Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.

Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.

Abstract: Disclosed is a memory device. A memory device according to an embodiment of the present invention includes a memory device including a substrate; and a lower electrode, seed layer, lower synthetic antiferromagnetic layer, magnetic tunnel junction, upper synthetic antiferromagnetic layer, and upper electrode that are laminated on the substrate, wherein the magnetic tunnel junction includes a lower pinned layer, lower tunnel barrier layer, lower free layer, separation layer, upper free layer, upper tunnel barrier layer and upper pinned layer that are sequentially laminated.

Abstract: An electronic device that interacts with a head mounted display (HMD) device is provided. The electronic device includes a communication interface, a memory, a display, and at least one processor electrically connected to the communication interface, the memory, and the display. The at least one processor is configured to receive an event signal related to sharing of contents with at least one external device or receive request information related to sharing of contents from the at least one external device through the communication interface, identify attribute information of the at least one external device, convert a format of some of one or more contents, which are stored in the memory, such that the format of one or more contents corresponds to the identified attribute information, and transmit the contents to the at least one external.

Abstract: The present invention relates to an electronic device, and to an electronic device and a method for providing service information. To this end, the electronic device of the present invention comprises a first communication module, a second communication module, a memory for storing location information of the electronic device, and a processor, wherein the processor can be configured to: acquire, from a first external electronic device located at a near distance from the electronic device, identification information corresponding to the place here the first external electronic device is located, by using the first communication module; transmit, to a second external electronic device, the identification information and the location information, by using the second communication module; and receive, from the second external electronic device, service information corresponding to the identification information, by using the second communication module.

Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.

Abstract: Provided are control methods of a decryption key storage server, a biometric information storage server, and a matching server in an authentication system.

Abstract: The present invention provides a memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. According to the present invention, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.

Abstract: A display device includes a display panel and a first sensor configured to sense a position of a touch of a user and a second sensor configured to sense a pressure of the touch. The first sensor and the second sensor may be provided inside or surrounding an area of the display panel. The second sensor includes a first conductor, a second conductor spaced apart from the first conductor, and configured to form capacitance with the first conductor, and one or more variable resistance elements connected with the first conductor.

Abstract: An electronic device and method are disclosed herein. The electronic device includes a display, a memory and a processor. The processor implements the method, including displaying a first image through the display, storing screen information associated with the first image in a memory, detecting whether the electronic device is mounted on the wearable device, generating a second image corresponding to a view point of the first image based on the stored screen information, and displaying the generated second image through the display.

Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic (SyAF) layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, SyAF layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the SyAF layers to grow in the FCC (111) direction.

Abstract: A user terminal and a control method thereof are provided. The user terminal includes a communicator configured to communicate with a server; a display configured to display a message screen including a plurality of messages exchanged between the user terminal and the server; and a processor configured to control the display to display the plurality of messages on the message screen in an individually selectable manner, and based on at least one message of the plurality of messages being selected on the message screen and at least one share target, with which to share the at least some of the plurality of messages, being selected, control the communicator to transmit, to the server, information regarding the at least one message of the plurality of messages and the at least one share target.

Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.

Abstract: A memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. The lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.

Abstract: The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic antiferromagnetic layer, and upper electrode formed on the substrate.

Abstract: The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.

Abstract: A control method of an interaction robot according to an embodiment of the present invention comprises the steps of: receiving a user input, by the interaction robot; determining a robot response corresponding to the received user input, by the interaction robot; and outputting the determined robot response, by the interaction robot, wherein the step of outputting the determined robot response includes the steps of: outputting a color matching to the received user input or the determined robot response to a light emitting unit, by the interaction robot; and outputting a motion matching to the received user input or the determined robot response to any one or more among a first driving unit and a second driving unit, by the interaction robot.

Abstract: A user terminal and a control method thereof are provided. The user terminal includes a communicator configured to communicate with a server; a display configured to display a message screen including a plurality of messages exchanged between the user terminal and the server; and a processor configured to control the display to display the plurality of messages on the message screen in an individually selectable manner, and based on at least one message of the plurality of messages being selected on the message screen and at least one share target, with which to share the at least some of the plurality of messages, being selected, control the communicator to transmit, to the server, information regarding the at least one message of the plurality of messages and the at least one share target.

Abstract: The present invention discloses a two-terminal vertical 1T-DRAM and a method of fabricating the same. According to one embodiment of the present invention, the two-terminal vertical 1T-DRAM includes a cathode layer formed of a first-type high-concentration semiconductor layer; a base region including a second-type low-concentration semiconductor layer formed on the cathode layer and a first-type low-concentration semiconductor layer formed on the second-type low-concentration semiconductor layer; and an anode layer formed of a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer.

Abstract: A method for providing a service by an electronic device according to various embodiments may comprise the steps of: obtaining biometric information of a user; determining at least one service associated with the biometric information out of a plurality of services that the electronic device supports; and providing the determined at least one service.