Abstract: A hybrid shaft assembly for use in controlled atmosphere chambers, such as by way of example heated pedestals for semiconductor manufacturing, includes a substrate, a hub having an upper portion and a lower portion, the upper portion being secured to the substrate with an upper joining layer, and a shaft secured to the lower portion of the hub with a lower joining layer. The shaft comprises a material having a thermal conductivity lower than a material of the hub and a material of the substrate.

Abstract: A method for joining ceramic pieces includes placing a layer of titanium on each of a first ceramic piece and a second ceramic piece; placing a layer of nickel on each of the layers of titanium; assembling the first ceramic piece and the second ceramic piece with the layers of nickel and the layers of titanium between the ceramic pieces; pressing the first ceramic piece and the second ceramic piece with the layers of nickel and the layers of titanium together; heating the first ceramic piece, the second ceramic piece, the layers of nickel, and the layers of titanium to a joining temperature in a vacuum; and cooling the first ceramic piece, the second ceramic piece, the layers of nickel, and the layers of titanium to create a hermetic seal between the first ceramic piece and the second ceramic piece.

Abstract: A layered assembly for use in a controlled atmosphere chamber includes a plurality of substrates and an electrically functioning layer embedded between two adjacent substrates of the plurality of substrates, the electrically functioning layer being a material configured to secure the two adjacent substrates together using a solid-state bonding process. An electrical termination area is integral with the electrically functioning layer, and a peripheral sealing band is embedded between and extends around a periphery of internal faces of the two adjacent substrates, the peripheral sealing band being a material configured to secure and seal the two adjacent substrates together using the solid-state bonding process. Dielectric regions are present between the two adjacent substrates and between edge boundaries of the electrically functioning layer, the dielectric regions being sealed between the two adjacent substrates by the peripheral sealing band.

Abstract: A method for the joining of ceramic pieces includes applying a layer of titanium on a first ceramic piece and applying a layer of titanium on a second ceramic piece; applying a layer of nickel on each of the layers of titanium on the first ceramic piece and the second ceramic piece; applying a layer of nickel phosphorous to each of the layers of nickel on the first ceramic piece and the second ceramic piece; assembling the first ceramic piece and the second ceramic piece with the layers of titanium, nickel, and nickel phosphorous therebetween; pressing the layer of nickel phosphorous of the first ceramic piece against the layer of nickel phosphorous of the second ceramic piece; heating the first ceramic piece and the second ceramic piece to a joining temperature in a vacuum; and cooling the first ceramic piece and the second ceramic piece. A hermetic seal is formed between the first ceramic piece and the second ceramic piece.

Abstract: A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500 C to 650 C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be impervious to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650 C and less than 1200 C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.

Abstract: An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

Abstract: A method for the joining of ceramic pieces includes applying a layer of titanium on a first ceramic piece and applying a layer of titanium on a second ceramic piece; applying a layer of nickel on each of the layers of titanium on the first ceramic piece and the second ceramic piece; applying a layer of nickel phosphorous to each of the layers of nickel on the first ceramic piece and the second ceramic piece; assembling the first ceramic piece and the second ceramic piece with the layers of titanium, nickel, and nickel phosphorous therebetween; pressing the layer of nickel phosphorous of the first ceramic piece against the layer of nickel phosphorous of the second ceramic piece; heating the first ceramic piece and the second ceramic piece to a joining temperature in a vacuum; and cooling the first ceramic piece and the second ceramic piece. A hermetic seal is formed between the first ceramic piece and the second ceramic piece.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

Abstract: A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500 C to 650 C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be impervious to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650 C and less than 1200 C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.

Abstract: An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C.

Abstract: A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500 C to 650 C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be impervious to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650 C and less than 1200 C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.

Abstract: An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

Abstract: An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

Abstract: An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries.

Abstract: An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C. to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C. to 750 C.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.

Abstract: An electrical termination unit or feedthrough which may be used for routing electrical conductors through a chamber wall, or otherwise across a barrier between isolated atmospheric conditions. The electrical termination unit may have aluminum as the interface material to the chamber interface and may utilize a ceramic insulator. The electrical termination unit may have the aluminum used as the interface brazed directly to a ceramic surface of the insulator. The aluminum that forms the chamber interface may be formed within a hollow ceramic tube in the same process step that brazes the aluminum to the ceramic tube with a hermetic joint. Machining subsequent to the brazing of the aluminum to the ceramic insulator may allow for achievement of the final form desired. A method for manufacturing such an electrical termination unit.

Abstract: A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500 C to 650 C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be impervious to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650 C and less than 1200 C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.

Abstract: An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C to 750 C.

Abstract: Methods of manufacturing photovoltaic modules are provided. One method includes providing a substrate and depositing a lower electrode above the substrate. The method also includes depositing a lower stack of microcrystalline silicon layers above the lower electrode, depositing an upper stack of amorphous silicon layers above the lower stack of microcrystalline silicon layers, and depositing an upper electrode above the upper stack of amorphous silicon layers. At least one of the lower stack and the upper stack includes an N-I-P stack of silicon layers having an n-doped silicon layer, an intrinsic silicon layer, and a p-doped silicon layer. The intrinsic silicon layer has an energy band gap that is reduced by depositing the intrinsic silicon layer at a temperature of at least 250 degrees Celsius.