Abstract: According to some embodiments, a system pre-processes, via a first thread, a captured image perceiving an environment surrounding the ADV obtained from an image capturing device of the ADV. The system processes, via a second thread, the pre-processed image with a corresponding depth image captured by a ranging device of the ADV using a machine learning model to detect vehicle lanes. The system post-processes, via a third thread, the detected vehicle lanes to track the vehicle lanes relative to the ADV. The system generates a trajectory based on a lane line of the tracked vehicle lanes to control the ADV autonomously according to the trajectory.

Abstract: A terminal device sends first information to a cloud device, where the first information indicates a posture and a location of the terminal device at a first moment. Then, the terminal device receives information about a first field of view image from the cloud device, where the first field of view image is a field of view image corresponding to the posture and the location of the terminal device at the first moment. The terminal device displays an image within a field of view range of the terminal device at a second moment based on the information about the first field of view image and a posture change and a location change of the terminal device from the first moment to the second moment.

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

Abstract: The present disclosure relates to systems and methods for selecting a best facial image of a target human face. The methods may include determining whether a candidate facial image is obtained before a time point in a time period threshold, wherein the candidate facial image has a greatest quality score of the target human face among a plurality of facial images of the target human face; in response to a determination that the candidate facial image is obtained before the time point, determining the candidate facial image as the best facial image of the target human face; and storing the best facial image together with a face ID and the greatest quality score of the target human face in a face log.

Abstract: A method includes forming a first gate structure over a substrate, where the first gate structure is surrounded by a first dielectric layer; and forming a mask structure over the first gate structure and over the first dielectric layer, where forming the mask structure includes selectively forming a first capping layer over an upper surface of the first gate structure; and forming a second dielectric layer around the first capping layer. The method further includes forming a patterned dielectric layer over the mask structure, the patterned dielectric layer exposing a portion of the mask structure; removing the exposed portion of the mask structure and a portion of the first dielectric layer underlying the exposed portion of the mask structure, thereby forming a recess exposing a source/drain region adjacent to the first gate structure; and filling the recess with a conductive material.

Abstract: Disclosed is a grinding disk kit for finishing rolling surfaces of bearing rollers, including a pair of coaxial first and second grinding disks; a front face of the first grinding disk includes a group of radially distributed linear grooves and transition faces for connecting the adjacent linear grooves; a front face of the second grinding disk includes one or more helical grooves and transition faces for connecting adjacent helical grooves; one bearing roller to be machined is distributed in each linear groove corresponding to each intersection of the helical grooves and the linear grooves during grinding machining; the rolling surfaces of the bearing rollers to be machined are respectively in contact with working faces of the linear grooves and the helical grooves corresponding to each intersection; and the bearing rollers to be machined translate along the linear grooves while rotating about the own axes under the friction.

Abstract: A polishing platform of a polishing apparatus includes a platen, a polishing pad, and an electric field element disposed between the platen and the polishing pad. The polishing apparatus further includes a controller configured to apply voltages to the electric field element. A first voltage is applied to the electric field element to attract charged particles of a polishing slurry toward the polishing pad. The attracted particles reduce overall topographic variation of a polishing surface presented to a workpiece for polishing. A second voltage is applied to the electric field element to attract additional charged particles of the polishing slurry toward the polishing pad. The additional attracted particles further reduce overall topographic variation of the polishing surface presented to the workpiece. A third voltage is applied to the electric field element to repel charged particles of the polishing slurry away from the polishing pad for improved cleaning thereof.

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: In one embodiment, in addition to detecting or recognizing an actual lane, a virtual lane is determined based on the current state or motion prediction of an ADV. A virtual lane may or may not be identical or similar to the actual lane. A virtual lane may represent the likely movement of the ADV in a next time period given the current speed and heading direction of the vehicle. If an object is detected that may cross a lane line of the virtual lane and is a closest object to the ADV, the object is considered as a CIPO, and an emergency operation may be activated. That is, even though an object may not be in the path of an actual lane, if the object is in the path of a virtual lane of an ADV, the object may be considered as a CIPO and subject to a special operation.

Abstract: A device may include a fabric die coupled to an active interposer. The fabric die may include programmable logic fabric and configuration memory that programs the programmable logic fabric. The programmable logic fabric of the fabric die may access at least a portion of the active interposer to perform an operation. As discussed herein, different power management techniques associated with the active interposer may be used to improve operation of the device.

Abstract: In response to a first image captured by a camera of an ADV, a horizon line is determined based on the camera's hardware settings, representing a vanishing point based on an initial or default pitch angle of the camera. One or more lane lines are determined based on the first image via a perception process performed on the first image. In response to a first input signal received from an input device, a position of the horizon line is updated based on the first input signal and a position of at least one of the lane lines is updated based on the updated horizon line. The input signal may represent an incremental adjustment for adjusting the position of the horizon line. A first calibration factor or first correction value is determined for calibrating a pitch angle of the camera based on a difference between the initial horizon line and the updated horizon line.

Abstract: An electronic system includes first, second, third, and fourth integrated circuit dies. The third integrated circuit die has a first voltage regulator circuit. A supply voltage output of the first voltage regulator circuit is coupled to provide a first supply voltage to a supply voltage input of the first integrated circuit die. The first voltage regulator circuit generates a first power ready signal that indicates when the first supply voltage has reached a first threshold voltage. The fourth integrated circuit die has a second voltage regulator circuit that generates a second supply voltage in response to the first power ready signal. A supply voltage output of the second voltage regulator circuit is coupled to provide the second supply voltage to a supply voltage input of the second integrated circuit die.

Abstract: A list of images is received. The images were captured by a sensor of an ADV chronologically while driving through a driving environment. A first image of the images is identified that includes a first object in a first dimension (e.g., larger size) detected by an object detector using an object detection algorithm. In response to the detection of the first object, the images in the list are traversed backwardly in time from the first image to identify a second image that includes a second object in a second dimension (e.g., smaller size) based on a moving trail of the ADV represented by the list of images. The second object is then labeled or annotated in the second image equivalent to the first object in the first image. The list of images having the labeled second image can be utilized for subsequent object detection during autonomous driving.

Abstract: In one embodiment, in addition to detecting or recognizing an actual lane, a virtual lane is determined based on the current state or motion prediction of an ADV. A virtual lane may or may not be identical or similar to the actual lane. A virtual lane may represent the likely movement of the ADV in a next time period given the current speed and heading direction of the vehicle. If an object is detected that may cross a lane line of the virtual lane and is a closest object to the ADV, the object is considered as a CIPO, and an emergency operation may be activated. That is, even though an object may not be in the path of an actual lane, if the object is in the path of a virtual lane of an ADV, the object may be considered as a CIPO and subject to a special operation.

Abstract: During the autonomous driving, the movement trails or moving history of obstacles, as well as, an autonomous driving vehicle (ADV) may be maintained in a corresponding buffer. For each of the obstacles or objects and the ADV, the vehicle states at different points in time are maintained and stored in one or more buffers. The vehicle states representing the moving trails or moving history of the obstacles and the ADV may be utilized to reconstruct a history trajectory of the obstacles and the ADV, which may be used for a variety of purposes. For example, the moving trails or history of obstacles may be utilized to determine lane configuration of one or more lanes of a road, particularly, in a rural area where the lane markings are unclear. The moving history of the obstacles may also be utilized predict the future movement of the obstacles, tailgate an obstacle, and infer a lane line.