Abstract: Disclosed is a method for forming a microstructure pattern based on a solution process. The method includes the steps of forming a photoresist pattern on a hydrophilic substrate; forming a self-assembled monolayer on the hydrophilic substrate formed thereon with the photoresist pattern; forming a self-assembled monolayer pattern by removing the photoresist pattern; coating a dewetting solution on the hydrophilic substrate formed thereon with the self-assembled monolayer pattern such that the dewetting solution is coated only on a hydrophilic surface of the hydrophilic substrate exposed through the self-assembled monolayer pattern by primary dewetting; and drying the dewetting solution coated on the hydrophilic surface of the hydrophilic substrate and allowing the dewetting solution to be hardened after flowing to an edge of the dewetting solution by secondary dewetting such that only a solute of the dewetting solution remains.

Abstract: Disclosed are a nanostructure array substrate, a method for fabricating the same, and a dye-sensitized solar cell by using the same. The nanostructure array substrate includes a plurality of metal oxide nanostructures vertically aligned on the substrate while being separated from each other. The metal oxide nanostructures include nanorods having a ZnO core/TiO2 shell structure or TiO2 nanotubes. The method includes the steps of forming ZnO nanorods vertically aligned from a seed layer formed on a substrate; and coating a TiO2 sol on the ZnO nanorods and sintering the ZnO nanorods to form nanorods having a ZnO core/TiO2 shell structure. The transparency and flexibility of the substrate are ensured. The photoelectric conversion efficiency of the solar cell is improved if the nanostructure array substrate is employed in the photo electrode of the dye-sensitized solar cell.

Abstract: Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.

Abstract: Provided are an electronic device, a method of manufacturing the same, and a touch panel including the device. The electronic device includes a nanostructure having a plurality of metal oxide nanorods vertically aligned at predetermined intervals in intersection regions between bottom electrodes and top electrodes that perpendicularly cross each other. The nanorods are formed to the same diameter and the same height so that the electronic device can exhibit uniform performance. Also, a method of manufacturing an electronic device includes selectively vertically growing the same number of metal oxide nanostructures with a uniform size only on the bottom electrodes using a nano-template with a plurality of vertical holes. Furthermore, a touch panel includes a nanostructure having a plurality of piezoelectric nanorods disposed in a plurality of touch cells arranged in a matrix.

Abstract: The light extraction efficiency of a typical light-emitting diode (LED) is improved by incorporating one-dimensional ZnO nanorods. The light extraction efficiency is improved about 31% due to the waveguide effect of ZnO sub-microrods, compared to an LED without the nanorods. Other shapes of ZnO microrods and nanorods are produced using a simple non-catalytic wet chemical growth method at a low temperature on an indium-tin-oxide (ITO) top contact layer with no seed layer. The crystal morphology of a needle-like or flat top hexagonal structure and the density and size of ZnO microrods and nanorods are easily modified by controlling the pH value and growth time. The waveguide phenomenon in each ZnO rod is observed using confocal scanning electroluminescence microscopy (CSEM) and micro-electroluminescence spectra (MES).

Abstract: Disclosed herein are a method for preparing zinc oxide (ZnO) nanoparticles and a method for preparing ZnO nanorods. The method for preparing ZnO nanoparticles may include: preparing a growth solution containing a zinc salt, a precipitator, and a growth inhibitor; and applying heat to the growth solution to prepare ZnO nanoparticles. Moreover, the method for preparing ZnO nanorods may include: forming a ZnO seed layer on a substrate; forming a pattern layer including a plurality of holes on the ZnO seed layer; preparing a growth solution containing a zinc salt, a precipitator, and a growth inhibitor; and immersing the substrate including the pattern layer in the growth solution such that ZnO nanorods are grown in the holes.

Abstract: A method of forming features on substrates by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on a substrate to form a liquid film thereon; and then either: (c) curing the liquid film by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film, the polymer film having a glass transition temperature (Tg); and imprinting the polymer film with a mold having a desired pattern to form a corresponding negative pattern in the polymer film, or (d) imprinting the liquid film with the mold and curing it to form the polymer film. The temperature of imprinting is as little as 10° C. above the Tg, or even less if the film is in the liquid state. The pressure of the imprinting can be within the range of 100 to 500 psi.

Abstract: An improved method of forming features on substrates by imprinting is provided. In the method, a polymer solution that contains at least one polymer dissolved in at least one polymerizable monomer and the polymer solution is deposited on the substrate to form a liquid film thereon. Further, the liquid film is cured by causing the at least one monomer to polymerize and optionally cross-linking the at least one polymer to thereby form a polymer film, the polymer film having a glass transition temperature of less than 100° C., and the polymer film is imprinted with a mold having a desired pattern to form a corresponding negative pattern in the polymer film. Alternatively, the liquid film is imprinted with the mold and the liquid film is cured in the presence of the mold to form the polymer film with the negative pattern.

Abstract: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

Abstract: A method for increasing adhesion between a substrate and a polymeric imprintable material during an imprinting procedure. The method includes chemically bonding a plurality of molecules to a surface of a substrate to form a self-assembled monolayer thereon. A monomer is copolymerized with the self-assembled monolayer to form a polymeric imprintable material that is chemically bonded to the self-assembled monolayer. Adhesion between the polymeric imprintable material and the substrate is substantially increased by the self-assembled monolayer.

Abstract: An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

Abstract: A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

Abstract: A method is provided for coating a surface having features thereon with a self-assembled monolayer for aiding release of the surface during an imprinting procedure. The method comprises exposing the surface to a vapor of a mold release agent.

Abstract: A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.

Abstract: A method of forming a hardened nano-imprinting stamp is disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride.

Abstract: A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

Abstract: A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

Abstract: A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

Abstract: A hardened nano-imprinting stamp and a method of forming a hardened nano-imprinting stamp are disclosed. The hardened nano-imprinting stamp includes a plurality of silicon-based nano-sized features that have an hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process atoms of carbon and/or nitrogen bombard and penetrate a plurality of exposed surfaces of the nano-sized features and chemically react with the silicon to form the hardened shell of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp are improved.