Abstract: A method to convert a reclaim wafer into a semiconductor wafer, suitable as starting material for semiconductor fabrication, with a front surface, a back surface and an edge. At least one of the two surfaces bearing foreign material which originates from at least one process for the fabrication of semiconductor components.

Abstract: There is a process for producing a semiconductor wafer having a front surface and a back surface and a polished edge, in which the semiconductor wafer is subjected to polishing on both sides.

Abstract: The invention relates to catalysts for the catalytic post-combustion of exhaust gases containing carbon monoxide and/or oxidizable organic compounds and processes for their production. The catalysts contain 70 to 99% wt., calculated as TiO.sub.2, of a titanium oxide component, 1 to 30% wt., calculated as V.sub.2 O.sub.5 of a vanadium oxide component and 0.01 to 0.9% wt., calculated as noble metal, of a noble metal component from one or more nobel metal compounds of nobel metals of the 8th sub-group. The catalysts are characterized by a low starting (.ltoreq.220.degree. CC.) and operating temperature and their ability to oxidize even slight pollution of the exhaust gas with oxygen-containing or free aliphatic and aromatic hydrocarbons and carbon monoxide in the presence of gases containing molecular oxygen almost quantitatively to the substantially ecologically acceptable products carbon dioxide and water.

Abstract: The invention relates to cycloolefinic complexes of platinum, processes for preparing the same from platinum(II) compounds and cyclolefins having at least 12 ring carbon atoms and at least two aliphatic non-cumulated carbon-carbon double bonds and their use as a catalyst for the addition of Si-bonded hydrogen to an aliphatic multiple bond.

Abstract: A process for preparing poly-(imidesiloxanes) which comprises reacting an N,N'-dialkenyldiimide with an organosilicon compound containing two Si-bonded hydrogen atoms in the presence of a catalyst which promotes the addition of Si-bonded hydrogen to an aliphatic multiple bond.