Abstract: The disclosure relates to a CMOS structure and a manufacturing method thereof. The CMOS structure includes a substrate and an N-type TFT and a P-type TFT on the substrate. The N-type TFT includes a first gate electrode, a first active layer, and a first gate dielectric layer therebetween. The first active layer includes a first semiconductor layer, a second semiconductor layer of the N-type, and a third semiconductor layer of the N-type which are located at opposite ends of the first semiconductor layer and sequentially stacked in a direction away from the first gate dielectric layer. An N-type doping concentration of the second semiconductor layer is smaller than that of the third semiconductor layer. The P-type TFT includes a fifth semiconductor layer and a sixth semiconductor layer. A P-type doping concentration of the fifth semiconductor layer is smaller than that of the sixth semiconductor layer.

Abstract: The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.

Abstract: A microfluidic channel structure and a fabrication method thereof, a microfluidic detecting device and a detecting method thereof are disclosed. The microfluidic channel structure includes a support portion; a foundation portion, provided on the support portion and including a first foundation and a second foundation spaced apart from each other; and a channel defining portion, provided on a side of the foundation portion that is away from the support portion and including a first channel layer and a second channel layer, the first channel layer covering the first foundation and the second channel layer covering the second foundation have a gap therebtween to define a microfluidic channel; and the first channel layer and the second channel layer are made of a same material.

Abstract: A digital exposure machine and an exposure control method thereof are disclosed. The exposure control method of the digital exposure machine includes: determining a scanning direction of the digital exposure machine, wherein a plurality of sub-pixels in an array include multiple rows of sub-pixels arranged in the scanning direction, the multiple rows of sub-pixels including a first row of sub-pixels in the scanning direction; determining a starting scanning position, the starting scanning position being located on an outer side of the first row of sub-pixels in the scanning direction; and performing a plurality of scannings to expose a display region of the first display substrate to be exposed, wherein a scanning pitch for each of the plurality of scannings is integer times of a pitch of two adjacent rows of sub-pixels of the first display substrate in the scanning direction.

Abstract: A display substrate and a manufacturing method thereof and a display device are disclosed. The manufacturing method of the display substrate includes: forming a first display electrode; and forming a thin film transistor, which includes forming a semiconductor layer; The first display electrode and the semiconductor layer are in one same layer, and a step of forming the first display electrode is performed before performing a step of forming the semiconductor layer.

Abstract: A stretchable display panel having a plurality of encapsulated islands and a plurality of bridges connecting the plurality of encapsulated islands is provided. The stretchable display panel includes a stretchable base substrate; a flexible base wall on the stretchable base substrate, the flexible base wall substantially enclosing a substantially enclosed space; an adhesive layer on the stretchable base substrate and substantially enclosed in the substantially enclosed space; and a plurality of light emitting elements on a side of the adhesive layer away from the stretchable base substrate. A respective one of the plurality of encapsulated islands includes at least one of the plurality of light emitting elements encapsulated therein on the stretchable base substrate.

Abstract: A display substrate is provided. The display substrate includes a functional area; and a buffer area substantially surrounding the functional area, wherein the functional area includes a display area and a peripheral area between the display area and the buffer area; one or more insulating layers on a base substrate, and in the functional area and the buffer area; and an encapsulating structure on a side of the one or more insulating layers away from the base substrate, and encapsulating a plurality of light emitting elements in the display area. The one or more insulating layers include a first part in the functional area and at least a second part in the buffer area. The second part is spaced apart from the first part. The display substrate further includes a first enclosure ring on a side of the second part away from the base substrate.

Abstract: A flexible display panel and a film-like structure are provided according to the present disclosure. The flexible display panel includes a flexible display structure and a film-like structure arranged on at least one side of the flexible display structure. The film-like structure includes: a first flexible layer, a second flexible layer, a filler sealed between the first flexible layer and the second flexible layer, and a heater configured to heat the filler. A hardness of the filler varies with a temperature of the filler.

Abstract: The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.

Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.

Abstract: The present disclosure provides a stacked display panel, a manufacturing method, and a display device. The stacked display panel includes a first display substrate, a second display substrate, and a third display substrate arranged in sequence. A color filter layer is on a side of the second display substrate facing the first display substrate, and a polarizing layer is on a side of the second display substrate facing the third display substrate. A first polarizer is on a side of the first display substrate facing away from the second display substrate, and a transmission axis direction of the first polarizer and a transmission axis direction of the polarizing layer are perpendicular to each other. A second polarizer is on a side of the third display substrate facing away from the second display substrate, and transmission axis directions of the second polarizer and the polarizing layer are perpendicular to each other.

Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.

Abstract: An embodiment of the present disclosure provides an array substrate and a display panel. The array substrate includes a base substrate, organic electroluminescence components arranged on the base substrate in an array, and a photoelectric conversion component corresponding to each of the organic electroluminescence components. A luminescent spectrum of each organic electroluminescence component comprises a first waveband and a second waveband. The first waveband is determined by an emission peak of the luminescent spectrum, and is used to determine brightness and tone purity of light emitted by the organic electroluminescence component. The photoelectric conversion component is at least used to convert light of the second waveband emitted by a corresponding organic electroluminescence component into electric energy.

Abstract: A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.

Abstract: The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.

Abstract: Provided are a display structure and a preparation method thereof, and a display apparatus. The display structure includes a flexible back plate and a display substrate which are stacked, the flexible back plate including a bonding electrode for bonding to an integrated circuit chip, and the flexible back plate being bent to form a bent portion on which the bonding electrode is located.

Abstract: An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.

Abstract: A display substrate, a manufacturing method thereof and a display device are provided. Pixel regions of the display substrate are divided into a plurality of pixel groups, and a plurality of guide bars is arranged at a surface of a pixel definition layer between at least parts of adjacent pixel regions in each pixel group. A guide groove is formed between two adjacent guide bars, so as to guide the flow of ink, thereby to enable the ink to be uniformly distributed at all the pixel regions in each pixel group.

Abstract: A crucible, an evaporation source and an evaporation device are disclosed. The crucible includes a crucible body. The crucible body includes: an inner heating layer with a first heater assembly and an outer heating layer with a second heater assembly. The outer heating layer is at a periphery of the inner heating layer, and surrounds the inner heating layer, and a space between the outer heating layer and the inner heating layer defines an accommodation space for a to-be-evaporated material.

Abstract: Embodiments of the present invention disclose an electrode structure, a method of fabricating the same, a thin film transistor, and an array substrate. An electrode structure is provided that comprises: an electrical conductor (23 or 25) including a protective layer and a conductive layer (10), the protective layer comprising: a first protective layer (11 and 12) disposed on a surface of the conductive layer and a second protective layer (13) disposed on at least a side face of the conductive layer, the second protective layer being configured for isolating the conductive layer from the outside.