Abstract: Disclosed is a display apparatus, the display apparatus includes: a base, a display layer disposed on a side of the base, and a color filter layer disposed on a display side of the display layer. The display layer includes a plurality of sub-pixels. The color filter layer includes a plurality of color resistance portions in one-to-one correspondence with the plurality of sub-pixels. A thickness of any color resistance portion of the plurality of color resistance portions is decreased in a direction away from a reference line of the color resistance portion, and the reference line is a straight line passing through a geometric center of the color resistance portion and perpendicular to the base.

Abstract: Provided are a display apparatus and a manufacturing method therefor, the display apparatus comprising: a plurality of mutually independent subpixel regions; a light source (101), light emitted from the light source (101) illuminating the subpixel regions; and a light control layer (102), which is located on a light exiting side of the light source (101), the light control layer (102) comprising: color conversion structures (1021) located at the subpixel regions, the color conversion structures (1021) each comprising a nanoporous material and at least a color conversion material distributed among the nanoporous material, the color conversion material being used to convert light emitted from the light source (101) into light of a color corresponding to the subpixel region where the light is located.

Abstract: A display backboard and a manufacturing method thereof, and a display device are provided. The display backboard includes: a driving substrate; a plurality of driving electrodes on the driving substrate; and a plurality of connection structures respectively on the plurality of driving electrodes. The connection structure includes: at least one conductive component on the driving electrode; and a restriction component on a side of the driving electrodes provided with the at least one conductive component and in at least a part of a peripheral region of the at least one conductive component. The restriction component protrudes from the driving electrode and has a first height in a direction perpendicular to the driving substrate.

Abstract: Provided are a display panel and a manufacturing method therefor, and a display device. The display panel, including: a base substrate; and a plurality of sub-pixels, located on the base substrate, including a pixel circuit and a light-emitting element, wherein the light-emitting element is connected to the pixel circuit, the pixel circuit is configured to drive the light-emitting element; the light-emitting element includes: a first electrode; and a second electrode, electrically connected to the first electrode, the first electrode is closer to the base substrate than the second electrode.

Abstract: The present disclosure relates to a display substrate and a method for manufacturing the same. The display substrate includes: a substrate; a first electrode located on the substrate; and a conductive convex located on the first electrode. A dimension of a cross section of the conductive convex along a plane parallel to the substrate is negatively correlated to a distance from the cross section to a surface of the first electrode.

Abstract: Disclosed are an array substrate and a display panel. The array substrate includes: a base substrate; a first thin film transistor on the base substrate; where the first thin film transistor includes: a first gate electrode, a first active layer, a first source electrode, and a first drain electrode; where the first active layer includes: at least one guide structure extending in a first direction; a silicon-based nanowire, disposed on a side of the guide structure facing away from the base substrate; and an extending direction of the silicon-based nanowire is same as an extending direction of the guide structure.

Abstract: Provided are an array substrate and a manufacturing method thereof, the manufacturing method includes: forming a first active layer on a base substrate; forming a second active layer; forming a second gate on the second active layer; forming a first insulating layer covering the first active layer on the second gate; patterning the first insulating layer to form first via holes at both sides of the second gate to expose the second active layer; depositing a first metal layer in the first via holes and on the first insulating layer; patterning the first metal layer, removing a part of the first metal layer above the first active layer to expose the first insulating layer; etching the first insulating layer using the patterned first metal layer as a mask, forming second via holes above the first active layer to expose the first active layer; cleaning the exposed first active layer.

Abstract: Disclosed is a display apparatus, the display apparatus includes: a base, a display layer disposed on a side of the base, and a color filter layer disposed on a display side of the display layer. The display layer includes a plurality of sub-pixels. The color filter layer includes a plurality of color resistance portions in one-to-one correspondence with the plurality of sub-pixels. A thickness of any color resistance portion of the plurality of color resistance portions is decreased in a direction away from a reference line of the color resistance portion, and the reference line is a straight line passing through a geometric center of the color resistance portion and perpendicular to the base.

Abstract: A display panel includes a base; a plurality of display units disposed on a surface of the base, every two adjacent display units being provided with a gap therebetween; and a connection unit disposed in the gap and connected to the every two adjacent display units. The connection unit includes a first organic layer, a conductive layer and a second organic layer that are sequentially stacked. The first organic layer and the second organic layer are each configured to block stress causing the connection unit to deform.

Abstract: A method for manufacturing a thin film transistor, and a thin film transistor are provided. The method includes: forming an active layer on a substrate by a single patterning process; forming a gate insulating layer by deposition on a side of the active layer away from the substrate; forming a first via hole and a second via hole penetrating through the gate insulating layer by a single patterning process, the first and second via holes being located at two ends of the active layer respectively; and forming a first electrode, a gate electrode, and a second electrode on the gate insulating layer by a single patterning process, the first and second electrodes being connected to the active layer through the first and second via holes, respectively, and an orthographic projection of the gate electrode on the substrate at least partially overlapping that of the active layer on the substrate.

Abstract: A display backboard and a manufacturing method thereof, and a display device are provided. The display backboard includes: a driving substrate; a plurality of driving electrodes on the driving substrate; and a plurality of connection structures respectively on the plurality of driving electrodes. The connection structure includes: at least one conductive component on the driving electrode; and a restriction component on a side of the driving electrodes provided with the at least one conductive component and in at least a part of a peripheral region of the at least one conductive component. The restriction component protrudes from the driving electrode and has a first height in a direction perpendicular to the driving substrate.

Abstract: A LED chip, including: substrate; LEDs on side of the substrate, each including first semiconductor pattern, light emission pattern, second semiconductor pattern sequentially stacked, the first semiconductor patterns of at least two LEDs being formed as single piece to constitute first semiconductor layer; at least one first electrode on side of first semiconductor layer away from the substrate and electrically coupled to first semiconductor layer; second electrodes on side of the second semiconductor patterns away from the substrate, each being electrically coupled to second semiconductor pattern of corresponding LED; pixel defining layer on side of the substrate away from LED, and having pixel openings in one-to-one correspondence with LEDs; and a color conversion pattern within at least two pixel openings, and converting light of first color emitted by the light emission pattern into light of target color other than the first color. The LED chip is Mini-LED or Micro-LED chip.

Abstract: A metal oxide semiconductor material includes a semiconductor base material and at least one kind of rare earth compound doped in the semiconductor base material, Each kind of rare earth compound has a general formula represented as (MFD)aAb, where in s the general formula (MFD)aAb, MFD is an element selected from rare earth elements capable of undergoing f-d transition and/or charge transfer transition, A is selected from elements capable of stretching a wavelength range of an absorption spectrum of MFD capable of undergoing the f-d transition and/or the charge transfer transition towards red light into a visible light range, a is a number of the element MFD in the general formula (MFD)aAb, and b is a number of the element A in the general formula (MFD)aAb.

Abstract: Provided is a display backplate including an array substrate and a plurality of pairs of connection structures on the array substrate, wherein the array substrate includes a plurality of thin-film transistors and a common electrode signal line, wherein at least one of the plurality of thin-film transistors is connected to one of a pair of connection structures and the common electrode signal line is connected to the other of the pair of connection structures; and an area of a first section of the connection structure is negatively correlated with a distance between the first section and a surface of the array substrate, and the first section is parallel to the surface of the array substrate.

Abstract: The present disclosure provides a driving substrate including: a flexible substrate base, a plurality of thin film transistors on the flexible substrate base and a first conductive pattern layer on a side of the thin film transistors distal to the flexible substrate base. The first conductive pattern layer includes: a plurality of first connection terminals in the display region and a plurality of signal supply lines in the bendable region. A first number of first connection terminals are electrically coupled to first electrodes of the plurality of thin film transistors. The plurality of signal supply lines are coupled to a second number of first connection terminals other than the first number of first connection terminals. At least one inorganic insulating layer including a hollowed-out pattern in the bendable region is between the first conductive pattern layer and the flexible substrate base.

Abstract: Provided are a display substrate, a method for manufacturing a display substrate and a display apparatus. The display substrate includes a base, a drive structure layer disposed on the base, a light emitting element disposed on the drive structure layer, an encapsulation layer disposed on the light emitting element, a circular polarizer layer disposed on the encapsulation layer, and a lens definition layer and a lens structure layer disposed on the circular polarizer layer. The light emitting element includes a pixel definition layer provided with a plurality of sub-pixel openings; the lens structure layer includes a plurality of lenses disposed at intervals, the lens definition layer is disposed in a gap region between adjacent lenses, and an orthographic projection of each lens on the base contains an orthographic projection of a sub-pixel opening on the base.

Abstract: This disclosure provides an array substrate, a method for preparing the array substrate, and a display panel. The method includes: forming a first thin film transistor and a second thin film transistor on a base substrate. In the formation of an active layer of the first thin film transistor, by using an eutectic point of the catalyst particle and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon (silicon-based nanowire), and due to absorption of the amorphous silicon by the molten catalyst particle to form a supersaturated silicon eutectoid, the silicon nucleates and grows into a silicon-based nanowire. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide structure under the action of the catalyst particle, thus obtaining a silicon-based nanowire with a high density and high uniformity.

Abstract: The present application relates to a substrate transfer device, comprising a horizontally arranged cross beam, and support beams longitudinally arranged at two ends of the cross beam, wherein a substrate carrier is suspended on the cross beam, the substrate carrier is located between the two support beams, and the substrate carrier is parallel to a plane where the two support beams are located, the substrate carrier comprises two side walls oppositely arranged in a horizontal direction, and each of the support beams is provided with an auxiliary clamping structure for clamping the substrate carrier during transferring of the substrate carrier.

Abstract: The present disclosure provides a carrier liquid leakage preventing device and an electrochemical deposition apparatus. The carrier liquid leakage preventing device is used for containing liquid medicine dripping from a carrier; the carrier liquid leakage preventing device comprises: a guide rail disposed along a first direction, the first direction is a vertical direction perpendicular to the horizontal plane or a direction at an angle to the horizontal plane; a leakage preventing groove provided on the guide rail and capable of performing a lifting movement along the guide rail so as to move above or below the carrier; and a driver for driving the lifting movement of the leakage preventing groove.

Abstract: Provided is a display backplate including an array substrate and a plurality of pairs of connection structures on the array substrate, wherein the array substrate includes a plurality of thin-film transistors and a common electrode signal line, wherein at least one of the plurality of thin-film transistors is connected to one of a pair of connection structures and the common electrode signal line is connected to the other of the pair of connection structures; and an area of a first section of the connection structure is negatively correlated with a distance between the first section and a surface of the array substrate, and the first section is parallel to the surface of the array substrate.