Abstract: A photovoltaic device includes a supporting layer, a semiconductor layer stack, and a conductive and light transmissive layer. The supporting layer is proximate to a bottom surface of the device. The semiconductor layer stack includes first and second semiconductor sub-layers, with the second sub-layer having a crystalline traction of at least approximately 85%. A conductive and light transmissive layer between the supporting layer and the semiconductor layer stack, where an Ohmic contact exists between the first semiconductor sub-layer and the conductive and light transmissive layer.

Abstract: One or more embodiments of the presently described invention provide a method for fabricating an all-back contact photovoltaic cell. The method includes the steps of depositing a semiconductor layer on a non-opaque substrate, increasing a level of crystallinity of the semiconductor layer by exposing it to a focused beam of energy, doping the semiconductor layer with first and second dopants on one side to create at least two doped regions, and providing electrical contacts to the doped regions by depositing a conductive layer on the semiconductor layer so that the electrical contacts are on the same side of the semiconductor layer while incident light strikes the layer from an opposing side.