Abstract: A micropump device including a first wafer and a second wafer attached to the first wafer. The first and second wafers are configured to define a chamber therebetween having a predetermined volume. A third wafer is attached to the second wafer to define an inlet section and an outlet section in fluid communication with the chamber. At least one of the second and third wafers are formed to define a moveable diaphragm configured to change the predetermined volume of the chamber for pumping a fluid between the inlet section and the outlet section.

Abstract: A flow unit for microfluidic particles separation and concentration is disclosed. The unit comprises a nozzle segment, a turn segment, and a diffuser segment. The nozzle segment is defined by a first member and a second member, and has an opening through which fluid and microfluidic particles enter. The nozzle segment has a narrowing portion at which the first and second members narrow from the opening to increase momentum of the fluid therethrough. The turn segment is defined by the first member flaring outwardly downstream from the narrowing portion to change flow direction of the fluid consistent with the first member. The diffuser segment is defined by the second member extending past the turn segment to facilitate separation of the microfluidic particles from the fluid due to the inability to follow the fluid flow.

Abstract: Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.

Abstract: A multisurfaced microdevice system array is produced from a wafer formed of semiconductor substrate material. Sensing, controlling and actuating microdevices are fabricated at specific location on both sides of the wafer, and the wafer is diced. Each die thus created is then formed into a multisurfaced, multifaced structure having outer and inner faces. The multifaced structure and the microdevices form a standardized microdevice system, and cooperatively combined microdevice systems form a microdevice system array. Communication of energy and data to and between microdevices on each and other microdevice systems of the microdevice system array is provided by energy transferring devices including electric conductors for transferring electric energy, ultrasound emitters and receivers for transferring acoustic energy, and electromagnetic energy emitters and receivers for transferring electromagnetic energy.

Abstract: Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surface to provide two-dimensional heat transfer across the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form a nano-structure having an apical nano-tip for electron extraction.

Abstract: A thin film titanium dioxide and method for producing the same are disclosed. The thin film titanium dioxide may be produced to have a thickness in the range of 100-1000 nm. The disclosed method for producing the thin film titanium dioxide includes performing a magnetron reactive sputtering process to vaporize at least portions of a titanium source in a sputtering chamber that is supplied with gaseous oxygen. The vaporized titanium reacts with the oxygen to form titanium dioxide, which is deposited on a substrate within the sputtering chamber. A solar cell and a carbon monoxide sensor utilizing the thin film titanium dioxide of the present invention are also disclosed.

Abstract: Device quality, single crystal film of cubic zinc-blende aluminum nitride (AlN) is deposited on a cubic substrate, such as a silicon (100) wafer by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AlN is deposited on the substrate at a low temperature by a low energy plasma beam of high-energy activated aluminum ions and nitrogen ion species produced in a molecular beam epitaxy system by applying a pulsed d.c. power to a hollow cathode source. In this manner, films having a thickness of at least 800 ? were produced. The lattice parameter of as-deposited films was calculated to be approximately 4.373 ? which corresponds closely to the theoretical calculation (4.38 ?) for cubic zinc-blende AlN. An interfacial layer of silicon carbide, specifically the cubic 3C—SiC polytype, interposed between the epitaxial film of zinc-blende AlN and the Si(100) wafer provides a template for growth and a good lattice match.

Abstract: A waveguide structure for transmitting broad spectrum light, includes a wide bandgap semiconductor thin film arranged on a substrate and ablated to form a waveguide channel to transmit the broad spectrum light.

Abstract: Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AlN) as the “insulator” in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AlN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AlN/Si and Pd/AlN/SiC wherein the SiC is preferably 6H—SiC.

Abstract: A self-assembled nanobump array structure including a semi-absorbing outer layer provided on at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer, in which the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.

Abstract: An acoustic wave sensor to detect an analyte, the sensor comprising a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy.

Abstract: A waveguide structure for transmitting broad spectrum light, includes a wide bandgap semiconductor thin film arranged on a substrate and ablated to form a waveguide channel to transmit the broad spectrum light.

Abstract: An imaging system having at least one microsystem array that is made using a wide bandgap semiconductor and configured in a pixel arrangement. The imaging system also including an electronic readout arrangement integrated with the at least one microsystem array.

Abstract: A self-assembled nanobump array structure including a semi-absorbing outer layer provided on at least one nanobump-forming substrate layer, the semi-absorbing outer layer configured to ablate slowly to allow an applied laser energy to be transmitted to the at least one nanobump-forming substrate layer, in which the self-assembled nanobump array structure is formed by an energy and a pressure buildup occurring in the at least one nanobump-forming substrate layer.

Abstract: An acoustoelectronic method and apparatus for generating real-time three-dimensional images of an object and characterizing such object are provided. The object is insonified with an incident acoustic signal derived from an electrical signal. Acoustic signals scattered from the object are collected by an acoustic receiver, which generates analog electrical signals that are subsequently converted to digital electronic signals. The digital electronic signals are used in both direct-imaging and holographic methods to produce a three-dimensional representation of the object from which images and characterizations can be generated.

Abstract: An acoustic wave sensor to detect an analyte, the sensor comprising a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy.

Abstract: Device quality, single crystal film of cubic zinc-blende aluminum nitride (AlN) is deposited on a cubic substrate, such as a silicon (100) wafer by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AlN is deposited on the substrate at a low temperature by a low energy plasma beam of high-energy activated aluminum ions and nitrogen ion species produced in a molecular beam epitaxy system by applying a pulsed d.c. power to a hollow cathode source. In this manner, films having a thickness of at least 800 Å were produced. The lattice parameter of as-deposited films was calculated to be approximately 4.373 Å which corresponds closely to the theoretical calculation (4.38 Å) for cubic zinc-blende AlN. An interfacial layer of silicon carbide, specifically the cubic 3C—SiC polytype, interposed between the epitaxial film of zinc-blende AlN and the Si(100) wafer provides a template for growth and a good lattice match.

Abstract: An acoustoelectronic method and apparatus for generating real-time three-dimensional images of an object and characterizing such object are provided. The object is insonified with an incident acoustic signal derived from an electrical signal. Acoustic signals scattered from the object are collected by an acoustic receiver, which generates analog electrical signals that are subsequently converted to digital electronic signals. The digital electronic signals are used in both direct-imaging and holographic methods to produce a three-dimensional representation of the object from which images and characterizations can be generated.

Abstract: Device quality, single crystal film of cubic zinc-blend aluminum nitride (AlN) is deposited on a cubic substrate, such as a silicon (100) wafer by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blend form of AlN is deposited on the substrate at a low temperature by a low energy plasma beam of high-energy activated aluminum ions and nitrogen ion species produced in a molecular beam epitaxy system by applying a pulsed d.c. power to a hollow cathode source. In this manner, films having a thickness of at least 800 Å were produced. The lattice parameter of as-deposited films was calculated to be approximately 4.373 Å which corresponds closely to the theoretical calculation (4.38 Å) for cubic zinc-blend AlN. An interfacial layer of silicon carbide, specifically the cubic 3C—SiC polytype, interposed between the epitaxial film of zinc-blend AlN and the Si(100) wafer provides a template for growth and a good lattice match.

Abstract: An acoustoelectronic method and apparatus for generating real-time three-dimensional images of an object and characterizing such object are provided. The object is insonified with an incident acoustic signal derived from an electrical signal. Acoustic signals scattered from the object are collected by an acoustic receiver, which generates analog electrical signals that are subsequently converted to digital electronic signals. The digital electronic signals are used in both direct-imaging and holographic methods to produce a three-dimensional representation of the object from which images and characterizations can be generated.