Abstract: A thermal-stress-absorbing interface structure between a semiconductor integrated circuit chip and a surface-mount structure and a method for manufacturing the same. The thermal-stress-absorbing interface structure comprises an elongated conductive-bump pad having a first length-wise end and a second length-wise end, and a side. The thermal-stress-absorbing interface structure includes means for allowing the first end of the pad to move up when the second end of the pad moves down and alternately allowing the first end to move down when the second end moves up, upon thermal cycling. The means has a center axis and the up-and-down movements of the pad are balanced on the center axis.

Abstract: A thermal-stress-absorbing interface structure between a semiconductor integrated circuit chip and a surface-mount structure and a method for manufacturing the same. The thermal-stress-absorbing interface structure comprises an elongated conductive-bump pad having a first length-wise end and a second length-wise end, and a side. The thermal-stress-absorbing interface structure includes means for allowing the first end of the pad to move up when the second end of the pad moves down and alternately allowing the first end to move down when the second end moves up, upon thermal cycling. The means has a center axis and the up-and-down movements of the pad are balanced on the center axis.

Abstract: A thin semiconductor package having a support film formed on an upper surface of the inner leads with a thickness approximately equal to the thickness of a portion of the molding compound overlaying the inner leads.

Abstract: An apparatus for burn-in test comprising, a socket body including an accommodation groove in which an integrated circuit chip is accommodated to be tested, a step sill portion formed around the accommodation groove, a plurality of inner leads formed on the step sill portion, a plurality of outer leads protruded from the socket body and electrically connected to said inner leads through the socket body, and a supporting element attached to opposite inside walls of the accommodation groove to support the integrated circuit chip, and a method for burn-in test comprising the steps of: (a) mounting an integrated circuit chip to be tested in the accommodation groove; (b) bonding pads of the integrated circuit chip with the corresponding inner leads through a plurality of wires; (c) mounting the socket body on a test board by the outer leads and applying test pattern signals to the integrated circuit chip through the inner and outer leads in the condition of high temperature and high voltage; and (d) severing and re

Abstract: A process of manufacturing a semiconductor chip that has a connecting pad and is connected to a front side of a circuit board that has a conductive trace connected to a through-hole. An insulating adhesive layer, which has a hole corresponding to the pad, is interposed between the chip and the board so that the pad, the hole in the insulating layer and the through-hole in the board are aligned. A conductive material is applied into the through-hole from the back side of the board so as to fill the through-hole and connect the pad to the trace. The conductive material may be applied using a sputtering method, a screening method, an electroplating method or an evaporating method. The back side of the board is polished to remove conductive material which may have been applied on the back side of the board outside the through-hole.

Abstract: A method of manufacturing and a structure of a semiconductor device has an I/O terminal whereby when individual semiconductor chips are separated from the semiconductor wafer manufactured according to this invention, the terminals are exposed on the edges of the semiconductor chip allowing for the interconnection of the terminals when the semiconductor chips are stacked. The bump electrode is formed using metal masks and magnets by mounting a solder ball on an aperture of a first mask to form the solder bump on an electrode pad provided on a semiconductor wafer. A conductive material forms a conductive pattern between the solder bumps of the individual semiconductor chips using an aperture of a second mask. The individual semiconductor chips which are separated from the semiconductor wafer are then easily stacked and packaged by use of the I/O terminals on the sides of the individual semiconductor chips.