Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

Abstract: In-situ defect count detection in post chemical mechanical polishing (post-CMP) is provided. Post-CMP is performed, in-situ and according to a recipe, on a surface of a semiconductor wafer within a post-CMP chamber. A light signal is scanned over a target area of the surface of the semiconductor wafer and a reflected light signal reflected from the target area is detected. A defect count of defects present in the target area is determined based on the reflected light signal reflected from the target area.

Abstract: The present disclosure discloses a method for execution of a computational graph in a neural network model and an apparatus thereof, including: creating task execution bodies on a native machine according to a physical computational graph compiled and generated by a deep learning framework, and designing a solution for allocating a plurality of idle memory blocks to each task execution body, so that the entire computational graph participates in deep learning training tasks of different batches of data in a pipelining and parallelizing manner.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: A method includes forming a first gate structure over a substrate, where the first gate structure is surrounded by a first dielectric layer; and forming a mask structure over the first gate structure and over the first dielectric layer, where forming the mask structure includes selectively forming a first capping layer over an upper surface of the first gate structure; and forming a second dielectric layer around the first capping layer. The method further includes forming a patterned dielectric layer over the mask structure, the patterned dielectric layer exposing a portion of the mask structure; removing the exposed portion of the mask structure and a portion of the first dielectric layer underlying the exposed portion of the mask structure, thereby forming a recess exposing a source/drain region adjacent to the first gate structure; and filling the recess with a conductive material.

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

Abstract: A list of images is received. The images were captured by a sensor of an ADV chronologically while driving through a driving environment. A first image of the images is identified that includes a first object in a first dimension (e.g., larger size) detected by an object detector using an object detection algorithm. In response to the detection of the first object, the images in the list are traversed backwardly in time from the first image to identify a second image that includes a second object in a second dimension (e.g., smaller size) based on a moving trail of the ADV represented by the list of images. The second object is then labeled or annotated in the second image equivalent to the first object in the first image. The list of images having the labeled second image can be utilized for subsequent object detection during autonomous driving.

Abstract: Provided are a processing method, a terminal device, and a medium. The method includes the steps described below. Basic information of a target video is determined; attribute information of the target video is determined based on the basic information; in a case where the attribute information indicates that the target video is a video capable of being structured, chapter division is performed on the target video based on the basic information to obtain at least two video clips; and chapter description information of the at least two video clips, a key frame of the at least two video clips and video description information of the target video are determined.

Abstract: Disclosed are a pedestrian re-identification method and apparatus based on local feature attention. The method includes the following steps: S1: obtaining an original surveillance video image data set, and dividing the original surveillance video image data set into a training set and a test set in proportion; and S2: performing image enhancement on the original surveillance video image training set to obtain enhanced images, and converting the enhanced images into sequence data.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: During the autonomous driving, the movement trails or moving history of obstacles, as well as, an autonomous driving vehicle (ADV) may be maintained in a corresponding buffer. For the obstacles and the ADV, the vehicle states at different points in time are maintained and stored in one or more buffers. The vehicle states representing the moving trails or moving history of the obstacles and the ADV may be utilized to reconstruct a history trajectory of the obstacles and the ADV, which may be used for a variety of purposes. For example, the moving trails or history of obstacles may be utilized to determine lane configuration of one or more lanes of a road, particularly, in a rural area where the lane markings are unclear. The moving history of the obstacles may also be utilized predict the future movement of the obstacles, tailgate an obstacle, and infer a lane line.

Abstract: A grinding tool kit, apparatus and method for finish machining of a rolling surface of a bearing roller. The apparatus comprises a main machine, an external circulation system, a grinding tool kit and a grinding tool kit clamp. A configuration of the main machine comprise a grinding strip assembly rotary type and a grinding sleeve rotary type. The external circulation system comprises a collection unit (41), a sorting unit (42), a feeding unit (43) and a transmission subsystem. The grinding tool kit comprises a grinding sleeve (21) remaining coaxial during working, and a grinding strip assembly penetrating through the grinding sleeve (21), an inner surface of the grinding sleeve (21) is provided with a first spiral groove (211); and the grinding strip assembly comprises a plurality of grinding strips (22), front surfaces of which are provided with linear grooves (221) or second spiral grooves distributed in a circumferential columnar array.

Abstract: A terminal device sends first information to a cloud device, where the first information indicates a posture and a location of the terminal device at a first moment. Then, the terminal device receives information about a first field of view image from the cloud device, where the first field of view image is a field of view image corresponding to the posture and the location of the terminal device at the first moment. The terminal device displays an image within a field of view range of the terminal device at a second moment based on the information about the first field of view image and a posture change and a location change of the terminal device from the first moment to the second moment.

Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

Abstract: The present disclosure provides a wet chemical heating system and a method of transporting wet chemical. The method includes providing a wet chemical in a conduit, heating the wet chemical by a first radiative heating unit at a first portion of the conduit, including elevating a temperature of the wet chemical at the first portion of the conduit to a first temperature greater than a second temperature of the first portion of the conduit; and dispensing the wet chemical from the conduit.

Abstract: Disclosed are a labeling method and apparatus for named entity recognition of a legal instrument. The method includes steps: step S1: acquiring a legal text, and transforming the legal text into an index table; step S2: outputting a sentence feature encoding result; step S3: performing training and prediction; step S4: obtaining a set; step S5: obtaining a multi-head score transfer matrix; step S6: obtaining a score transfer matrix corresponding to the legal text; step S7: determining a recognized nested entity; and S8: constructing an entity labeling template by using the recognized nested entity. According to the present disclosure, a user tries to complete recognition of nested entity labeling by changing an input of the BERT model, and a multi-head selection matrix labeling thought of the present disclosure is used to relieve the difficulty in recognizing a long text and a nested entity in an NER task to a larger extent.

Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Abstract: A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.