Abstract: A semiconductor device and its manufacturing method, relating to semiconductor techniques. The semiconductor device manufacturing method comprises: forming a patterned first hard mask layer on a substrate to define a position for buried layers; conducting a first ion implantation using the first hard mask layer as a mask to form a first buried layer and a second buried layer both having a first conductive type and separated from each other at two sides of the first hard mask layer in the substrate; conducting a second ion implantation to form a separation region with a second conductive type opposite to the first conductive type in the substrate between the first and the second buried layers; removing the first hard mask layer; and forming a semiconductor layer on the substrate. This inventive concept reduces an area budget of a substrate and simplifies the manufacturing process.

Abstract: A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Abstract: The present disclosure provides a driving circuit and a liquid crystal display panel, including an input module, a first control module, a second control module, a third control module, an output module and a reset module, which can simplify structure of the driving circuit while ensuring the liquid crystal display panel works well.

Abstract: The present disclosure provides a method and for acquiring text data of a trademark image, a computer device and a non-transitory computer readable storage medium. The method includes the followings. A trademark database including one or more mappings among trademark feature information, trademark description information and trademark text information is established. A to-be-processed image including image description information is acquired. Trademark feature information corresponding to the to-be-processed image is determined. The trademark text information corresponding to the trademark feature information as the text data of the trademark image corresponding to the to-be-processed image according to the one or more mappings in the trademark database when the trademark description information corresponding to the trademark feature information corresponding to the to-be-processed image is contained in the image description information corresponding to the to-be-processed image.

Abstract: A closed-loop cooling ship propulsion apparatus includes a power device, a pump, and a coolant supply. A fluid circuit is formed in the ship propulsion apparatus and a coolant in the loop can be arranged to circulate through all heat-generating components in addition to the pump and motive power unit. A closed-loop circuit avoids the blockages and contamination which might occur if the water of a sea or lake was used directly.

Abstract: A stationary in-vivo grating-enabled micro-CT (computed tomography) architecture (SIGMA) system includes CT scanner control circuitry and a number of imaging chains. Each imaging chain includes an x-ray source array, a phase grating, an analyzer grating and a detector array. Each imaging chain is stationary and each x-ray source array includes a plurality of x-ray source elements. Each imaging chain has a centerline, the centerlines of the number of imaging chains intersect at a center point and a first angle between the centerlines of a first adjacent pair of imaging chains equals a second angle between the centerlines of a second adjacent pair of imaging chains. A plurality of selected x-ray source elements of a first x-ray source array is configured to emit a plurality of x-ray beams in a multiplexing fashion.

Abstract: A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

Abstract: A semiconductor device and its manufacturing method, relating to semiconductor techniques. The semiconductor device manufacturing method comprises: forming a patterned first hard mask layer on a substrate to define a position for buried layers; conducting a first ion implantation using the first hard mask layer as a mask to form a first buried layer and a second buried layer both having a first conductive type and separated from each other at two sides of the first hard mask layer in the substrate; conducting a second ion implantation to form a separation region with a second conductive type opposite to the first conductive type in the substrate between the first and the second buried layers; removing the first hard mask layer; and forming a semiconductor layer on the substrate. This inventive concept reduces an area budget of a substrate and simplifies the manufacturing process.

Abstract: The flexible display panel includes an active area (AA), an outer lead bonding (OLB) area, and a number of driver chips working cooperatively in fulfilling the complete driving function to the AA. The AA and the OLB area are formed on a same flexible organic substrate. The multiple driver chips are disposed in the OLB area adjacent to the AA. The driver chips are arranged in a pattern as required. The flexible display panel of the present invention obviates the problem of driver IC limiting the bending of the flexible display panel, while fulfilling the display function and to a greater degree achieving the bending capability of the flexible display panel.

Abstract: A medical imaging system according to embodiment includes an ultrasonic probe, positioning circuitry, first mapping relationship estimation circuitry, repositioning circuitry and a display. The first mapping relationship estimation circuitry estimates a first mapping relationship between a position of the ultrasonic probe when a subject is in a first position state and a position of the ultrasonic probe when the subject is in a second position state. The repositioning circuitry determines a target position of a volume image corresponding to the position of the ultrasonic probe in the second position state according to the first mapping relationship and a second mapping relationship between the position of the ultrasonic probe in the first position state and the target position of the volume image of the subject. The display displays the image of the target position obtained from the volume image according to the target position of the volume image.

Abstract: A proximity sensing module with dual transmitters includes a circuit board, a package housing, a sensing assembly and a transmitter unit. The sensing assembly includes a sensor disposed on the circuit board. The transmitter unit is shielded from the sensing assembly through the package housing and includes a first transmitter and a second transmitter both disposed on the circuit board. One of the first transmitter and the second transmitter is closer to the sensing assembly.

Abstract: An infrared proximity sensor includes a substrate, an emitting unit, a receiving unit, a packaging unit and an isolating unit. The substrate has a supporting surface and the supporting surface has an emitting region and a receiving region corresponding in position to the emitting region. The emitting unit is disposed on the emitting region. The receiving unit is disposed on the receiving region. The packaging unit includes a first package body and a second package body. The first package body covers the emitting unit and the second package body covers the receiving unit. The isolating unit is disposed between the first package body and the second package body. The substrate has a first side and a second side, and the first side has a length less than 1.5 mm.

Abstract: Disclosed is a mixing and guniting device of a new type for a TBM, wherein the device comprises a concrete inlet pipe (1), a four-way pipe (15), a nozzle (4), an agitator motor (5), a longitudinal swing oil cylinder (6), a flow mixer, a lateral swing oil cylinder (16), a telescopic oil cylinder (7) connected to a big arm, and a controller, one end of the telescopic oil cylinder (7) being provided with a connection plate (12), the four-way pipe (15) being fixed on the upper part of the connecting plate (12), two interfaces in the upper part of the four-way pipe (15) being respectively provided with an air inlet pipe (2) and an accelerator inlet pipe, a measuring sensor connected to the controller being provided in the air inlet pipe (2), two interfaces in the lower part of the four-way pipe (15) being respectively provided with bent pipes (8), the other ends of the bent pipes (8) being in communication with the flow mixer, the nozzle (4) being provided in the upper part of the flow mixer, the concrete inlet pi

Abstract: A pixel driving circuit and organic light-emitting diode (OLED) display apparatus having the pixel driving circuit is provided. The pixel driving circuit with 6T1C pixel structure effectively compensates the threshold voltage of the driving transistor, which drives the OLED display apparatus, to prevent the current flows through the OLED from being correlated with the threshold voltage of the driving transistor, so that the poor display image caused due to the threshold voltage shifting of the driving transistor is eliminated.

Abstract: A system for generating a high resolution (HR) computed tomography (CT) image from a low resolution (LR) CT image is described. The system includes a first generative adversarial network (GAN) and a second GAN. The first GAN includes a first generative neural network (G) configured to receive a training LR image dataset and to generate a corresponding estimated HR image dataset, and a first discriminative neural network (DY) configured to compare a training HR image dataset and the estimated HR image dataset. The second GAN includes a second generative neural network (F) configured to receive the training HR image dataset and to generate a corresponding estimated LR image dataset, and a second discriminative neural network (DX) configured to compare the training LR image dataset and the estimated LR image dataset.

Abstract: A manufacturing method of wafer level sensing module includes: providing a chip substrate formed with a first receptor and a second receptor; disposing an emitter on the chip substrate; disposing a shielding assembly on the top surface of the chip substrate; and disposing a transparent shielding plate on the top surface of the chip substrate and in positional correspondence with the second receptor. The first lens is connected between the first shielding member and the second shielding member, and the emitter is arranged in a first space defined by the first shielding member, the first lens, the second shielding member, and the chip substrate. The second lens is connected between the second shielding member and the third shielding member, and the first receptor is arranged in a second space defined by the second shielding member, the second lens, the third shielding member, and the chip substrate.

Abstract: The instant disclosure provides a wafer level sensing module and a manufacturing method thereof. The wafer level sensing module includes a chip substrate, a proximity sensing unit, and an ambient light sensing unit. The proximity sensing unit is disposed on the chip substrate and includes an emitter, a first receptor, and a shielding assembly. The shielding assembly includes a first shielding member, a second shielding member, a third shielding member, a first lens, and a second lens. The ambient light sensing unit is disposed on the chip substrate and is separate from the proximity sensing unit. The ambient light sensing unit includes a second receptor and a transparent shielding plate. The first receptor and the second receptor are formed on the chip substrate and exposed from a top surface of the chip substrate, and the transparent shielding plate corresponds in position to the second receptor.

Abstract: A diffuser, an airflow generating apparatus, and an electrical device are provided. The airflow generating apparatus includes a motor; an impeller including blades with air passages formed therebetween; and a diffuser including diffusing vanes with diffusing channels formed therebetween. In a flow region defined between a terminating end of one diffusing vane and a starting end of another adjacent diffusing vane, an intersection line between a bottom of the diffusing channel between the two diffusing vanes and its circumferential section includes a front arcuate line segment and a subsequent straight line segment, the arcuate line segment extends curvedly, outwardly and downwardly from or from adjacent an inlet end of the diffusing channel, the straight line segment connects to the arcuate line segment and extends to an outlet end of the diffusing channel. The diffusing channel is designed to improve the operating efficiency of the airflow generating apparatus.

Abstract: A semiconductor device and its manufacturing method, relating to semiconductor techniques. The semiconductor device manufacturing method comprises: forming a patterned first hard mask layer on a substrate to define a position for buried layers; conducting a first ion implantation using the first hard mask layer as a mask to form a first buried layer and a second buried layer both having a first conductive type and separated from each other at two sides of the first hard mask layer in the substrate; conducting a second ion implantation to form a separation region with a second conductive type opposite to the first conductive type in the substrate between the first and the second buried layers; removing the first hard mask layer; and forming a semiconductor layer on the substrate. This inventive concept reduces an area budget of a substrate and simplifies the manufacturing process.