Patent number: 10431736
Abstract: A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
Type:
Grant
Filed:
June 29, 2018
Date of Patent:
October 1, 2019
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventors:
Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang, Ru-Ying Tong, Jodi Mari Iwata
Publication number: 20180323371
Abstract: A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
Type:
Application
Filed:
June 29, 2018
Publication date:
November 8, 2018
Inventors:
Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang, Ru-Ying Tong, Jodi Mari Iwata