Abstract: The present technology relates generally to compounds, compositions, and methods useful for treating, preventing, and/or ameliorating pathogenic cellular proliferation, angiogenesis, cancer, metastatic disease, and/or a pathogenic vascular proliferative disease in a subject.

Abstract: Disclosed herein are compounds and methods for the inhibition of the RNF1 or RNF2 subunit of polycomb repressive complex 1 (PRC1) for the treatment of metastatic cancer, such as metastatic castration-resistant prostate cancer. The inhibitors can be combined with checkpoint inhibitors such as PD-1 inhibitors, PD-L 1 inhibitors, or CTLA-4 inhibitors.

Abstract: An antenna module and a terminal applying the antenna module are disclosed. The antenna module includes an antenna array configured with a plurality of antenna units and a radio-frequency phase shifting system. The antenna array and the radio-frequency phase shifting system are integrated on a circuit substrate to form an independent module. Further, the antenna unit of the antenna module may adopt a solution of a microstrip patch antenna structure loading a short-circuit pillar to generate multiple resonances, thereby expanding the bandwidth of the antenna unit. After the antenna array is formed, the antenna modules may be further arranged perpendicular to each other to expand and achieve large-angle scanning and polarization diversity functions. The disclosed antenna module has a simplified structure and may be applied to 5G communication. It has the advantages of easy system integration, low-profile miniaturization, wide radiation bandwidth, and large-angle scanning.

Abstract: Described herein are phenylsulfonamido-benzofuran derivatives, and pharmaceutically acceptable salts thereof. Also provided are pharmaceutical compositions, methods, uses, and kits involving compounds of Formulae (I), (II), (III), (IV), (V), or (VI) for treating and/or preventing proliferative diseases (e.g. cancers, inflammatory diseases, and autoimmune diseases) in a subject. The compounds and pharmaceutical compositions as described herein inhibit at least one protein of the BCL-2 family in a biological sample or subject to treat and/or prevent a proliferative disease. In certain embodiments, compounds described herein are selective inhibitors of MCL-1, a BCL-2 family member protein.

Abstract: Disclosed is a multi-band antenna architecture, provided in a matrix of a wireless communication device, including: a first antenna, typically an LTE antenna, located in left outer side and right outer side areas of the matrix, a second antenna, typically a Sub-6 GHz MIMO antenna, located in upper outer side and lower outer side areas of the matrix, and a third antenna, typically a millimeter-wave antenna, located in left inner side and right inner side areas of the matrix. The above-mentioned areas are spaced from each other. The first antenna, the second antenna, and the third antenna work at different frequency bands. The third antenna can implement broadband and large-angle beam scanning.

Abstract: Described herein are phenylsulfonamido-benzofuran derivatives, and pharmaceutically acceptable salts thereof. Also provided are pharmaceutical compositions, methods, uses, and kits involving compounds of Formulae (I), (II), (III), (IV), (V), or (VI) for treating and/or preventing proliferative diseases (e.g. cancers, inflammatory diseases, and autoimmune diseases) in a subject. The compounds and pharmaceutical compositions as described herein inhibit at least one protein of the BCL-2 family in a biological sample or subject to treat and/or prevent a proliferative disease. In certain embodiments, compounds described herein are selective inhibitors of MCL-1, a BCL-2 family member protein.

Abstract: An antenna module and a terminal applying the antenna module are disclosed. The antenna module includes an antenna array configured with a plurality of antenna units and a radio-frequency phase shifting system. The antenna array and the radio-frequency phase shifting system are integrated on a circuit substrate to form an independent module. Further, the antenna unit of the antenna module may adopt a solution of a microstrip patch antenna structure loading a short-circuit pillar to generate multiple resonances, thereby expanding the bandwidth of the antenna unit. After the antenna array is formed, the antenna modules may be further arranged perpendicular to each other to expand and achieve large-angle scanning and polarization diversity functions. The disclosed antenna module has a simplified structure and may be applied to 5G communication. It has the advantages of easy system integration, low-profile miniaturization, wide radiation bandwidth, and large-angle scanning.

Abstract: Disclosed is a multi-band antenna architecture, provided in a matrix of a wireless communication device, including: a first antenna, typically an LTE antenna, located in left outer side and right outer side areas of the matrix, a second antenna, typically a Sub-6 GHz MIMO antenna, located in upper outer side and lower outer side areas of the matrix, and a third antenna, typically a millimeter-wave antenna, located in left inner side and right inner side areas of the matrix. The above-mentioned areas are spaced from each other. The first antenna, the second antenna, and the third antenna work at different frequency bands. The third antenna can implement broadband and large-angle beam scanning.

Abstract: A semiconductor device may include the following elements: a first doped portion; a second doped portion; an enclosing member, which encloses both the first doped portion and the second doped portion; a first barrier, which directly contacts the first doped portion; a second barrier, which directly contacts the second doped portion; a dielectric member, which is positioned between the first barrier and the second barrier and directly contacts each of the first barrier and the second barrier; a third barrier, which directly contacts the first doped portion; and a device component, wherein a portion of the device component is positioned between the dielectric member and the third barrier.

Abstract: Described herein are phenylsulfonamido-benzofuran derivatives, and pharmaceutically acceptable salts thereof. Also provided are pharmaceutical compositions, methods, uses, and kits involving compounds of Formulae (I), (II), (III), (IV), (V), or (VI) for treating and/or preventing proliferative diseases (e.g. cancers, inflammatory diseases, and autoimmune diseases) in a subject. The compounds and pharmaceutical compositions as described herein inhibit at least one protein of the BCL-2 family in a biological sample or subject to treat and/or prevent a proliferative disease. In certain embodiments, compounds described herein are selective inhibitors of MCL-1, a BCL-2 family member protein.

Abstract: Described herein are phenylsulfonamido-benzofuran derivatives, and pharmaceutically acceptable salts thereof. Also provided are pharmaceutical compositions, methods, uses, and kits involving compounds of Formulae (I), (II), (III), (IV), (V), or (VI) for treating and/or preventing proliferative diseases (e.g. cancers, inflammatory diseases, and autoimmune diseases) in a subject. The compounds and pharmaceutical compositions as described herein inhibit at least one protein of the BCL-2 family in a biological sample or subject to treat and/or prevent a proliferative disease. In certain embodiments, compounds described herein are selective inhibitors of MCL-1, a BCL-2 family member protein.

Abstract: A semiconductor device may include the following elements: a first doped portion; a second doped portion; an enclosing member, which encloses both the first doped portion and the second doped portion; a first barrier, which directly contacts the first doped portion; a second barrier, which directly contacts the second doped portion; a dielectric member, which is positioned between the first barrier and the second barrier and directly contacts each of the first barrier and the second barrier; a third barrier, which directly contacts the first doped portion; and a device component, wherein a portion of the device component is positioned between the dielectric member and the third barrier.

Abstract: A semiconductor device may include the following elements: a first doped portion; a second doped portion; an enclosing member, which encloses both the first doped portion and the second doped portion; a first barrier, which directly contacts the first doped portion; a second barrier, which directly contacts the second doped portion; a dielectric member, which is positioned between the first barrier and the second barrier and directly contacts each of the first barrier and the second barrier; a third barrier, which directly contacts the first doped portion; and a device component, wherein a portion of the device component is positioned between the dielectric member and the third barrier.

Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a semiconductor substrate; forming a first active region, a second active region, a third active region, and a fourth active region in the semiconductor substrate; and forming a middle-voltage P well region (MVPW) in each of the first active region and the second region simultaneously and forming a middle-voltage N well (MVNW) region in each of the third active region and the fourth active region simultaneously.

Abstract: A method for forming a semiconductor device includes forming a buried doped layer in a semiconductor substrate and forming a plurality of first trenches that expose the buried doped layer. A first dielectric layer is formed covering sidewalls of the first trenches, and a doped polysilicon layer is formed covering side surfaces of the first dielectric layer and bottom portions of the first trenches. The method also includes forming a second trench in each of the plurality of first trenches, and each second trench extending through a bottom portion of the doped polysilicon layer and the buried doped layer into a lower portion of the substrate. The method also includes forming a second dielectric layer inside each second trench. An isolation pocket structure is formed that includes the doped buried layer at the bottom and sidewalls that includes the doped polysilicon layer sandwiched between the first and second dielectric layers.

Abstract: A method for forming a semiconductor device includes forming a buried doped layer in a semiconductor substrate and forming a plurality of first trenches that expose the buried doped layer. A first dielectric layer is formed covering sidewalls of the first trenches, and a doped polysilicon layer is formed covering side surfaces of the first dielectric layer and bottom portions of the first trenches. The method also includes forming a second trench in each of the plurality of first trenches, and each second trench extending through a bottom portion of the doped polysilicon layer and the buried doped layer into a lower portion of the substrate. The method also includes forming a second dielectric layer inside each second trench. An isolation pocket structure is formed that includes the doped buried layer at the bottom and sidewalls that includes the doped polysilicon layer sandwiched between the first and second dielectric layers.

Abstract: A semiconductor device and method of fabricating the semiconductor device are disclosed. The method includes forming a plurality of gate electrodes at a predetermined interval on a surface of a semiconductor substrate, forming spacers on sidewalls of the gate electrodes, depositing an interconnection layer conformally on the surface of the semiconductor substrate over the gate electrodes and the spacers, selectively etching the interconnection layer, wherein at least a portion of the interconnection layer that is formed on the surface of the semiconductor substrate and sidewalls of the spacers and located between adjacent gate electrodes remains after the selective etch, and forming an electrical contact on the etched interconnection layer located between the adjacent gate electrodes.

Abstract: A method for forming a semiconductor device includes forming a buried doped layer in a semiconductor substrate and forming a plurality of first trenches that expose the buried doped layer. A first dielectric layer is formed covering sidewalls of the first trenches, and a doped polysilicon layer is formed covering side surfaces of the first dielectric layer and bottom portions of the first trenches. The method also includes forming a second trench in each of the plurality of first trenches, each second trench extending through a bottom portion of the doped polysilicon layer and the buried doped layer into a lower portion of the substrate. The method also includes forming a second dielectric layer inside each second trench. An isolation pocket structure is formed that includes the doped buried layer at the bottom and sidewalls that includes the doped polysilicon layer sandwiched between the first and second dielectric layers.

Abstract: The present invention provides compounds, pharmaceutically acceptable compositions thereof, and methods of using the same.

Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a semiconductor substrate; forming a first active region, a second active region, a third active region, and a fourth active region in the semiconductor substrate; and forming a middle-voltage P well region (MVPW) in each of the first active region and the second region simultaneously and forming a middle-voltage N well (MVNW) region in each of the third active region and the fourth active region simultaneously.