Abstract: In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

Abstract: An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.

Abstract: A display device includes: a plurality of pixel units, where each pixel unit includes two suppression color changing sub-pixel units configured for exciting light waves of different colors. Each suppression color changing sub-pixel unit includes: a first transparent electrostatic sheet and a second transparent electrostatic sheet which are disposed opposite to each other and insulated from each other, where the first transparent electrostatic sheet is disposed on a substrate and the second transparent electrostatic sheet is disposed on the first transparent electrostatic sheet. The display device further includes: a suppression color changing light emitting layer disposed between the first transparent electrostatic sheet and the second transparent electrostatic sheet; and a transparent pressure deformation sensor disposed at a side of the second transparent electrostatic that is away from the substrate.

Abstract: A thin-film transistor (TFT) is provided in this disclosure, which comprises Sn-doped ZrO2. This oxide semiconductor material can be used in a semiconductor layer of a TFT, and a mass percentage of Sn doped in the ZrO2 is about 1%-95%. A semiconductor layer comprising Sn-doped ZrO2 exhibits higher acid tolerance after annealing. This disclosure also provides a method for fabricating a TFT, which comprises: (i) forming a semiconductor layer, wherein the semiconductor layer comprises Sn-doped ZrO2, and (ii) annealing the semiconductor layer.

Abstract: The present disclosure discloses a thin film transistor, an array substrate and their manufacturing methods, and a display apparatus. The method for manufacturing the thin film transistor of the present disclosure comprises a step of forming an insulation layer, wherein the step of forming the insulation layer further comprises forming a siloxane material layer, oxidizing the siloxane material layer such that an inorganic silicon film is formed on a surface of the siloxane material layer, and curing the oxidized siloxane material layer to obtain the insulation layer. In this disclosure, the outer layer of the insulation layer is an inorganic silicon film which is a commonly-used material for making the insulation layer in prior art, and the inner layer of the insulation layer is made of the siloxane material having a low dielectric constant and high chemical stability.

Abstract: The present invention provides a display backplane and a manufacturing method thereof, as well as a display device. The display backplane comprising: a substrate; an array of organic light emitting elements and an array of transistors for driving and controlling the array of organic light emitting elements formed on the substrate; and a heat insulation layer formed between the array of organic light emitting elements and the array of transistors, wherein the heat insulation layer is provided with a heat insulation layer via hole, through which the array of transistors is connected with the array of organic light emitting elements. The display backplane provided in the present invention can reduce the conduction of heat generated by the array of organic light emitting elements during lighting to the array of transistors, thus avoiding problems caused thereby such as uneven display.

Abstract: Embodiments of the present disclosure provide a shift register unit and a driving method thereof, a row scanning driving circuit and a display device. The shift register unit includes an input terminal, a reset terminal, and an output terminal, and further includes an input module configured to pull up the electric level at the first node, an output module configured to pull up the electric level at the output terminal, a reset module configured to pull down the electric level at the first node, and a first pull-down module configured to pull down the electric level at the output terminal. Embodiments of the present disclosure can solve the problem that the floating state of the row scanning driving circuit affects the output stability.

Abstract: A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor.

Abstract: A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.

Abstract: The present disclosure provides a color filter substrate used in an organic light-emitting diode (OLED) or liquid crystal (LC) display structure for improving a contrast ratio and light output. The color filter substrate includes a substrate; a color filter layer comprising a plurality of pixel units; and a reflective metallic matrix comprising a plurality of reflective metallic matrix elements surrounding each pixel unit.

Abstract: A method for manufacturing the thin film transistor, including: forming a gate, an active layer and a gate insulating layer disposed between the gate and the active layer; wherein the gate insulating layer is in a double-layer structure comprising a first gate insulating layer next to the gate and a second gate insulating layer next to the active layer, and one of the first gate insulating layer and the second gate insulating layer is annealed.

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

Abstract: The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.

Abstract: This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.

Abstract: The present disclosure provides an active layer, a thin film transistor, an array substrate, and a display apparatus, and fabrication methods thereof. A method for fabricating an active layer in a thin film transistor is provided by forming a thin film by a direct current (DC) sputtering process; and etching the thin film to form the active layer. The thin film is made of a material selected to provide the active layer with a carrier concentration of at least approximately 1×1017 cm?3 and a carrier mobility of at least approximately 20 cm2/Vs.

Abstract: A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.

Abstract: A pixel circuit and a driving method thereof, and a display panel including the same. The pixel circuit includes, a first module and a second driving circuit, the first driving circuit drives the light emitting circuit to emit light during a first period under control of a first scanning signal at the first scanning control terminal, and the second driving circuit drives the light emitting circuit to emit light during a second period under control of a second scanning signal at the second scanning control terminal, the first and the second period not overlapping with each other. A light emitting device is alternately driven to emit light by using two driving circuits, so that one driving circuit enters a recovery stage while the other driving circuit drives the light emitting device to emit light, and thus threshold voltage drift of driving transistor can be reduced, while lifespan thereof can be prolonged.

Abstract: The present disclosure provides gamma curve adjusting method and device, and the method includes: substituting a preset maximum brightness value, a preset gamma value and gray-scale values into a standard gamma curve calculation formula, to obtain brightness values corresponding to the gray-scale values; selecting N gray-scale values from the gray-scale values, and actually measuring, in the condition of the selected N gray-scale values, gray-scale voltage values required to reach brightness values, respectively corresponding to the selected N gray-scale values, calculated according to the standard gamma curve calculation formula, where N is a positive integer; obtaining a function formula between gray-scale voltage value and brightness value according to brightness values respectively corresponding to the selected N gray-scale values and the actually measured gray-scale voltage values; and calculating gray-scale voltage values corresponding to brightness values smaller than or equal to the preset maximum bri

Abstract: A test method of a display panel and a test device are disclosed. The test method includes outputting a data signal of a preset test image to the display panel to cause plural light emitting elements to emit light according to the preset test image; outputting a starting signal to a scan circuit in the display panel to cause the scan circuit to output an active level of a switching circuit to the plural rows of first scan lines as connected, successively, according to a preset timing sequence; receiving a sensing signal from a sensor circuit, including voltage value information of a first terminal of every light emitting element; comparing the voltage value information of the first terminal of every light emitting element with the preset test image to obtain a test result. The test method solves the problem of missing detection of Mura.