in that zone.

Abstract: A method of polishing a surface (120) of an article, e.g., a semiconductor wafer (112, 212), using a polishing layer (108, 208) in the presence of a polishing medium, such as a slurry (116). The method includes selecting the rotational rate of the article or the velocity of the polishing layer, or both, so as to control either removal rate uniformity or the occurrence of defects on the polished surface, or both.

Abstract: A polishing body, e.g., pad (200, 230, 260, 300) or belt (400, 500) having a polishing layer (214, 404) that includes a backmixing region (202, 232, 262, 308, 416, 508) wherein backmixing can occur within a slurry (116) between a wafer (204, 234, 264, 304, 408), or other article, and the polishing layer under certain conditions. The polishing layer includes a first groove configuration (206, 236, 266, 312, 428, 504) within the backmixing region and a second grove configuration (208, 238, 268, 320, 432, 520) outside of the backmixing region that is different from the first groove configuration. The first groove configuration is designed based upon whether or not the presence of spent slurry within the backmixing region is detrimental or beneficial to polishing the wafer.

Abstract: A mixing system is disclosed which provides improved multiphase mixing through the use of a novel quench injection means. The mixing system comprises a horizontal collection tray, a mixing chamber positioned below the collection tray, and at least one passageway extending through the collection tray into the mixing chamber. The mixing chamber and the collection tray define a two-phase mixing volume. The passageway conducts fluid from above the collection tray into the mixing chamber. The mixing chamber preferably includes at least one outlet opening for the downward passage of fluid. In particular, mixing of quench fluid is significantly improved when quench is introduced into a region above the collection tray and where a preferred direction of quench injection is selected to cause a rotational current on the collection tray.

Abstract: A mixing system is disclosed which provides improved multiphase mixing through the use of a novel quench injection means. The mixing system comprises a horizontal collection tray, a mixing chamber positioned below the collection tray, and at least one passageway extending through the collection tray into the mixing chamber. The mixing chamber and the collection tray define a two-phase mixing volume. The passageway conducts fluid from above the collection tray into the mixing chamber. The mixing chamber preferably includes at least one outlet opening for the downward passage of fluid. In particular, mixing of quench fluid is significantly improved when quench is introduced into a region above the collection tray and where (i) lateral velocities of the process fluids are low, (ii) sufficient volume is available for the quench fluid to mix with the process fluids, and (iii) quench injection occurs opposite the prevailing direction of process fluid flow.

Abstract: A polishing pad useful for chemical mechanical planarization has a polishing layer for planarizing substrates. The polishing layer comprises a radius that extends from a center of the polishing layer to an outer perimeter of the polishing layer; one or more continuous grooves formed in the polishing layer and extending inward from the outer perimeter of the polishing layer; and a circumference fraction grooved (CF). The CF occurs in the area extending from the outer perimeter of the polishing layer a majority distance to the center of the polishing layer; and CF is that portion of circumference at a given radius lying across the one or more continuous grooves divided by full circumference at the given radius. The CF remains within 25% of its average value as a function of the polishing layer radius.

Abstract: The present invention comprises a mixing system that provides improved mixing of quench gas and process fluids in a height constrained interbed space while not increasing pressure drop. In particular, the device improves the effectiveness of an existing mixing volume in mixing the gas phase of two-phase systems. The mixing system includes a horizontal collection tray, a mixing chamber positioned below the collection tray, at least one passageway extending through the collection tray into the mixing chamber, and a vapor slipstream passageway extending through the collection tray into the mixing chamber for directing a vapor slipstream from above the collection tray into the mixing chamber. The mixing chamber and the collection tray define a two-phase mixing volume. The passageway conducts fluid containing at least some vapor from above the collection tray into the mixing chamber. The mixing chamber preferably includes at least one outlet opening for the downward passage of fluid.

Abstract: The present invention provides a novel means to provide more effective mixing of quench gas and process fluids in a height constrained interbed space of a catalytic reactor without increasing pressure drop. In particular, the device improves the effectiveness of an existing mixing volume in mixing the gas phase of two-phase systems. According to the present invention, the quench zone hardware contained within the reactor includes a substantially vertical continuous perimeter solid baffle attached to the underside of the collection tray.

Abstract: A polymerization process and polymerization reactor are provided. For example, a polymerization process is described, including passing a feed stream including liquid and gas through a feed stream inlet disposed proximate an upflow polymerization reactor, passing the feed stream through a member configured to impart an angular velocity to the feed stream and entrain the liquid in the gas, and contacting the feed stream with a catalyst to polymerize the feed stream.

Abstract: A fluid inlet nozzle distributor for a downflow fixed bed reactor which is a cylindrical housing having inlet and outlet openings and a swirl chamber disposed within said housing, whereby said swirl chamber imparts rotational motion to a fluid exiting said inlet nozzle.

Abstract: An apparatus for mixing vapor and liquid reactants within a column. The apparatus forms a first mixing zone into which a first reactant (e.g. vapor) is homogenized by swirl flow and flows vertically downward. The apparatus further forms a second mixing zone into which a second reactant (e.g., liquid) is homogenized by swirl flow and flows vertically downward. Additional amounts of either the first reactant, the second reactant or both may be added into or ahead of the first mixing zone or the second mixing zone as appropriate. The first reactant is directed radially to collide in crossflow with a thin sheet of the second reactant to provide intense mixing of the first and second reactants. Due to separate mixing zones for the two reactants, the mixing conditions for each can be tailored to best mix each reactant while minimizing pressure drop and minimizing the space and volume requirements for this mixing.

Abstract: An apparatus for mixing vapor and liquid reactants within a column. The apparatus forms a first mixing zone into which a first reactant (e.g., vapor) is homogenized by swirl flow and flows vertically downward. The apparatus further forms a second mixing zone into which a second reactant (e.g., liquid) is homogenized by swirl flow and flows vertically downward. Additional amounts of either the first reactant, the second reactant or both may be added into or ahead of the first mixing zone or the second mixing zone as appropriate. The first reactant is directed radially to collide in crossflow with a thin sheet of the second reactant to provide intense mixing of the first and second reactants. Due to separate mixing zones for the two reactants, the mixing conditions for each can be tailored to best mix each reactant while minimizing pressure drop and minimizing the space and volume requirements for this mixing.

Abstract: A distributor system for uniformly directing vapor and liquid across the surface of a fixed bed of solids in a downflow reactor comprising a distributor tray, and a plurality of open-ended downpipes extending through the tray. A first array of the downpipes has a plurality of vertically spaced elevations of holes above the level of the tray. A second array of the downpipes has at least one elevation of holes at substantially the same height above the level of the tray as one of the upper elevations of holes in the first array of the downpipes. But, the second array has no elevation of holes corresponding to the lowermost elevation of holes, and possibly other lower elevations of holes, in the first array of downpipes. The absence of the lowermost holes in the second array of downpipes causes the liquid flow rate through the distributor tray at a given liquid height to be reduced when that liquid height falls below the elevation of the holes second from the bottom in the first array.

Abstract: A process and apparatus for short contact time fluidized catalytic cracking of heavy oil feed using a reactor with an upflow cat:oil vaporizer and a downflow reactor. Catalyst slip permits efficient mixing and limited conversion in the upflow section, while cracking is completed in the downflow reactor with minimal segregation of catalyst. FCC catalyst with more than 25 wt % Y zeolite content is preferred, and total vapor residence time should be less than 5 seconds.

Abstract: A process for fluidized catalytic cracking of heavy feed to minimize yields of heavy fuel oil is disclosed. Operating a reactor with a 15:1 to 30:1 cat:oil ratio, at a reactor temperature of 1000.degree. to 1100.degree. F., and 1.5 to 5.0 seconds of catalyst residence time produces large volumes of gasoline and less than 5.0 wt % heavy fuel oil. A catalyst cooler is essential, to provide cool catalyst to the riser while permitting the regenerator to operate at 1200.degree. F. or higher. FCC catalyst with over 25 wt % large pore zeolite is preferred.