Abstract: The present disclosure describes a method that mitigates the formation of facets in source/drain silicon germanium (SiGe) epitaxial layers. The method includes forming an isolation region around a semiconductor layer and a gate structure partially over the semiconductor layer and the isolation region. Disposing first photoresist structures over the gate structure, a portion of the isolation region, and a portion of the semiconductor layer and doping, with germanium (Ge), exposed portions of the semiconductor layer and exposed portions of the isolation region to form Ge-doped regions that extend from the semiconductor layer to the isolation region. The method further includes disposing second photoresist structures over the isolation region and etching exposed Ge-doped regions in the semiconductor layer to form openings, where the openings include at least one common sidewall with the Ge-doped regions in the isolation region. Finally the method includes growing a SiGe epitaxial stack in the openings.

Abstract: Bulk semiconductor substrates configured to exhibit semiconductor-on-insulator (SOI) behavior, and corresponding methods of fabrication, are disclosed herein. An exemplary bulk substrate configured to exhibit SOI behavior includes a first isolation trench that defines a channel region of the bulk substrate and a second isolation trench that defines an active region that includes the channel region. The first isolation trench includes a first isolation trench portion and a second isolation trench portion disposed over the first isolation trench portion. A first isolation material fills the first isolation trench portion, and an epitaxial material fills the second isolation trench portion. The epitaxial material is disposed on the first isolation material. A second isolation material fills the second isolation trench. A portion of the bulk substrate underlying the first isolation trench and the channel region is configured to have a higher resistance than the bulk substrate.

Abstract: An integrated circuit structure includes a semiconductor substrate, an active area, a gate electrode, and a butted contact. The active area is oriented in a first direction and has at least one tooth portion extending in a second direction in the semiconductor substrate. The gate electrode overlies the active area and extends in the second direction. The butted contact has a first portion above the gate electrode and a second portion above the active area. A portion of the second portion of the butted contact lands on the tooth portion.

Abstract: The present disclosure describes a fabrication method that prevents divots during the formation of isolation regions in integrated circuit fabrication. In some embodiments, the method of forming the isolation regions includes depositing a protective layer over a semiconductor layer; patterning the protective layer to expose areas of the semiconductor layer; depositing an oxide on the exposed areas the semiconductor layer and between portions of the patterned protective layer; etching a portion of the patterned protective layer to expose the semiconductor layer; etching the exposed semiconductor layer to form isolation openings in the semiconductor layer; and filling the isolation openings with a dielectric to form the isolation regions.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate. The method includes forming an isolation structure in the semiconductor substrate. The isolation structure surrounds a first active region and a second active region of the semiconductor substrate. The method includes forming a semiconductor strip structure over the semiconductor substrate. The semiconductor strip structure extends across the first active region, the second active region, and the isolation structure between the first active region and the second active region, the semiconductor strip structure has a P-type doped region, an N-type doped region, and a spacing region. The method includes performing an implantation process over the spacing region. The method includes forming a metal silicide layer over the semiconductor strip structure to cover the P-type doped region, the N-type doped region, and the spacing region.

Abstract: A semiconductor structure includes a first contact pad over a passivation layer, wherein the first contact pad is in a circuit region. The semiconductor structure further includes a plurality of second contact pads over the passivation layer, wherein each second contact pad of the plurality of second contact pads is in a non-circuit region. The semiconductor structure further includes a first buffer layer over the first contact pad and over a first second contact pad of the plurality of second contact pads. The semiconductor structure further includes a second buffer layer over the first buffer layer, the first contact pad, the first second contact pad and a portion of a second second contact pad of the plurality of second contact pads, wherein the second buffer layer exposes a portion of the second second contact pad of the plurality of second contact pads.

Abstract: Bulk semiconductor substrates configured to exhibit semiconductor-on-insulator (SOI) behavior, and corresponding methods of fabrication, are disclosed herein. An exemplary bulk substrate configured to exhibit SOI behavior includes a first isolation trench that defines a channel region of the bulk substrate and a second isolation trench that defines an active region that includes the channel region. The first isolation trench includes a first isolation trench portion and a second isolation trench portion disposed over the first isolation trench portion. A first isolation material fills the first isolation trench portion, and an epitaxial material fills the second isolation trench portion. The epitaxial material is disposed on the first isolation material. A second isolation material fills the second isolation trench. A portion of the bulk substrate underlying the first isolation trench and the channel region is configured to have a higher resistance than the bulk substrate.

Abstract: The present disclosure relates to a semiconductor structure includes a substrate with a top surface and first and second devices formed on the top surface of the substrate. The semiconductor structure also includes a deep isolation structure formed in the substrate and between the first and second devices. The deep isolation structure includes a top portion formed at the top surface and having a top width and a bottom surface having a bottom width larger than the top width.

Abstract: The present disclosure describes a fabrication method that prevents divots during the formation of isolation regions in integrated circuit fabrication. In some embodiments, the method of forming the isolation regions includes depositing a protective layer over a semiconductor layer; patterning the protective layer to expose areas of the semiconductor layer; depositing an oxide on the exposed areas the semiconductor layer and between portions of the patterned protective layer; etching a portion of the patterned protective layer to expose the semiconductor layer; etching the exposed semiconductor layer to form isolation openings in the semiconductor layer; and filling the isolation openings with a dielectric to form the isolation regions.

Abstract: Negatively sloped isolation structures are formed on a semiconductor substrate to isolate devices from one another. The negatively sloped isolation structures have a top critical dimension which is smaller than a bottom critical dimension. The negatively sloped isolation structures may penetrate through an insulator layer of a silicon-on-insulator structure arrangement.

Abstract: The present disclosure describes a fabrication method that prevents divots during the formation of isolation regions in integrated circuit fabrication. In some embodiments, the method of forming the isolation regions includes depositing a protective layer over a semiconductor layer; patterning the protective layer to expose areas of the semiconductor layer; depositing an oxide on the exposed areas the semiconductor layer and between portions of the patterned protective layer; etching a portion of the patterned protective layer to expose the semiconductor layer; etching the exposed semiconductor layer to form isolation openings in the semiconductor layer; and filling the isolation openings with a dielectric to form the isolation regions.

Abstract: The present disclosure describes a fabrication method that can form air-gaps in shallow trench isolation structures (STI) structures. For example, the method includes patterning a semiconductor layer over a substrate to form semiconductor islands and oxidizing the sidewall surfaces of the semiconductor islands to form first liners on the sidewall surfaces. Further, the method includes depositing a second liner over the first liners and the substrate and depositing a first dielectric layer between the semiconductor islands. The second liner between the first dielectric layer and the first liners is removed to form openings between the first dielectric layer and the first liners. A second dielectric layer is deposited over the first dielectric layer to enclose the openings and form air-gaps between the first dielectric layer and the first liners so that the gaps are positioned along the first liners.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate. The method includes forming an isolation structure in the semiconductor substrate. The isolation structure surrounds a first active region and a second active region of the semiconductor substrate. The method includes forming a semiconductor strip structure over the semiconductor substrate. The semiconductor strip structure extends across the first active region, the second active region, and the isolation structure between the first active region and the second active region, the semiconductor strip structure has a P-type doped region, an N-type doped region, and a spacing region. The method includes performing an implantation process over the spacing region. The method includes forming a metal silicide layer over the semiconductor strip structure to cover the P-type doped region, the N-type doped region, and the spacing region.

Abstract: The present disclosure relates to a semiconductor structure includes a substrate with a top surface and first and second devices formed on the top surface of the substrate. The semiconductor structure also includes a deep isolation structure formed in the substrate and between the first and second devices. The deep isolation structure includes a top portion formed at the top surface and having a top width and a bottom surface having a bottom width larger than the top width.

Abstract: Negatively sloped isolation structures are formed on a semiconductor substrate to isolate devices from one another. The negatively sloped isolation structures have a top critical dimension which is smaller than a bottom critical dimension. The negatively sloped isolation structures may penetrate through an insulator layer of a silicon-on-insulator structure arrangement.

Abstract: Bulk semiconductor substrates configured to exhibit semiconductor-on-insulator (SOI) behavior, and corresponding methods of fabrication, are disclosed herein. An exemplary bulk substrate configured to exhibit SOI behavior includes a first isolation trench that defines a channel region of the bulk substrate and a second isolation trench that defines an active region that includes the channel region. The first isolation trench includes a first isolation trench portion and a second isolation trench portion disposed over the first isolation trench portion. A first isolation material fills the first isolation trench portion, and an epitaxial material fills the second isolation trench portion. The epitaxial material is disposed on the first isolation material. A second isolation material fills the second isolation trench. A portion of the bulk substrate underlying the first isolation trench and the channel region is configured to have a higher resistance than the bulk substrate.

Abstract: The present disclosure describes a method that mitigates the formation of facets in source/drain silicon germanium (SiGe) epitaxial layers. The method includes forming an isolation region around a semiconductor layer and a gate structure partially over the semiconductor layer and the isolation region. Disposing first photoresist structures over the gate structure, a portion of the isolation region, and a portion of the semiconductor layer and doping, with germanium (Ge), exposed portions of the semiconductor layer and exposed portions of the isolation region to form Ge-doped regions that extend from the semiconductor layer to the isolation region. The method further includes disposing second photoresist structures over the isolation region and etching exposed Ge-doped regions in the semiconductor layer to form openings, where the openings include at least one common sidewall with the Ge-doped regions in the isolation region. Finally the method includes growing a SiGe epitaxial stack in the openings.

Abstract: The present disclosure describes a fabrication method that can form air-gaps in shallow trench isolation structures (STI) structures. For example, the method includes patterning a semiconductor layer over a substrate to form semiconductor islands and oxidizing the sidewall surfaces of the semiconductor islands to form first liners on the sidewall surfaces. Further, the method includes depositing a second liner over the first liners and the substrate and depositing a first dielectric layer between the semiconductor islands. The second liner between the first dielectric layer and the first liners is removed to form openings between the first dielectric layer and the first liners. A second dielectric layer is deposited over the first dielectric layer to enclose the openings and form air-gaps between the first dielectric layer and the first liners so that the gaps are positioned along the first liners.

Abstract: The present disclosure describes a fabrication method that can form air-gaps in shallow trench isolation structures (STI) structures. For example, the method includes patterning a semiconductor layer over a substrate to form semiconductor islands and oxidizing the sidewall surfaces of the semiconductor islands to form first liners on the sidewall surfaces. Further, the method includes depositing a second liner over the first liners and the substrate and depositing a first dielectric layer between the semiconductor islands. The second liner between the first dielectric layer and the first liners is removed to form openings between the first dielectric layer and the first liners. A second dielectric layer is deposited over the first dielectric layer to enclose the openings and form air-gaps between the first dielectric layer and the first liners so that the gaps are positioned along the first liners.

Abstract: Negatively sloped isolation structures are formed on a semiconductor substrate to isolate devices from one another. The negatively sloped isolation structures have a top critical dimension which is smaller than a bottom critical dimension. The negatively sloped isolation structures may penetrate through an insulator layer of a silicon-on-insulator structure arrangement.