Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

Abstract: Provided is a display device including a base layer, a circuit layer above the base layer, and an element layer above the circuit layer, and including a light-emitting element including a first pixel electrode electrically connected to the circuit layer, a light-emitting layer above the first pixel electrode, and a second pixel electrode above the light-emitting layer, and a light-receiving element adjacent to the light-emitting element, and including a first sensing electrode electrically connected to the circuit layer, a photoelectric conversion layer above the first sensing electrode, and a second sensing electrode above the photoelectric conversion layer and having a thickness that is different than a thickness of the second pixel electrode.

Abstract: A stator includes a split-core assembly that includes a split core, a bobbin, a coil, and a terminal holder. The terminal holder has an insulating protrusion, and when two split-core assemblies are coupled to each other, the insulating protrusion of any one terminal holder overlaps the other terminal holder.

Abstract: A double sided meta lens includes a substrate having a first surface and a second surface facing each other, a first meta lens that includes a plurality of first nanostructures arranged on the first surface of the substrate and exhibits a first phase profile, and a second meta lens that includes a plurality of second nanostructures arranged on the second surface of the substrate and exhibits a second phase profile. The first phase profile may be configured such that a central region of the first meta lens operates as a convex lens and a peripheral region of the first meta lens operates as a concave lens, and the second phase profile may correspond to a focusing lens and has a section in which an absolute value of a phase slope increases with distance from a center of the second meta lens.

Abstract: The present invention relates to a composition for the prevention, improvement/amelioration or treatment of allergic disease containing an extract of Taxus cuspidata as an active ingredient, and more specifically, to a composition for the prevention, improvement/amelioration or treatment of allergic respiratory disease comprising an ethanol extract of Taxus cuspidata or a fraction thereof as an active ingredient. In the present invention, the effectiveness of Taxus cuspidata extract in treating allergic respiratory disease was confirmed in an animal model of allergic asthma, and the anti-allergic efficacy of compounds isolated from Taxus cuspidata ethanol extract was confirmed. Therefore, Taxus cuspidata extract of the present invention can be useful as a composition for the prevention, amelioration or treatment of allergic respiratory diseases, particularly allergic asthma or allergic bronchitis.

Abstract: The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.

Abstract: According to various embodiments, an aerosol generating device includes a plurality of pad units, each including a first end surface, a second end surface formed an opposite side of the first end surface, a front surface formed between the first end surface and the second end surface, and a rear surface formed on an opposite side of the front surface, a heating unit disposed on the front surface of each of the plurality of pad units, and a hinge unit disposed between the plurality of pad units, wherein the aerosol generating device is transformable such that the front surface of each of the plurality of pad units faces toward a central axis.

Abstract: The present invention relates to a transistor based on a compact drain and hetero-material structure. The transistor according to one embodiment includes substrates including a buried oxide (BOX) layer and active layers formed on the buried oxide layer; an insulating layer formed on the substrates; and electrode layers formed on the insulating layer and including a drain electrode, a gate electrode, and a source electrode. The active layers include a first semiconductor layer corresponding to a drain region, a second semiconductor layer corresponding to a channel region, and a third semiconductor layer corresponding to a source region. The first semiconductor layer is formed to be thinner than the second semiconductor layer, and the third semiconductor layer is formed of a material having a band gap lower than that of the second semiconductor layer.

Abstract: The present invention relates to a thyristor having a vertical structure and a cross-point memory array including the same. The thyristor having a vertical structure according to one embodiment may include a semiconductor core with an insulating film formed on the outer peripheral surface thereof, and a plurality of metal layers formed on the insulating film. In the semiconductor core, at least one layer of a base layer and an emitter layer may be formed on a region corresponding to each of the metal layers based on the charge plasma phenomenon due to the difference in work function with the metal layers.

Abstract: Provided are a die pickup module and a die bonding apparatus including the same. The die pickup module includes a wafer stage for supporting a wafer including dies attached on a dicing tape, a die ejector arranged under the dicing tape and for separating a die to be picked up from the dicing tape, a non-contact picker for picking up the die in a non-contact manner so as not to contact a front surface of the die, a vertical driving unit for moving the non-contact picker in a vertical direction to pick up the die and an inverting driving unit for inverting the non-contact picker to invert a die picked up by the non-contact picker.

Abstract: A closed-type medicine mixing extraction device for mixing and extracting medicines stored in a first vial and a second vial, respectively, includes a first needle part and a second needle part, which are able to be fitted to the first vial and the second vial, respectively, a connection port to which a syringe is able to be coupled, and a ventilation port through which air is able to enter and exit, wherein the first needle part and the second needle part communicate with each other through a direct communication flow path, the first needle part and the connection port communicate with each other through an extraction flow path, and the second needle part and the ventilation port communicate with each other through a ventilation flow path. Thus, different types of medicines stored in vials, respectively, are able to be hygienically, safely, and rapidly mixed and extracted.

Abstract: Disclosed is a memory device including a lower electrode, a seed layer, a synthetic antiferromagnetic layer, a magnetic tunnel junction, and an upper electrode laminated on a substrate, wherein the magnetic tunnel junction includes a pinned layer, a tunnel barrier layer, and free layers, wherein the free layers include a first free layer, a spacer layer, a coupling layer, a buffer layer, and a second free layer laminated in sequential order.

Abstract: A multi-vial adapter includes an adapter body including at least two body parts, which are connected to each other at a certain angle, a head part, which protrudes upward from a connection portion between the body parts, and at least two spike parts, which extend downward from the body parts, respectively, at positions spaced a certain distance from the connection portion, and at least two adapter caps which are physically fastened and fixed to the body parts, respectively, and through which the spike parts respectively pass. The adapter body is formed by an injection molding process such that the head part, the body parts, and the spike parts are integrated with each other, and a liquid drug flow path that guides the movement of a liquid drug from the respective spike parts to the head part via the respective body parts may be formed inside the adapter body.

Abstract: Disclosed is an artificial synapse device including an amorphous carbon oxide-based resistance change memory device and a method of fabricating the same, and more particularly to a technology for providing an artificial synapse device capable of implementing the characteristics of biological synapses responsible for memory and information transfer in the human brain using a resistance change memory device. More particularly, the artificial synapse device according to an embodiment of the provided includes a first electrode; a second electrode disposed to face the first electrode; and a switching layer formed of an amorphous carbon oxide deposited by injecting oxygen when sputtering carbon into a target between the first electrode and the second electrode, wherein the artificial synapse device has synaptic characteristics wherein a value of an output current changes gradually when a same voltage of either set voltage or reset voltage is repeatedly applied to the first electrode.

Abstract: A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.

Abstract: An organic light-emitting display device includes quantum dots and an RGB color filter layer having quantum dots and thus is capable of removing 100% of interference among red, green, and blue color filters.

Abstract: Disclosed are quantum dots based on a graded multishell structure and a method of manufacturing the same. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core, inter shells surrounding the core, and an outer shell surrounding the inter shells, wherein the concentrations of compounds composing the inter shells are changed stepwise from the core to the outer shell.

Abstract: Disclosed are an etching composition for selectively etching a silicon nitride, an etching method using the same, and a manufacturing method of a semiconductor device. The disclosed etching composition is an etching composition capable of increasing an etching selectivity for a silicon nitride over a silicon oxide and a polycrystalline silicon, and may include an inorganic acid, a solvent, and an additive, and the additive may include one or both of a compound containing an epoxy group and a compound containing a vinyl group. The compound containing the epoxy group may include one or more of glycid, allyl glycidyl ether, epichlorohydrin, 1,2-epoxy-3-phenoxypropane and 2,3-epoxypropyl benzene. The compound containing the vinyl group may include one or both of vinyl bromide and phenyl vinyl ether.

Abstract: An image generating device includes a support unit configured to support an object, an irradiation unit configured to irradiate the object disposed on the support unit with light, a light receiving unit configured to receive light returning from the object disposed on the support unit, and a control unit configured to generate a light irradiation signal for controlling the irradiation unit and a light-receiving region driving signal for controlling the light receiving unit, wherein the irradiation unit includes a first irradiation unit for irradiating a first region of the object with light and a second irradiation unit for irradiating a second region of the object with light, the light receiving unit includes a first light-receiving region and a second light-receiving region, the first light-receiving region and the second light-receiving region each include a plurality of pixels and are disposed at different positions on the light receiving unit.

Abstract: Disclosed are quantum dots including a luminescent dopant. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core and a shell surrounding the core, wherein at least one of an interior of the core and an interface between the core and the shell is doped with a luminescent group I dopant.