Abstract: An array substrate and a manufacturing method thereof and a display device are provided. The array substrate includes a base substrate, a polarizer, a plurality of active elements, a first organic protective layer and a first inorganic protective layer. The polarizer is located on a first side of the base substrate; the plurality of active elements are arranged in an array form and provided on a second side of the base substrate opposite to the first side; the first organic protective layer is located on a side of the polarizer facing away from the base substrate and covers the polarizer; and the first inorganic protective layer is located on a side of the first organic protective layer facing away from the polarizer and covers the first organic protective layer.

Abstract: The display substrate includes a base substrate (101) including a display area (AA) and a peripheral area (BB) on at least one side of the display area (AA); and an infrared sensor (102) on the base substrate (101). The infrared sensor (102) is integrated in the peripheral area (BB). The infrared sensor (102) includes a first electrode (1021), a photoelectric conversion function layer (1022) and a second electrode (1023) that are arranged in a stacked manner. The first electrode (1021) is arranged adjacent to the base substrate (101), the second electrode (1023) is made of a transparent conductive material, and the infrared sensor (102) collects infrared rays reflected by an eye from a side where the second electrode (1023) is located.

Abstract: The present disclosure provides a wavelength converting unit-containing substrate, wherein an additional bank is provided on a bank between adjacent sub-pixel regions for different colors. Further, an auxiliary bank may be provided between the additional bank and the bank. The present disclosure also provides a method for manufacturing the wavelength converting unit-containing substrate and a display panel comprising the wavelength converting unit-containing substrate.

Abstract: A display panel, a preparation method therefor, and a display device. The display panel includes: a stretchable substrate including: island areas in array, bridge areas, blanking areas outside the island areas and the bridge areas; the bridge area connects two adjacent island areas; a flexible substrate on one side of stretchable substrate, the flexible substrate includes: a hollow area corresponding to bridge and blanking areas; a driving circuit layer on one side away from stretchable substrate, of the flexible substrate; the driving circuit layer includes: drive units and connecting leads; the drive units are in island areas, the connecting lead passes through the bridge area and extends to the island area to be electrically connected with the drive unit; in unstretched state, at least parts of the connecting lead sinks on one side facing the flexible substrate or the connecting lead protrudes on one side away from the flexible substrate.

Abstract: An optical path structure, an optical path system, and a transfer method. The optical path structure includes a beam adjustment module configured to adjust a diameter of a laser beam and output a first beam; a beam shaping module configured to perform energy homogenization on the first beam to obtain a second beam; and a beam focusing module configured to focus the second beam and output a target light spot; the target light spot is used for irradiating a device substrate, so that a bonding material in the device substrate changes after being irradiated by the target light spot, and a target device is separated from a carrier substrate; where the bonding material is disposed between the target device and the carrier substrate.

Abstract: A display substrate, a method of manufacturing the display substrate, a display panel, and a display device are provided. The display panel includes: an array substrate and an opposite substrate disposed opposite to each other; a liquid crystal layer between the array substrate and the opposite substrate; a first support component on a side of the array substrate facing the liquid crystal layer; and a second support component on a side of the opposite substrate facing the liquid crystal layer. An end portion of a side of the first support component facing away from the array substrate is contacted with an end portion of a side of the second support component facing away from the opposite substrate, and a contact surface has a concave-convex structure.

Abstract: A metal oxide thin film transistor is provided, which includes a metal oxide semiconductor layer, including a first semiconductor layer and a second semiconductor layer, the carrier mobility of the first semiconductor layer is higher than that of the second semiconductor layer; the metal oxide semiconductor layer includes a lower surface, an upper surface and a lateral surface, the source electrode is in contact with the lateral surface and the upper surface; the region where the lateral surface contacts the source electrode or the drain electrode includes a first contact region and a second contact region; which have the shape: a first angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the first contact region is larger than a second angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the second contact region.

Abstract: A thin film transistor; includes a substrate; and a semiconductor layer provided on the substrate. The semiconductor layer includes a first surface proximate to the substrate and a second surface away from the substrate, and the semiconductor layer is made of a metal oxide semiconductor material. The semiconductor layer has a channel region; and crystals of metal oxide semiconductor are formed at least in the channel region of the semiconductor layer and proximate to the first surface or the second surface.

Abstract: An array substrate and a display panel. The array substrate includes: a base substrate; a gate line and a data line on the base substrate, the gate line intersect the data line to define a pixel region; a metal oxide thin film transistor is arranged in the pixel region, the metal oxide thin film transistor includes a metal oxide semiconductor layer; the metal oxide semiconductor layer includes a first part and a second part; the first part and the data line are connected through a first via hole; the first part is in a stripe shape; a first included angle is between extension directions of the first part and the data line; an orthographic projection of the second part overlap with an orthographic projection of the gate line on the base substrate and do not overlap with an orthographic projection of the data line on the base substrate.

Abstract: A display substrate is provided, the display substrate has a plurality of sub-pixels, and includes a driving circuit substrate, a plurality of first electrodes, a pixel definition layer and a light-emitting material layer. The driving circuit substrate includes a plurality of pixel driving circuits and a protective insulating layer, the protective insulating layer includes a plurality of first vias, and the plurality of first electrodes are respectively electrically connected to the output terminals of the plurality of pixel driving circuits through the first vias. The pixel definition layer includes a plurality of sub-pixel openings and at least one partition structure. The light-emitting material layer at least in the plurality of sub-pixel openings, the pixel definition layer includes a first pixel definition sub-layer and a second pixel definition sub-layer, and a width of the second pixel definition sub-layer is greater than a width of the first pixel defining sub-layer.

Abstract: Voltage providing unit, voltage providing method, display driving module and display device are provided. The voltage providing unit, applied to a display panel, is configured to provide a control voltage signal for a driving circuit, and the voltage providing unit includes a buck circuit and a first electrical level converting circuit. The buck circuit is configured to receive a first voltage signal and perform a buck operation on the first voltage signal to obtain a second voltage signal; and the first electrical level converting circuit is connected to the buck circuit, and is configured to receive an input control voltage, a third voltage signal and the second voltage signal, and to generate the control voltage signal in accordance with the input control voltage, the third voltage signal and the second voltage signal, a voltage value of the control voltage signal is less than a predetermined voltage value.

Abstract: A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.

Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor; an average turn-on current of at least one first thin film transistor is Ion1, and an average turn-on current of at least one second thin film transistor is Ion2, Ion1>Ion2.

Abstract: Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.

Abstract: The present disclosure provides a display backplane including an array substrate including at least one pixel unit each including at least one TFT; a planarization layer covering the array substrate; a pad layer including pads on the planarization layer, surface of the pad away from the planarization layer being first surface, each pixel unit being provided with one pad electrically coupled to a driving thin film transistor in a corresponding pixel unit through via hole penetrating through the planarization layer; a passivation layer covering the pad layer and including through holes, each pad corresponding to one through hole, such that the first surface of each pad is exposed through corresponding through hole, and area of top opening of through hole is smaller than area of bottom opening thereof. The present disclosure further provides a fabrication method of the display backplane, a display panel and a fabrication method thereof.

Abstract: An array substrate includes: a base; gate lines and data lines on the base; multiple pixel units each including a thin film transistor; first and second conductive layers with a first insulating layer therebetween. The first conductive layer includes a first wiring pattern, the second conductive layer includes a first interconnection pattern, orthographic projections of the first wiring pattern and the first interconnection pattern on the base are at least partially overlapped. The first wiring pattern is connected with the first interconnection pattern through a via hole. Each of part of data lines is located in the first conductive layer and has an auxiliary line formed by the first interconnection pattern in the second conductive layer. The first wiring pattern includes the data lines; at least one of the data line and the first interconnection pattern is connected to a source of the thin film transistor.

Abstract: The present application discloses an array substrate and a splicing screen. The array substrate provided by an embodiment of the present application includes: a flexible base, wherein the flexible base includes a display region, a first region and a second region, the display region and at least one of the first region and the second region are located in different planes, and the first region is located between the display region and the second region; a plurality of signal lines, arranged on the display region and the first region; a plurality of fan-out lines, arranged on the second region and connected with the plurality of signal lines in a one-to-one correspondence; and a buffer cushion, arranged on the first region, wherein an orthographic projection of the buffer cushion on the flexible base does not overlap with orthographic projections of the signal lines on the flexible base.

Abstract: Embodiments of the present application disclose a method for manufacturing a naked-eye 3D device and a naked-eye 3D device. The method includes: forming a display module including a plurality of pixel islands; forming a spacer layer on the display module; and forming a micro-lens array on the spacer layer, wherein the spacer layer is formed to have a thickness such that the plurality of pixel islands are located at a focal plane of the micro-lens array. The method further includes: forming an alignment mark between the spacer layer and the display module, wherein the alignment mark is used for, when forming the micro-lens array, aligning each micro-lens in the micro-lens array with one of the plurality of pixel islands.

Abstract: The present application relates to the technical field of display, and discloses an OLED display panel and a display device. The OLED display panel includes a drive backplane; and an OLED device, an encapsulation structure and a color resistor structure which are arranged on the drive backplane; the encapsulation structure and the color resistor structure are located on a side, facing away from the drive backplane, of the OLED device, and the color resistor structure includes a chromatic color resistor layer, a first BM and a second BM; and the first BM is located on a side, facing away from the drive backplane, of the chromatic color resistor layer, and the second BM is located on a side, facing the drive backplane, of the chromatic color resistor layer.

Abstract: The present application provides a display panel, a method for fabricating a display panel and a displaying device. The display panel particularly includes at least two neighboring displaying base plates; each of the them includes a flexible substrate and a transparent cover plate that are provided in stack; the flexible substrate is delimited into a displaying region, a bending region and a bonding region, the displaying region and the bonding region are connected by the bending region, the displaying region and the bonding region are parallel, and the bonding region is located on one side of the displaying region that is away from the transparent cover plate; the transparent cover plate is provided with a light shielding layer on one side that is closer to the flexible substrate, and an orthographic projection of the bending region on the transparent cover plate is within an area of the light shielding layer.