Abstract: An apparatus is provided which comprises: a substrate comprising a transparent material; and an array of transparent active devices disposed on the substrate, wherein each transparent active device comprises a sensing element associated with the transparent active device.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer overlying the substrate. Source/drain (S/D) regions are formed in contact with the active MOS layer. A channel region is interposed between the S/D regions. The TFT includes a gate electrode, and a gate dielectric interposed between the channel region and the gate electrode. The active MOS layer may be ZnOx, InOx, GaOx, SnOx, or combinations of the above-mentioned materials. The active MOS layer also includes a primary dopant such as H, K, Sc, La, Mo, Bi, Ce, Pr, Nd, Sm, Dy, or combinations of the above-mentioned dopants. The active MOS layer may also include a secondary dopant.

Abstract: A solution process is provided for forming a textured transparent conductive oxide (TCO) film. The process provides a substrate, and forms a first layer on the substrate of metal oxide nanoparticles such as ZnO, In2O3, or SnO2. The metal oxide nanoparticles have a faceted structure with an average size greater than 100 nanometers (nm). Voids between the metal oxide nanoparticles have a size about equal to the size of the metal oxide nanoparticles. Then, a second layer is formed overlaying the first layer, filling the voids between the nanoparticles of the first layer, and completely covering the substrate. The result is a continuous TCO film having an average surface roughness that is created by the combination of first and second layers.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx wherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.

Abstract: A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.

Abstract: A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.

Abstract: A solution process is provided for forming a textured transparent conductive oxide (TCO) film. The process provides a substrate, and forms a first layer on the substrate of metal oxide nanoparticles such as ZnO, In2O3, or SnO2. The metal oxide nanoparticles have a faceted structure with an average size greater than 100 nanometers (nm). Voids between the metal oxide nanoparticles have a size about equal to the size of the metal oxide nanoparticles. Then, a second layer is formed overlaying the first layer, filling the voids between the nanoparticles of the first layer, and completely covering the substrate. The result is a continuous TCO film having an average surface roughness that is created by the combination of first and second layers.

Abstract: A MEMS-based fuel cell has a substrate, an electrolyte in contact with the substrate, a cathode in contact with the electrolyte, an anode spaced apart from the cathode and in contact with the electrolyte, and an integral manifold for supplying either a fuel or an oxidant or both together, the integral manifold extending over at least a portion of the electrolyte and over at least one of the anode and cathode. Methods for making and using arrays of the fuel cells are disclosed.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Abstract: A MEMS-based fuel cell has a substrate, an electrolyte in contact with the substrate, a cathode in contact with the electrolyte, an anode spaced apart from the cathode and in contact with the electrolyte, and an integral manifold for supplying either a fuel or an oxidant or both together, the integral manifold extending over at least a portion of the electrolyte and over at least one of the anode and cathode. Methods for making and using arrays of the fuel cells are disclosed.

Abstract: A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.

Abstract: A fuel cell has a substrate with a film deposited thereon. The film has nanowires dispersed therein. Catalytic activity and conductivity is substantially enhanced throughout the film.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: A photonic-crystal filament is formed by mixing a slurry comprising particles of substantially uniform size and a precursor material for a desired metal, urging the slurry through an orifice to force the particles and precursor material into a combination having a desired crystallographic configuration, drying the combination emerging from the orifice, and sintering the precursor material.

Abstract: One embodiment of a dielectric material may include a metal containing cation and a polyatomic anion.

Abstract: An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed.