Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Abstract: A system performs a method including contact printing one of a wetting agent and a non-wetting agent on a semiconductor and inkjet printing an electrically conductive material proximate said one of the wetting agent and the non-wetting agent.

Abstract: A Si nanoparticle precursor, precursor fabrication process, and precursor deposition process are presented. The method for forming a silicon (Si) nanoparticle precursor provides a plurality of nanoparticle classes, including at least one Si nanoparticle class. The nanoparticles in each nanoparticle class are defined as having a predetermined diameter. A predetermined amount of each nanoparticle class is measured and combined. For example, a first Si nanoparticle class may be provided having a largest diameter and a second Si nanoparticle class having a second-largest diameter equal to about (0.43)×(the largest diameter). As another example, Si nanoparticle classes may foe provided having a diameter ratio of about 77:32:17.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Abstract: A method for manufacturing an electrolyte includes coupling a substrate to a charged electrode and electrodepositing a polymeric electrolyte on the substrate.

Abstract: A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.

Abstract: A fuel cell includes at least one electrode operatively disposed in the fuel cell, and having a catalytically active surface. The present invention further includes a mechanism for maintaining a substantially uniform maximum catalytic activity over the surface of the electrode.

Abstract: One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.

Abstract: A method for making a structure includes depositing a solution upon a surface and irradiating the solution with microwaves to crystallize solute of the solution on the surface.

Abstract: A method for making a photonic structure, including creating a first vapor stream of a first vapor material, the first vapor stream having a first non-uniform flux in at least one direction; and moving a substrate in at least a portion of the vapor stream. In addition, the method includes depositing the first vapor material on a first major surface of said substrate, and forming a first layer and a density gradient in the first layer during deposition. The first layer is disposed on and the density gradient is in a direction perpendicular to the first major surface.

Abstract: An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed.

Abstract: A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.

Abstract: A method for making a porous film includes the steps of forming a cermet film and/or a ceramic film by depositing or co-depositing suitable materials on a substrate, and causing metal in the material(s) to reduce and/or to diffuse to the cermet film surface and/or the ceramic film surface to render the porous film.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

Abstract: A method of operating a fuel cell includes supplying a gas stream to the fuel cell and oscillating the gas stream.

Abstract: Subject matter includes a fuel cell with a catalytic combustor seal and related methods. The catalytic converter is positioned to come in contact with a fuel after the fuel has traversed a path over an intended electrode and the fuel is catalytically converted before the fuel can come in contact with an unintended electrode.

Abstract: A MEMS-based fuel cell has a substrate, an electrolyte in contact with the substrate, a cathode in contact with the electrolyte, an anode spaced apart from the cathode and in contact with the electrolyte, and an integral manifold for supplying either a fuel or an oxidant or both together, the integral manifold extending over at least a portion of the electrolyte and over at least one of the anode and cathode. Methods for making and using arrays of the fuel cells are disclosed.

Abstract: A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion disposed on the plurality of circuit components, and a patterned passivation dielectric selectively disposed on the unpatterned channel portion to electrically pattern an active region of the unpatterned channel portion.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device comprising a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.