Abstract: The present invention relates to a composition comprises at least one random copolymer having at least one repeat unit of structure (1), The present invention also relates to novel processes for forming patterns using this novel crosslinked layer on a substrate by enable a film of a block copolymer coated on the novel crosslinked layer to undergo self-assembly.

Abstract: The present invention relates to a composition consisting essentially of an alkylbenzenesulfonic acid having structure (I) (wherein n is an integer from 0 to 16); a solvent which is either selected from the group consisting of solvents having structures (II), (wherein R is selected from the group consisting of —(—O—CH2—CH2—)n—OH, —OH, —O—C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), a solvent having structure (III), a solvent having structure (IV), and a solvent having structure (V), or a solvent mixture, of at least two solvents selected from this group. In another embodiment, the composition also consists of, additionally, a surfactant component. This invention also relates to using either of these compositions to remove a patterned photoresist from a substrate.

Abstract: The present invention relates to a composition consisting essentially of a sulfonic acid component selected from the group consisting of camphor sulfonic acid, and a benzene sulfonic acid of structure (I), wherein R is H or a C-1 to C-18 n-alkyl, oxalic acid, a solvent component which consists essentially of an organic solvent component, or a mixture of an organic solvent components and water, wherein the organic solvent component consist of about 100 wt % to about 85 wt % of said solvent component, and further wherein said organic solvent component is either selected from solvent (III), (IV), (V), (VI) (wherein R is selected from the group consisting of —(-0-CH2—CH2—)n, —OH, —OH, and -0-C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), (VII) (wherein Ra is H or a C-1 to C-4 alkyl moiety), (VIII), (IX) (wherein Rb is a C-1 to C-18 alkyl moiety), (X), and (XI) or is a mixture, of at least two organic solvents selected from this group.

Abstract: The present invention relates to a composition consisting essentially of a sulfonic acid component selected from the group consisting of camphor sulfonic acid, and a benzene sulfonic acid of structure (I), wherein R is H or a C-1 to C-18 n-alkyl, oxalic acid, a solvent component which consists essentially of an organic solvent component, or a mixture of an organic solvent components and water, wherein the organic solvent component consist of about 100 wt % to about 85 wt % of said solvent component, and further wherein said organic solvent component is either selected from solvent (III), (IV), (V), (VI) (wherein R is selected from the group consisting of —(-0-CH2—CH2—)n?—OH, —OH, and -0-C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), (VII) (wherein Ra is H or a C-1 to C-4 alkyl moiety), (VIII), (IX) (wherein Rb is a C-1 to C-18 alkyl moiety), (X), and (XI) or is a mixture, of at least two organic solvents selected from this group.

Abstract: The present invention relates to a composition consisting essentially of an alkylbenzenesulfonic acid having structure (I) (wherein n is an integer from 0 to 16); a solvent which is either selected from the group consisting of solvents having structures (II), (wherein R is selected from the group consisting of —(—O—CH2—CH2—)n—OH, —OH, —O—C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), a solvent having structure (III), a solvent having structure (IV), and a solvent having structure (V), or a solvent mixture, of at least two solvents selected from this group. In another embodiment, the composition also consists of, additionally, a surfactant component. This invention also relates to using either of these compositions to remove a patterned photoresist from a substrate.

Abstract: Disclosed and claimed herein is a template for directing a pattern in a block copolymer film and the process of making the pattern.

Abstract: The present invention relates to a composition comprises at least one random copolymer having at least one repeat unit of structure (1), The present invention also relates to novel processes for forming patterns using this novel crosslinked layer on a substrate by enable a film of a block copolymer coated on the novel crosslinked layer to undergo self-assembly.

Abstract: The present invention relates to a novel block copolymer of structure 1, wherein, A- is a block polymer chain, B is a block polymer chain, wherein, A- and B- are chemically different, covalently connected polymer chains, which are phase separable and the moiety X(Y(Z)b)a is a junction group, which comprises a surface active pendant moiety Y(Z)b wherein: a is an integer from 1 to 4 denoting the number of surface active pendant moieties Y(Z)b on X, b is an integer from 1 to 5 denoting the number of Z moieties on the linking moiety Y, X is a linking group between the A polymer block, the B polymer block and the moiety Y, Y is a linking group or a direct valence bond between X and Z; and Z is a moiety independently selected from, a fluorine containing moiety, a Si1-Si8 siloxane containing moiety or a hydrocarbon moiety with at least 18 carbons, and further wherein the junction group X(Y(Z)b)a has a surface energy less than that that of the block A and less than that of the block B.

Abstract: The present invention relates to non aqueous, graftable coating composition comprised of a homogenous solution of a polymer and a spin casting organic solvent, where the composition does not contain acidic compounds, coloring particles, pigments or dyes, and the polymer has a linear polymer chain structure which is comprised of repeat units derived from monomers containing a single polymerizable olefinic carbon double bond, and the polymer contains at least one triarylmethyl chalcogenide containing moiety which is selected from the group consisting of repeat units having structure (I) an end chain group unit of structure (II) and mixtures thereof, and the polymer does not contain any repeat units or end groups containing water ionizable groups, ionic groups, free thiol groups, or free hydroxy groups, and where A1, A2, and A3 are independently an Aryl or a substituted Aryl; Y is a chalcogen selected from O, S, Se or Te; X1 and X2 are individually selected organic spacers; P1 is an organic polymer repeat unit m

Abstract: The present invention relates to non aqueous, graftable coating composition comprised of a homogenous solution of a polymer and a spin casting organic solvent, where the composition does not contain acidic compounds, coloring particles, pigments or dyes, and the polymer has a linear polymer chain structure which is comprised of repeat units derived from monomers containing a single polymerizable olefinic carbon double bond, and the polymer contains at least one triarylmethyl chalcogenide containing moiety which is selected from the group consisting of repeat units having structure (I) an end chain group unit of structure (II) and mixtures thereof, and the polymer does not contain any repeat units or end groups containing water ionizable groups, ionic groups, free thiol groups, or free hydroxy groups, and where A1, A2, and A3 are independently an Aryl or a substituted Aryl; Y is a chalcogen selected from O, S, Se or Te; X1 and X2 are individually selected organic spacers; P1 is an organic polymer repeat unit m

Abstract: The present invention relates to novel copolymers containing cross-linkable and graft-able moieties, novel compositions comprised of these novel copolymers and a solvent, and methods for using these novel compositions to form neutral layer films which are both cross-linked and grafted on the substrate which are used in processes for aligning microdomains of block copolymers (BCP) on this neutral layer coated substrate such as self-assembly and directed self-assembly.

Abstract: The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where R1 is hydrogen or C1-C4 alkyl, R2 is selected from a group chosen from hydrogen, C1-C4 alkyl, C1-C4 alkoxy and halide, R3 is selected from a group chosen from hydrogen, C1-C4 alkyl and C1-C4 fluoroalkyl, and R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently chosen from a C1-C4 alkyl and n=1-6. The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.

Abstract: The present invention relates to a novel block copolymer of structure 1, wherein, A- is a block polymer chain, B is a block polymer chain, wherein, A- and B- are chemically different, covalently connected polymer chains, which are phase separable and the moiety X(Y(Z)b)a is a junction group, which comprises a surface active pendant moiety Y(Z)b wherein: a is an integer from 1 to 4 denoting the number of surface active pendant moieties Y(Z)b on X, b is an integer from 1 to 5 denoting the number of Z moieties on the linking moiety Y, X is a linking group between the A polymer block, the B polymer block and the moiety Y, Y is a linking group or a direct valence bond between X and Z; and Z is a moiety independently selected from, a fluorine containing moiety, a Si1-Si8 siloxane containing moiety or a hydrocarbon moiety with at least 18 carbons, and further wherein the junction group X(Y(Z)b)a has a surface energy less than that that of the block A and less than that of the block B.

Abstract: The present invention relates to a two novel processes, “Dual Coating Process and Single Coating Process,” for forming an array of via's by employing a graphoepitaxy approach, where an array of pillars the surface of the pillars has been modified by the formation of a hydrophobic poly(vinyl aryl) brush at the surface of the pillars. The present invention also relates to a composition comprising a poly(vinyl aryl) hydrophopic polymer brush precursor terminated at one chain end with a reactive functional group, a diblock copolymer comprising an etch resistant hydrophobic block and a highly etchable hydrophilic block, a thermal acid generator and a solvent.

Abstract: The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where R1 is hydrogen or C1-C4 alkyl, R2 is selected from a group chosen from hydrogen, C1-C4 alkyl, C1-C4 alkoxy and halide, R3 is selected from a group chosen from hydrogen, C1-C4 alkyl and C1-C4 fluoroalkyl, and R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently chosen from a C1-C4 alkyl and n=1-6. The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.

Abstract: Disclosed herein is an underlayer composition, wherein the underlayer is typically used for promoting the formation of self assembled structures, and wherein the underlayer formulation comprises: (a) a polymer comprising at least one monomer repeat unit having the structure (I) wherein X is a crosslinking group chosen from and wherein n is 0-5, p is 0-5, q is 1-2, m is 1-2 and R is H, C1-C4alkyl or tri(C1-C4alkyl)silyl; (b) at least one thermal acid generator; and (c) a solvent. The invention further relates to methods of making and using the composition.

Abstract: The present invention relates to a novel antireflective coating composition comprising a polymer obtained from a reaction product of at least one amino compound chosen from the group consisting of a polymer with repeat unit of structure (1), structure (2) and mixtures thereof reacted with a hydroxy compound chosen from the group consisting of structure (3), structure (4) and mixtures thereof, and, a thermal acid generator. The invention also relates to a process for using the novel composition in lithography.

Abstract: The present invention relates to novel antireflective coating compositions and their use in image processing. The compositions self-segregate to form hydrophobic surfaces of the novel antireflective coating compositions, the composition being situated between a reflective substrate and a photoresist coating. Such compositions are particularly useful in the fabrication of semiconductor devices by photolithographic techniques. The present invention also related to self-segregating polymers useful in image processing and processes of their use.

Abstract: Disclosed herein is a formulation for depositing a cured underlayer for promoting the formation of self assembled structures. The underlayer comprises: (a) a polymer comprising at least one pendant vinyl ether monomer repeat unit having the structure, (I): wherein R is chosen from H, C1-C4 alkyl, or halogen, and W is a divalent group chosen from C1-C6 alkylene, C6-C20 arylene, benzylene, or C2-C20 alkyleneoxyalkylene; (ii) optional thermal acid generator; and (c) a solvent. The invention also relates to processes of forming a pattern using the underlayer.

Abstract: Disclosed herein is an underlayer composition, wherein the underlayer is typically used for promoting the formation of self assembled structures, and wherein the underlayer formulation comprises: (a) a polymer comprising at least one monomer repeat unit having the structure (I) wherein X is a crosslinking group chosen from and wherein n is 0-5, p is 0-5, q is 1-2, m is 1-2 and R is H, C1-C4alkyl or tri (C1-C4alkyl)silyl; (b) at least one thermal acid generator; and (c) a solvent. The invention further relates to methods of making and using the composition.