Abstract: A method of quantum efficiency (QE) photovoltaic measurement is provided that includes coupling measurement electronics to a p-n junction of a Cell Under Test (CUT) that are capable of measuring a pulsed DC photocurrent. The measurement electronics output a response by the CUT to turning on and turning off the pulsed DC photocurrent that are digitized and analyzed for the magnitude that is representative of a conversion efficiency of the CUT to a wavelength of the DC photocurrent, where a measured decay time represents the p-n junction or the minority carrier lifetime. The CUT is exposed to the pulsed DC photocurrent, where signatures of the response to turning off and on to the pulsed DC photocurrent overlap, where a combined amplitude of the response is proportional to an efficiency of a production of photocarriers, where a value of a spectral response at a wavelength is determined.

Abstract: A method of quantum efficiency (QE) photovoltaic measurement is provided that includes coupling measurement electronics to a p-n junction of a Cell Under Test (CUT) that are capable of measuring a pulsed DC photocurrent. The measurement electronics output a response by the CUT to turning on and turning off the pulsed DC photocurrent that are digitized and analyzed for the magnitude that is representative of a conversion efficiency of the CUT to a wavelength of the DC photocurrent, where a measured decay time represents the p-n junction or the minority carrier lifetime. The CUT is exposed to the pulsed DC photocurrent, where signatures of the response to turning off and on to the pulsed DC photocurrent overlap, where a combined amplitude of the response is proportional to an efficiency of a production of photocarriers, where a value of a spectral response at a wavelength is determined.

Abstract: The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.

Abstract: The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.

Abstract: The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.

Abstract: The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.

Abstract: Systems configured to perform a non-contact method for determining a property of a specimen are provided. One system configured to perform a non-contact method for determining a property of a specimen includes a focused biasing device configured to provide a stimulus to a focused spot on the specimen. The system also includes a sensor configured to measure a parameter of a measurement spot on the specimen. The measurement spot overlaps the focused spot. The system further includes a processor configured to determine the property of the specimen from the parameter.

Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

Abstract: Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

Abstract: A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.

Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

Abstract: Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.

Abstract: Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

Abstract: Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.

Abstract: A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.

Abstract: Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.

Abstract: Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.

Abstract: Non-contact methods for determining a property of an insulating film are provided. One method includes measuring an amount of hysteresis in the insulating film without contacting the insulating film. The method also includes determining the amount of hysteresis in the insulating film. Computer-implemented methods for data analysis are also provided. One computer-implemented method includes determining a single numeric value representing an amount of hysteresis in an insulating film from electrical characteristics of the insulating film. The electrical characteristics are measured without contacting the insulating film. In addition, systems that include a measurement system and a computer-usable carrier medium are provided. The measurement system is configured to measure an amount of hysteresis in an insulating film without contacting the insulating film.

Abstract: Non-contact methods for determining a property of an insulating film are provided. One method includes measuring an amount of hysteresis in the insulating film without contacting the insulating film. The method also includes determining the amount of hysteresis in the insulating film. Computer-implemented methods for data analysis are also provided. One computer-implemented method includes determining a single numeric value representing an amount of hysteresis in an insulating film from electrical characteristics of the insulating film. The electrical characteristics are measured without contacting the insulating film. In addition, systems that include a measurement system and a computer-usable carrier medium are provided. The measurement system is configured to measure an amount of hysteresis in an insulating film without contacting the insulating film.

Abstract: Corona charges are used to bias a wafer to push down mobile charges and then pull them up during temperature cycles. Mobile charge is measured from the drops in the corona voltage due to the mobile charges. Corrections are made in the measurements for dipole potentials, leakage and silicon band-bending.