Patents by Inventor Guangbi Yuan
Guangbi Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240063015Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.Type: ApplicationFiled: November 3, 2023Publication date: February 22, 2024Inventors: Guangbi YUAN, Ieva NARKEVICIUTE, Bo GONG, Bhadri N. VARADARAJAN
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Patent number: 11848199Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.Type: GrantFiled: October 10, 2019Date of Patent: December 19, 2023Assignee: Lam Research CorporationInventors: Guangbi Yuan, Ieva Narkeviciute, Bo Gong, Bhadri N. Varadarajan
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Publication number: 20230383401Abstract: In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Fengyuan LAI, Bo GONG, Guangbi YUAN, Chen-Hua HSU, Bhadri VARADARAJAN
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Publication number: 20230314794Abstract: The disclosed method for recovering optical properties of transparent substrates may include performing a post-etching annealing process on a transparent substrate. The method may also include applying a plasma treatment to the transparent substrate, performing an atomic layer etching treatment on the transparent substrate, and/or performing a cleaning process. Various other methods, devices, and systems are also disclosed.Type: ApplicationFiled: January 26, 2023Publication date: October 5, 2023Inventors: Joshua Andrew Kaitz, Pasqual Rivera, Guangbi Yuan, Nihar Ranjan Mohanty, John Sporre, Vivek Gupta
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Publication number: 20230304156Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.Type: ApplicationFiled: June 1, 2023Publication date: September 28, 2023Inventors: Geoffrey HOHN, Huatan QIU, Rachel E. BATZER, Guangbi YUAN, Zhe GUI
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Patent number: 11761079Abstract: In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.Type: GrantFiled: December 6, 2018Date of Patent: September 19, 2023Assignee: Lam Research CorporationInventors: Fengyuan Lai, Bo Gong, Guangbi Yuan, Chen-Hua Hsu, Bhadri Varadarajan
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Patent number: 11702748Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.Type: GrantFiled: March 3, 2017Date of Patent: July 18, 2023Assignee: Lam Research CorporationInventors: Geoffrey Hohn, Huatan Qiu, Rachel Batzer, Guangbi Yuan, Zhe Gui
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Publication number: 20230002891Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: ApplicationFiled: September 7, 2022Publication date: January 5, 2023Inventors: Damodar Rajaram SHANBHAG, Guangbi YUAN, Thadeous BAMFORD, Curtis Warren BAILEY, Tony KAUSHAL, Krishna BIRRU, William SCHLOSSER, Bo GONG, Huatan QIU, Fengyuan LAI, Leonard Wai Fung KHO, Anand CHANDRASHEKAR, Andrew H. BRENINGER, Chen-Hua HSU, Geoffrey HOHN, Gang LIU, Rohit KHARE
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Publication number: 20220275504Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: ApplicationFiled: May 16, 2022Publication date: September 1, 2022Inventors: Damodar Rajaram SHANBHAG, Guangbi YUAN, Thadeous BAMFORD, Curtis Warren BAILEY, Tony KAUSHAL, Krishna BIRRU, William SCHLOSSER, Bo GONG, Huatan QIU, Fengyuan LAI, Leonard Wai Fung KHO, Anand CHANDRASHEKAR, Andrew H. BRENINGER, Chen-Hua HSU, Geoffrey HOHN, Gang LIU, Rohit KHARE
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Publication number: 20220238333Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.Type: ApplicationFiled: April 12, 2022Publication date: July 28, 2022Inventors: Guangbi YUAN, Ieva NARKEVICIUTE, Bo GONG, Bhadri N. VARADARAJAN
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Publication number: 20220238334Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.Type: ApplicationFiled: April 12, 2022Publication date: July 28, 2022Inventors: Guangbi YUAN, Ieva NARKEVICIUTE, Bo GONG, Bhadri N. VARADARAJAN
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Publication number: 20220235463Abstract: In one embodiment, the disclosed subject matter is a method to produce a substantially uniform, silicon-carbide layer over both dielectric materials and metal materials. In one example, the method includes forming a silicon-nitride layer over the dielectric materials and the metal materials, and forming the silicon carbide layer over the silicon-nitride layer. Other methods are disclosed.Type: ApplicationFiled: May 5, 2020Publication date: July 28, 2022Inventors: Guangbi Yuan, Bo Gong, Leva Narkeviciute, Bhadri Varadarajan, Fengyuan Lai, Andrew Mckerrow
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Patent number: 11365479Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: GrantFiled: July 22, 2020Date of Patent: June 21, 2022Assignee: Lam Research CorporationInventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Huatan Qiu, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare
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Publication number: 20210391171Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.Type: ApplicationFiled: October 10, 2019Publication date: December 16, 2021Inventors: Guangbi Yuan, Ieva Narkeviciute, Bo Gong, Bhadri N. Varadarajan
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Publication number: 20210164097Abstract: In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.Type: ApplicationFiled: December 6, 2018Publication date: June 3, 2021Inventors: Fengyuan Lai, Bo Gong, Guangbi Yuan, Chen-Hua Hsu, Bhadri Varadarajan
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Publication number: 20200347497Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: ApplicationFiled: July 22, 2020Publication date: November 5, 2020Inventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Huatan Qiu, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare
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Patent number: 10760158Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: GrantFiled: April 16, 2018Date of Patent: September 1, 2020Assignee: Lam Research CorporationInventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare, Huatan Qiu
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Publication number: 20190185999Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: ApplicationFiled: April 16, 2018Publication date: June 20, 2019Inventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Huatan Qiu, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare
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Patent number: 10297442Abstract: Provided are methods and apparatuses for depositing a graded or multi-layered silicon carbide film using remote plasma. A graded or multi-layered silicon carbide film can be formed under process conditions that provide one or more organosilicon precursors onto a substrate in a reaction chamber. Radicals of source gas in a substantially low energy state, such as radicals of hydrogen in the ground state, are provided from a remote plasma source into reaction chamber. In addition, co-reactant gas is flowed towards the reaction chamber. In some implementations, radicals of the co-reactant gas are provided from the remote plasma source into the reaction chamber. A flow rate of the co-reactant gas can be changed over time, incrementally or gradually, to form a multi-layered silicon carbide film or a graded silicon carbide film having a composition gradient from a first surface to a second surface of the graded silicon carbide film.Type: GrantFiled: September 30, 2016Date of Patent: May 21, 2019Assignee: Lam Research CorporationInventors: Bhadri N. Varadarajan, Bo Gong, Guangbi Yuan, Zhe Gui, Fengyuan Lai
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Publication number: 20180251893Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.Type: ApplicationFiled: March 3, 2017Publication date: September 6, 2018Inventors: Geoffrey Hohn, Huatan Qiu, Rachel Batzer, Guangbi Yuan, Zhe Gui