Abstract: Shaped porous carbon products and processes for preparing these products are provided. The shaped porous carbon products can be used, for example, as catalyst supports and adsorbents. Catalyst compositions including these shaped porous carbon products, processes of preparing the catalyst compositions, and various processes of using the shaped porous carbon products and catalyst compositions are also provided.

Abstract: A method for forming a semiconductor device includes forming a first insulator layer on a first substrate of a first semiconductor material, implanting hydrogen ions into the first substrate to form a hydrogen-implanted layer, forming a recessed region in the first substrate, forming a second semiconductor material in the recessed region, and forming a second insulator layer over the second semiconductor material and the first substrate. The method also includes providing a second substrate with a third insulator layer disposed thereon, bonding the first substrate with the second substrate, and removing a lower portion of the first substrate at the hydrogen-implanted layer. A portion of the first substrate is removed to expose a surface of the second semiconductor material in the recessed region, thereby providing a layer of the first semiconductor material adjacent to a layer of the second semiconductor material on the second insulator layer.

Abstract: The present disclosure provides processes for the production of 2-5-furandicarboxylic acid (FDCA) and intermediates thereof by the chemocatalytic conversion of a furanic oxidation substrate. The present disclosure further provides processes for preparing derivatives of FDCA and FDCA-based polymers. In addition, the present disclosure provides crystalline preparations of FDCA, as well as processes for making the same.

Abstract: A triboelectric generator includes a first contact charging member and a second contact charging member. The first contact charging member includes a first contact layer and a conductive electrode layer. The first contact layer includes a material that has a triboelectric series rating indicating a propensity to gain electrons due to a contacting event. The conductive electrode layer is disposed along the back side of the contact layer. The second contact charging member is spaced apart from and disposed oppositely from the first contact charging member. It includes an electrically conductive material layer that has a triboelectric series rating indicating a propensity to lose electrons when contacted by the first contact layer during the contacting event. The electrically conductive material acts as an electrode. A mechanism maintains a space between the first contact charging member and the second contact charging member except when a force is applied thereto.

Abstract: A method for manufacturing an interconnect structure includes providing a substrate structure including a substrate and a dielectric layer on the substrate, the dielectric layer having an opening extending to the substrate. The method further includes forming a mask layer on at least one portion of the dielectric layer, forming a metal layer filling the opening and covering portions of dielectric layer not covered by the mask layer, removing the mask layer, and planarizing the metal layer so that an upper surface of a remaining portion of the metal layer is flush with an upper surface of the dielectric layer. The method can mitigate the warping problems of the substrate associated with the fabrication of the interconnect structure.

Abstract: A method for forming a semiconductor device includes forming a first insulator layer on a first substrate of a first semiconductor material, implanting hydrogen ions into the first substrate to form a hydrogen-implanted layer, forming a recessed region in the first substrate, forming a second semiconductor material in the recessed region, and forming a second insulator layer over the second semiconductor material and the first substrate. The method also includes providing a second substrate with a third insulator layer disposed thereon, bonding the first substrate with the second substrate, and removing a lower portion of the first substrate at the hydrogen-implanted layer. A portion of the first substrate is removed to expose a surface of the second semiconductor material in the recessed region, thereby providing a layer of the first semiconductor material adjacent to a layer of the second semiconductor material on the second insulator layer.

Abstract: The present disclosure provides processes for the production of 2-5-furandicarboxylic acid (FDCA) and intermediates thereof by the chemocatalytic conversion of a furanic oxidation substrate. The present disclosure further provides processes for preparing derivatives of FDCA and FDCA-based polymers. In addition, the present disclosure provides crystalline preparations of FDCA, as well as processes for making the same.

Abstract: The present disclosure provides a method for forming a transistor, including: forming a base structure, containing a first gate structure, an active layer covering the first gate structure, and an insulating structure in the active layer; forming a second gate structure on the active layer; forming a source-drain region, including a source region and a drain region in the active layer each on a different side of the second gate structure; and forming a first interlayer dielectric layer covering the base structure and the second gate structure. The method also includes: forming a first contact hole that exposes the first gate structure by etching the first interlayer dielectric layer and the insulating structure; and forming a second contact hole that exposes the second gate structure and a third contact hole that exposes the drain region by etching the first interlayer dielectric layer.

Abstract: Shaped porous carbon products and processes for preparing these products are provided. The shaped porous carbon products can be used, for example, as catalyst supports and adsorbents. Catalyst compositions including these shaped porous carbon products, processes of preparing the catalyst compositions, and various processes of using the shaped porous carbon products and catalyst compositions are also provided.

Abstract: Disclosed are catalysts comprised of platinum and gold. The catalysts are generally useful for the selective oxidation of compositions comprised of a primary alcohol group and at least one secondary alcohol group wherein at least the primary alcohol group is converted to a carboxyl group. More particularly, the catalysts are supported catalysts including particles comprising gold and particles comprising platinum, wherein the molar ratio of platinum to gold is in the range of about 100:1 to about 1:4, the platinum is essentially present as Pt(0) and the platinum-containing particles are of a size in the range of about 2 to about 50 nm. Also disclosed are methods for the oxidative chemocatalytic conversion of carbohydrates to carboxylic acids or derivatives thereof. Additionally, methods are disclosed for the selective oxidation of glucose to glucaric acid or derivatives thereof using catalysts comprising platinum and gold. Further, methods are disclosed for the production of such catalysts.

Abstract: Shaped porous carbon products and processes for preparing these products are provided. The shaped porous carbon products can be used, for example, as catalyst supports and adsorbents. Catalyst compositions including these shaped porous carbon products, processes of preparing the catalyst compositions, and various processes of using the shaped porous carbon products and catalyst compositions are also provided.

Abstract: A method for manufacturing an interconnect structure includes providing a substrate structure including a substrate and a first dielectric layer on the substrate and having an opening for a first interconnect layer extending to the substrate, forming a first mask layer on a portion of the first dielectric layer spaced apart from the opening, forming a first metal layer filling the opening and covering a portion of the first dielectric layer not covered by the first mask layer, removing the first mask layer, forming a second dielectric layer on the first dielectric layer and on the first metal layer and having a trench for a second interconnect layer, the trench exposing a portion of the first metal layer; and forming a second metal layer filling the trench and in contact with the exposed portion of the first metal layer.

Abstract: A method for manufacturing an interconnect structure includes providing a substrate structure including a substrate and a dielectric layer on the substrate, the dielectric layer having an opening extending to the substrate. The method further includes forming a mask layer on at least one portion of the dielectric layer, forming a metal layer filling the opening and covering portions of dielectric layer not covered by the mask layer, removing the mask layer, and planarizing the metal layer so that an upper surface of a remaining portion of the metal layer is flush with an upper surface of the dielectric layer. The method can mitigate the warping problems of the substrate associated with the fabrication of the interconnect structure.

Abstract: A generator includes a first member, a second member and a sliding mechanism. The first member includes a first electrode and a first dielectric layer affixed to the first electrode. The first dielectric layer includes a first material that has a first rating on a triboelectric series. The second member includes a second material that has a second rating on the triboelectric series that is different from the first rating. The second member includes a second electrode. The second member is disposed adjacent to the first dielectric layer so that the first dielectric layer is disposed between the first electrode and the second electrode. The sliding mechanism is configured to cause relative lateral movement between the first member and the second member, thereby generating an electric potential imbalance between the first electrode and the second electrode.

Abstract: A tactile sensor for sensing touch from a human finger includes a triboelectric layer and includes a material that becomes electrically charged after being in contact with the finger. The first side of a first conductive layer is in contact with the second side of triboelectric layer. The first side of a dielectric layer is in contact with the first conductive layer and the second side of the dielectric layer is in contact with a second conductive layer. When the triboelectric layer becomes electrically charged after being in contact with the finger, the first conductive layer and the second conductive layer are subjected to an electric field, which has a first field strength at the first conductive layer and a second field strength, different from the first field strength, at the second conductive layer. A plurality of tactile sensors can be arranged as a keyboard.

Abstract: A keyboard for converting keystrokes into electrical signals is disclosed. The keyboard includes a plurality of keys. At least one of the keys includes two electrodes and a member that generates triboelectric charges upon skin contact. The member is adjacent to one of the electrodes to affect a flow of electrons between the two electrodes when a distance between the member and the skin varies.

Abstract: A generator includes a first member, a second member and a sliding mechanism. The first member includes a first electrode and a first dielectric layer affixed to the first electrode. The first dielectric layer includes a first material that has a first rating on a triboelectric series. The second member includes a second material that has a second rating on the triboelectric series that is different from the first rating. The second member includes a second electrode. The second member is disposed adjacent to the first dielectric layer so that the first dielectric layer is disposed between the first electrode and the second electrode. The sliding mechanism is configured to cause relative movement between the first member and the second member, thereby generating an electric potential imbalance between the first electrode and the second electrode.

Abstract: The present disclosure provides an impulse generator and a generator set. The impulse generator comprises: a first substrate; a first conductive film layer on the first substrate; an insulation film layer on the first conductive film layer; a second substrate; a second conductive film layer on the second substrate; and an elastic connection body for connecting the first substrate with the second substrate such that the insulation film layer and the second conductive film layer face each other; wherein, when no external force is applied on the first substrate or the second substrate, the insulation film layer is separated from the second conductive film layer; and, when an external force is applied on the first substrate or the second substrate, the insulation film layer is contacted with the second conductive film layer such that, a surface charge transfer is generated by the contact between the insulation film and the second conductive film layer, owing to their difference in triboelectric series.

Abstract: A triboelectric generator includes a first contact charging member, a second contact charging member and an electrical load. The first contact charging member has a contact side and an opposite back side. The first contact charging member includes a material that has a first rating on a triboelectric series and also has a conductive aspect. The second contact charging member has a second rating on the triboelectric series, different from the first rating, and is configured to come into contact with the first contact layer and go out of contact with the first contact layer. The electrical load electrically is coupled to the first contact charging member and to a common voltage so that current will flow through the load after the second contact charging member comes into contact with the first contact charging member and then goes out of contact with the first contact charging member.

Abstract: Disclosed are catalysts comprised of platinum and gold. The catalysts are generally useful for the selective oxidation of compositions comprised of a primary alcohol group and at least one secondary alcohol group wherein at least the primary alcohol group is converted to a carboxyl group. More particularly, the catalysts are supported catalysts including particles comprising gold and particles comprising platinum, wherein the molar ratio of platinum to gold is in the range of about 100:1 to about 1:4, the platinum is essentially present as Pt(0) and the platinum-containing particles are of a size in the range of about 2 to about 50 nm. Also disclosed are methods for the oxidative chemocatalytic conversion of carbohydrates to carboxylic acids or derivatives thereof. Additionally, methods are disclosed for the selective oxidation of glucose to glucaric acid or derivatives thereof using catalysts comprising platinum and gold. Further, methods are disclosed for the production of such catalysts.