Abstract: A tool includes a housing, a drive assembly including an output shaft extending from the housing such that a tool element for performing work on a workpiece is attachable to the output shaft, and a bushing disposed within the housing. The bushing rotatably supports the output shaft. The bushing is impregnated with lubricant such that the bushing is self-lubricating, and the bushing has an impregnation ratio between about 5% and about 25%.

Abstract: Methods, systems, and devices for determining offsets for memory read operations are described. In response to a threshold quantity of pages failing initial reads but being successfully read using a same reference adjustment during re-reads, the offset responsible for the adjustment may be used as a first-applied offset for subsequent re-reads or a baseline offset for subsequent initial reads. After the initial reads begin using the reference adjustment, if a threshold quantity of pages fail initial reads, the offset used for the initial read may be adjusted to be the offset used to perform the successful re-reads. If an updated offset to use a baseline is not identified, the baseline offset may be cleared so the original reference may again be used without adjustment for initial reads.

Abstract: A glass fiber filter element for visible light photocatalysis and air purification and a method for preparing the same. The glass fiber filter element includes 4 to 7 wt % of nanoparticles including at least one selected from zinc oxide, graphene oxide, titanium oxide, and reduced graphene oxide, 2 to 7 wt % of silver nanowires, 3 to 12 wt % of an adhesive system, and 78 to 91 wt % of a glass fiber mat, based on the total weight of the glass fiber filter element. The glass fiber mat is made of at least two glass fibers with different diameters, and the diameters are in a range of 0.15 to 3.5 ?m. The nanoparticles have a particle size from 1 to 200 nm, and the silver nanowires have a diameter of 15 to 50 nm.

Abstract: A system comprises a memory device including a plurality of management units and a processing device. The processing device is operatively coupled with the memory device and configured to place the plurality of management units into a first protective state by erasing the plurality of management units, identify a cursor satisfying a cursor definition, identify a subset of the plurality of management units based on a location, on the memory device, referenced by the cursor, and place a selected management unit of the subset of the plurality of management units into a second protective state by programming a protective data pattern to the selected management unit.

Abstract: A memory device includes a memory array and control logic operatively coupled with the memory array to perform operations including maintaining a set of bins, each bin of the set of bins defining a respective grouping of memory arrays based on elapsed time since programming, wherein each bin of the set of bins is assigned a respective read level offset to achieve a bit error rate satisfying a threshold condition for an error correction decoder throughput specification, receiving a request to perform a read operation addressing the memory array, and causing the read operation to be performed based on the set of bins.

Abstract: A method includes, in response to detecting a power on event, selecting a block from a set of blocks, causing a first scan to be performed using a set of read level offsets to select, from a set of bins in accordance with a scan order, a first bin assigned with a first read level offset resulting in a first bit error metric value, in response to determining that the first bin is not an initial bin of the scan order, causing, using a second read level offset assigned to a second bin, a second scan to be performed to obtain a second bit error metric value, wherein the second bin immediately precedes the first bin in the scan order, and selecting, based on first bit error metric value and the second bit error metric value, an optimal bin from the set of bins.

Abstract: Described are systems and methods related to a memory block erase protocol. An example system includes a memory device having a memory array including a plurality of memory cells. The system further includes a processing device coupled to the memory device. The processing device is to determine a value of a metric associated with the memory array. Responsive to determine that the value of the metric is below a predetermined threshold, the processing device is further to initiate an erase protocol of the memory device. The processing device is further to erase sets of memory cells associated with one or more memory blocks of the memory array. The processing device is further to receive a programming command directed to the first set of memory cells. The processing device is further to perform a programming operation with respect to a set of memory cells responsive to receiving the programming command.

Abstract: Methods, systems, and devices for reference voltage adjustment for word line groups are described. In some examples, one or more components of a memory system may determine a duration that data has been stored to one or more memory cells. Based on the duration, a voltage value of one or more reference voltages may be adjusted accordingly. For example, a voltage value of one or more reference voltages may be adjusted based on the duration. Moreover, the reference voltage values may be adjusted differently in response to the memory cells having stored data for a relatively longer duration, as opposed to memory cells that have stored data for a relatively shorter duration. The adjusted reference voltages may be used during a subsequent read operation. The voltage value of the one or more reference voltages may be adjusted on a word-line group by word-line group basis.

Abstract: An impact tool includes a housing, a motor supported within the housing and having a motor shaft, a drive assembly configured to convert a continuous rotational input from the motor shaft to consecutive rotational impacts upon a workpiece, the drive assembly including a camshaft having a front portion and a rear portion defining a carrier, the rear portion being closer to the motor than the front portion, a thrust bearing engageable with the rear portion of the camshaft, and a gear assembly coupled between the motor shaft and the drive assembly. The gear assembly includes a ring gear and a plurality of planet gears meshed with the ring gear. Each of the plurality of planet gears is coupled to the carrier of the camshaft, and the ring gear rotationally and radially supports the rear portion of the camshaft via the plurality of planet gears.

Abstract: A method includes determining respective memory access counts of a plurality of blocks of non-volatile memory cells that are grouped into a plurality of respective groups, comparing the respective memory access counts to respective memory access thresholds, determining a respective memory access count of a block of non-volatile memory cells exceeds a respective memory access threshold, and performing a media scan operation on the block of non-volatile memory cells.

Abstract: A CD70 antibody and a chimeric antigen receptor (CAR) that can specifically bind to a CD70 protein. The CAR comprises a CD70 binding domain, a transmembrane domain, a costimulatory domain, and an intracellular signaling domain. Further disclosed is an application of the antibody and the CAR for treating diseases or conditions related to CD70 expression.

Abstract: An impact tool includes a housing, an electric motor supported within the housing and having a motor shaft, and a drive assembly configured to convert a continuous rotational input from the motor shaft to consecutive rotational impacts upon a workpiece. The drive assembly includes a camshaft having front and rear portions. A gear assembly is coupled between the motor shaft and the drive assembly, the gear assembly including a ring gear that is rotationally and radially fixed relative to the housing and a plurality of planet gears meshed with the ring gear. Each of the plurality of planet gears is coupled to the rear portion of the camshaft, and a line of action of a radial load exerted by the rear portion of the camshaft on the housing passes through one of the plurality of planet gears and the ring gear.

Abstract: An LED bulb includes a center ring, a burner and an elastic component. The center ring includes a central opening, a first flat rim extending along a first part of an outer edge of the central opening, and a first notch cut-out beyond the central opening at an end of the first flat rim. The burner is disposed at least in part in the central opening and includes a first pin that has a first flat side face. The elastic component is configured to press the first flat rim of the center ring against the first flat side face of the first pin of the burner.

Abstract: A method includes determining one or more quality attributes for memory cells of a memory device, receiving a memory access request involving data written to at least a portion of the memory cells, and determining whether the memory access request corresponds to a random read operation or a sequential read operation. The method further includes responsive to determining that the memory access request corresponds to a random read operation or responsive to determining that the one or more quality attributes for memory cells are greater than a threshold quality level, or both, selecting a read mode for use in performance of the random read operation and performing the random read operation using the selected read mode.

Abstract: Provided is a bispecific chimeric antigen receptor targeting CD19 and CD22, which comprises extracellular antigen binding domains of heavy-chain variable regions and light-chain variable regions of anti-CD19 and anti-CD22 antibodies. Further provided is a bispecific CAR-T cell targeting CD19 and CD22.

Abstract: Methods, systems, and devices for reference voltage adjustment for word line groups are described. In some examples, one or more components of a memory system may determine a duration that data has been stored to one or more memory cells. Based on the duration, a voltage value of one or more reference voltages may be adjusted accordingly. For example, a voltage value of one or more reference voltages may be adjusted based on the duration. Moreover, the reference voltage values may be adjusted differently in response to the memory cells having stored data for a relatively longer duration, as opposed to memory cells that have stored data for a relatively shorter duration. The adjusted reference voltages may be used during a subsequent read operation. The voltage value of the one or more reference voltages may be adjusted on a word-line group by word-line group basis.

Abstract: A method includes performing a first read operation involving a set of memory cells using a first voltage, determining a quantity of bits associated with the set of memory cells based on the first read operation, performing a second read operation involving the set of memory cells using a second voltage that is greater than the first voltage when the quantity of bits is above a threshold quantity of bits for the set of memory cells, and performing the second read operation involving the set of memory cells using a third voltage that is less than the first voltage when the quantity of bits is below the threshold quantity of bits for the set of memory cells.