Patents by Inventor Gregory S Herman

Gregory S Herman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8647031
    Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: February 11, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
  • Patent number: 8513720
    Abstract: A top gate and bottom gate thin film transistor (TFT) are provided with an associated fabrication method. The TFT is fabricated from a substrate, and an active metal oxide semiconductor (MOS) layer overlying the substrate. Source/drain (S/D) regions are formed in contact with the active MOS layer. A channel region is interposed between the S/D regions. The TFT includes a gate electrode, and a gate dielectric interposed between the channel region and the gate electrode. The active MOS layer may be ZnOx, InOx, GaOx, SnOx, or combinations of the above-mentioned materials. The active MOS layer also includes a primary dopant such as H, K, Sc, La, Mo, Bi, Ce, Pr, Nd, Sm, Dy, or combinations of the above-mentioned dopants. The active MOS layer may also include a secondary dopant.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: August 20, 2013
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Gregory S. Herman, Jer-shen Maa, Kanan Puntambekar, Apostolos T. Voutsas
  • Patent number: 8404302
    Abstract: A solution process is provided for forming a textured transparent conductive oxide (TCO) film. The process provides a substrate, and forms a first layer on the substrate of metal oxide nanoparticles such as ZnO, In2O3, or SnO2. The metal oxide nanoparticles have a faceted structure with an average size greater than 100 nanometers (nm). Voids between the metal oxide nanoparticles have a size about equal to the size of the metal oxide nanoparticles. Then, a second layer is formed overlaying the first layer, filling the voids between the nanoparticles of the first layer, and completely covering the substrate. The result is a continuous TCO film having an average surface roughness that is created by the combination of first and second layers.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: March 26, 2013
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Jer-shen Maa, Gregory S. Herman, Apostolos T. Voutsas
  • Patent number: 8314420
    Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx wherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: November 20, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
  • Publication number: 20120208318
    Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
    Type: Application
    Filed: April 25, 2012
    Publication date: August 16, 2012
    Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
  • Patent number: 8203144
    Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
    Type: Grant
    Filed: May 13, 2010
    Date of Patent: June 19, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
  • Patent number: 8143616
    Abstract: A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: March 27, 2012
    Assignees: Oregon State University, Hewlett Packard Development Company, L.P.
    Inventors: Gregory S. Herman, Peter Mardilovich, Chinmay Betrabet, Chih-hung Chang, Yu-jen Chang, Doo-Hyoung Lee, Mark W. Hoskins
  • Patent number: 8143706
    Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.
    Type: Grant
    Filed: July 16, 2007
    Date of Patent: March 27, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Peter Mardilovich, Laura Kramer, Gregory S Herman, Randy Hoffman, David Punsalan
  • Patent number: 8143128
    Abstract: A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: March 27, 2012
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Gregory S. Herman, Peter Mardilovich, Randy L. Hoffman, Laura Lynn Kramer, Kurt M. Ulmer
  • Publication number: 20120015147
    Abstract: A solution process is provided for forming a textured transparent conductive oxide (TCO) film. The process provides a substrate, and forms a first layer on the substrate of metal oxide nanoparticles such as ZnO, In2O3, or SnO2. The metal oxide nanoparticles have a faceted structure with an average size greater than 100 nanometers (nm). Voids between the metal oxide nanoparticles have a size about equal to the size of the metal oxide nanoparticles. Then, a second layer is formed overlaying the first layer, filling the voids between the nanoparticles of the first layer, and completely covering the substrate. The result is a continuous TCO film having an average surface roughness that is created by the combination of first and second layers.
    Type: Application
    Filed: July 14, 2010
    Publication date: January 19, 2012
    Inventors: Jer-shen Maa, Gregory S. Herman, Apostolos T. Voutsas
  • Patent number: 7981560
    Abstract: A MEMS-based fuel cell has a substrate, an electrolyte in contact with the substrate, a cathode in contact with the electrolyte, an anode spaced apart from the cathode and in contact with the electrolyte, and an integral manifold for supplying either a fuel or an oxidant or both together, the integral manifold extending over at least a portion of the electrolyte and over at least one of the anode and cathode. Methods for making and using arrays of the fuel cells are disclosed.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: July 19, 2011
    Assignee: Eveready Battery Company, Inc.
    Inventors: Daniel A Kearl, David Champion, Gregory S Herman, Richard B. Peterson
  • Patent number: 7838348
    Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: November 23, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
  • Publication number: 20100279207
    Abstract: A MEMS-based fuel cell has a substrate, an electrolyte in contact with the substrate, a cathode in contact with the electrolyte, an anode spaced apart from the cathode and in contact with the electrolyte, and an integral manifold for supplying either a fuel or an oxidant or both together, the integral manifold extending over at least a portion of the electrolyte and over at least one of the anode and cathode. Methods for making and using arrays of the fuel cells are disclosed.
    Type: Application
    Filed: December 20, 2007
    Publication date: November 4, 2010
    Inventors: Daniel A. Kearl, David Champion, Gregory S. Herman, Richard B. Peterson
  • Publication number: 20100279514
    Abstract: A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.
    Type: Application
    Filed: July 9, 2010
    Publication date: November 4, 2010
    Inventors: Gregory S. Herman, Peter Mardilovich, Randy L. Hoffman, Laura Lynn Kramer, Kurt M. Ulmer
  • Patent number: 7790331
    Abstract: A fuel cell has a substrate with a film deposited thereon. The film has nanowires dispersed therein. Catalytic activity and conductivity is substantially enhanced throughout the film.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: September 7, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: David Champion, Neal W. Meyer, Peter Mardilovich, Gregory S Herman
  • Publication number: 20100219411
    Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
    Type: Application
    Filed: May 13, 2010
    Publication date: September 2, 2010
    Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
  • Patent number: 7777403
    Abstract: A photonic-crystal filament is formed by mixing a slurry comprising particles of substantially uniform size and a precursor material for a desired metal, urging the slurry through an orifice to force the particles and precursor material into a combination having a desired crystallographic configuration, drying the combination emerging from the orifice, and sintering the precursor material.
    Type: Grant
    Filed: January 28, 2004
    Date of Patent: August 17, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: David Champion, Gregory S. Herman, Hubert A. Vander Plas, David M. Schut
  • Patent number: 7773365
    Abstract: One embodiment of a dielectric material may include a metal containing cation and a polyatomic anion.
    Type: Grant
    Filed: April 30, 2004
    Date of Patent: August 10, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Gregory S. Herman, Peter Mardilovich, Douglas Keszler, Jeremy Anderson
  • Patent number: 7768080
    Abstract: An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed.
    Type: Grant
    Filed: July 30, 2007
    Date of Patent: August 3, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Gregory S. Herman, Peter Mardilovich, Randy L. Hoffman, Laura Lynn Kramer, Kurt M. Ulmer
  • Patent number: 7732251
    Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: June 8, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Randy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich