Abstract: A photovoltaic device includes first and second photovoltaic cells, with each of the first and second photovoltaic cells having a substrate, a lower electrode disposed above the substrate along a deposition axis and that includes a conductive light transmissive layer, one or more semiconductor layers disposed above the substrate along the deposition axis, and an upper electrode disposed above the one or more semiconductor layers along the deposition axis. The semiconductor layers convert incident light into an electric current. The first and second photovoltaic cells are separated by first and second separation gaps. The first separation gap extend along the deposition axis through the lower electrode from the substrate and the second separation gap extends from a deposition surface of the light transmissive layer of the lower electrode and through a remainder of the lower electrode and the one or more semiconductor layers along the deposition axis.

Abstract: A photovoltaic device includes a supporting layer, a semiconductor layer stack, and a conductive and light transmissive layer. The supporting layer is proximate to a bottom surface of the device. The semiconductor layer stack includes first and second semiconductor sub-layers, with the second sub-layer having a crystalline fraction of at least approximately 85%. A conductive and light transmissive layer between the supporting layer and the semiconductor layer stack, where an Ohmic contact exists between the first semiconductor sub-layer and the conductive and light transmissive layer.

Abstract: A photovoltaic device includes: a substrate; lower and upper electrode layers disposed above the substrate; and a semiconductor layer disposed between the lower and upper electrode layers, the semiconductor layer absorbing incident light to excite electrons from the semiconductor layer, wherein the semiconductor layer includes a built-in bypass diode extending between and coupled with the lower and upper electrode layers, the bypass diode permitting electric current to flow through the bypass diode when a reverse bias is applied across the lower and upper electrode layers.

Abstract: A monolithically-integrated photovoltaic module is provided. The module includes an electrically insulating substrate, a lower stack of microcrystalline silicon layers above the substrate, a middle stack of amorphous silicon layers above the lower stack, an upper stack of amorphous silicon layers above the middle stack, and a light transmissive cover layer above the upper stack. An energy band gap of each of the lower, middle and upper stacks differs from one another such that a different spectrum of incident light is absorbed by each of the lower, middle and upper stacks.

Abstract: A method of manufacturing a photovoltaic module is provided. The method includes providing an electrically insulating substrate and a lower electrode, depositing a lower stack of silicon layers above the lower electrode, and depositing an upper stack of silicon layers above the lower stack. The lower and upper stacks include N-I-P junctions. The lower stack has an energy band gap of at least 1.60 eV while the upper stack has an energy band gap of at least 1.80 eV. The method also includes providing an upper electrode above the upper stack. The lower and upper stacks convert incident light into an electric potential between the upper and lower electrodes with the lower and upper stacks converting different portions of the light into the electric potential based on wavelengths of the light.

Abstract: A monolithically-integrated photovoltaic module is provided. The module includes an insulating substrate and a lower electrode above the substrate. The method also includes a lower stack of microcrystalline silicon layers above the lower electrode, an upper stack of amorphous silicon layers above the lower stack, and an upper electrode above the upper stack. The upper and lower stacks of silicon layers have different energy band gaps. The module also includes a built-in bypass diode vertically extending in the upper and lower stacks of silicon layers from the lower electrode to the upper electrode. The built-in bypass diode includes portions of the lower and upper stacks that have a greater crystalline portion than a remainder of the lower and upper stacks.

Abstract: A photovoltaic device includes a supporting layer, a semiconductor layer stack, and a conductive and light transmissive layer. The supporting layer is proximate to a bottom surface of the device. The semiconductor layer stack includes first and second semiconductor sub-layers, with the second sub-layer having a crystalline traction of at least approximately 85%. A conductive and light transmissive layer between the supporting layer and the semiconductor layer stack, where an Ohmic contact exists between the first semiconductor sub-layer and the conductive and light transmissive layer.

Abstract: One or more embodiments of the presently described invention provide a method for fabricating an all-back contact photovoltaic cell. The method includes the steps of depositing a semiconductor layer on a non-opaque substrate, increasing a level of crystallinity of the semiconductor layer by exposing it to a focused beam of energy, doping the semiconductor layer with first and second dopants on one side to create at least two doped regions, and providing electrical contacts to the doped regions by depositing a conductive layer on the semiconductor layer so that the electrical contacts are on the same side of the semiconductor layer while incident light strikes the layer from an opposing side.