Abstract: A toy doll with a movable portion is a toy doll with a first portion and a second portion that is movably coupled to the first portion and movable between a first configuration and a second configuration. The first portion includes a trigger that may actuate at least one of an engagement assembly and a hinge assembly. The engagement assembly may retain the second portion in the first configuration until the trigger is actuated while the hinge assembly may move the second portion of the toy doll to the second configuration.

Abstract: In an RC calibration circuit, a single reference current is used to generate voltages across both a resistive and capacitive element. The component value of one of the resistive and capacitive element is successively altered until the voltages are substantially equal. Additionally, parasitic capacitances in the circuit are precharged to the resistive element voltage prior to the comparison. The RC calibration circuit eliminates the errors due to current matching and parasitic capacitances in prior art calibration circuits. The circuit includes a comparator and a digital control circuit (DCW) including a successive approximation register (SAR) holding the value of the digital control word used to control the component value of the tunable resistive or capacitive element. The SAR alters the DCW in an iterative, bit-by-bit binary searching pattern in response to the comparator output.

Abstract: In an RC calibration circuit, a single reference current is used to generate voltages across both a resistive and capacitive element. The component value of one of the resistive and capacitive element is successively altered until the voltages are substantially equal. Additionally, parasitic capacitances in the circuit are precharged to the resistive element voltage prior to the comparison. The RC calibration circuit eliminates the errors due to current matching and parasitic capacitances in prior art calibration circuits. The circuit includes a comparator and a digital control circuit (DCW) including a successive approximation register (SAR) holding the value of the digital control word used to control the component value of the tunable resistive or capacitive element. The SAR alters the DCW in an iterative, bit-by-bit binary searching pattern in response to the comparator output.

Abstract: The invention provides a battery device and a method for packaging, disassembling, and recycling the battery device, wherein the anode conductive element is disposed in a reaction trough frame with a bump thereof protruding from the frame; two sets of the cathode conductive elements cover on a first opening and a second opening of the reaction trough frame, respectively, so as to form a reaction region for accommodating electrolyte therein; and a metallic fastener is disposed on surfaces of the cathode conductive elements and the reaction trough frame and fastened with a buckling member. The invention provides a simple structure that can be packaged rapidly, disassembled and recycled to thereby overcome the drawbacks of conventional batteries.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: A simulated eye is provided. The tilt switch comprises an electrically insulating housing with a chamber formed therein. The chamber is defined by a bottom surface and a surrounding surface. The tilt switch also includes a plurality of contact terminals, each of which comprises an inner terminal portion and an outer terminal portion. Each inner terminal portion protrudes out of the surrounding surface of the chamber and extends in a direction substantially parallel to the bottom surface. The tilt switch further includes an electrically conductive moving member placed in a space defined by the cap, the bottom surface, and the plurality of contact terminals. The electrically conductive moving member is capable of simultaneously contacting with at most two of the plurality of contact terminals.

Abstract: A simulated eye is provided. The tilt switch comprises an electrically insulating housing with a chamber formed therein. The chamber is defined by a bottom surface and a surrounding surface. The tilt switch also includes a plurality of contact terminals, each of which comprises an inner terminal portion and an outer terminal portion. Each inner terminal portion protrudes out of the surrounding surface of the chamber and extends in a direction substantially parallel to the bottom surface. The tilt switch further includes an electrically conductive moving member placed in a space defined by the cap, the bottom surface, and the plurality of contact terminals. The electrically conductive moving member is capable of simultaneously contacting with at most two of the plurality of contact terminals.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: In the fabrication of a semiconductor device, an SiO2GeO2 film is formed on a substrate, then washed with water to dissolve the GeO2, leaving a porous SiO2 film. The SiO2GeO2 film may be deposited directly on the substrate, or an SiGe film may be deposited on the substrate and then oxidized to form the SiO2GeO2 film. The porous SiO2 film has an easily controllable dielectric constant and can be advantageously used as an interlayer dielectric film.

Abstract: The present invention provides a central processing unit for processing at least one encrypted software. The encrypted software comprises at least one encrypted software section. The encrypted software section is encrypted with a management key MK, and the MK being encrypted with a device key DK as a encrypted MK. The central processing unit comprises processing and cache unit, and cryptographic unit. The cryptographic unit comprises device key storage unit for storing the DK, a plurality of management key storage units for storing MKs, wherein each management key storage unit corresponding to a management key index MKI, and decryption unit. The decryption unit decrypts a encrypted MK with the DK to obtain a MK, stores the MK to a management key storage unit, and output a MKI corresponding to the management key storage unit, thus the MKI is used to correspond to the encrypted software section.

Abstract: The present invention provides a semiconductor device which do not form parasitic transistors in device isolation regions and is capable of narrowing device-to-device intervals, and a method of manufacturing the semiconductor device. The method includes a step for anisotropically etching spots that serve as active regions of a sapphire substrate and causing their ends to become substantially normal to the surface of the sapphire substrate, a step for forming a silicon layer so as to be thicker than an etching depth, a step for implanting silicon ions to amorphize the silicon layer, a step for performing annealing and thereby recrystallizing the amorphized silicon layer, and a step for planarizing the recrystallized silicon layer until the sapphire substrate is exposed, thereby to leave the silicon layer that serves as each of the active regions, whereby device-to-device isolation regions can be formed normal to the sapphire substrate.

Abstract: A flashlight having a number of unique and advantageous features is disclosed. The flashlight has two light sources, such as a xenon light bulb and a plurality of light-emitting diodes (LEDs). A switch and a switching circuit function to turn the two light sources on and off in one of four states: (1) both light sources are off, (2) only the first light source is on, (3) only the second light source is on, and (4) both light sources are on. The flashlight has an end portion having a substantially cylindrical shape with a plurality of parallel grooves, which are useful for stopping a rolling movement of the flashlight when it is laid on its side. The flashlight body has an indented portion for receiving the switch, the indented portion having a cylindrical shape that can be machined relatively easily.

Abstract: A semiconductor device has an STI oxide film (106), of which surface is positioned higher than the surface of the silicon substrate (100) to prevent a pointed portion and a thin film thickness of a gate oxide film (108). The gate oxide film (106) becomes thicker toward a side wall (112) of the STI oxide film (106) to prevent the leakage current and increase the gate breakdown voltage.

Abstract: An intelligent surrogate apparatus and method for enhancing the display output and interaction capability of a portable device. The apparatus comprises a communication interface for connecting the portable device and an display controller. In addition, the apparatus comprises a connection manager for establishing connection and managing data flows; a graphics data receiver for receiving structured graphics data output from an application running on the portable device via the communication interface and converting them to a corresponding graphic function invocation; and a windows manager which may invoke a graphic function library to organize application windows according to the graphic function invocation. The apparatus may comprise fully functional computer keyboard input and mouse input capability.

Abstract: The present invention provides a semiconductor device which do not form parasitic transistors in device isolation regions and is capable of narrowing device-to-device intervals, and a method of manufacturing the semiconductor device. The method includes a step for anisotropically etching spots that serve as active regions of a sapphire substrate and causing their ends to become substantially normal to the surface of the sapphire substrate, a step for forming a silicon layer so as to be thicker than an etching depth, a step for implanting silicon ions to amorphize the silicon layer, a step for performing annealing and thereby recrystallizing the amorphized silicon layer, and a step for planarizing the recrystallized silicon layer until the sapphire substrate is exposed, thereby to leave the silicon layer that serves as each of the active regions, whereby device-to-device isolation regions can be formed normal to the sapphire substrate.

Abstract: A semiconductor device has an STI oxide film (106), of which surface is positioned higher than the surface of the silicon substrate (100) to prevent a pointed portion and a thin film thickness of a gate oxide film (108). The gate oxide film (106) becomes thicker toward a side wall (112) of the STI oxide film (106) to prevent the leakage current and increase the gate breakdown voltage.

Abstract: In order to prevent silicides from getting under side walls when the silicides are formed over MOSFET formed over an SOI substrate, trenches are defined in the SOI substrate and side walls are formed over the trenches, whereby the silicides are blocked so as not to get under a gate insulator with a lower portion of each side wall as a structure convex in a downward direction of the substrate. Thus, an increase in gate withstand voltage, a decrease in gate leakage current and control on a short channel effect are achieved.

Abstract: A method of analyzing a composition depth profile of a solid surface layer, wherein actually-measured intensity of photoelectrons emitted from the solid surface layer by irradiating the solid surface layer containing at least two or more species of element with X rays and photoelectron calculated intensity obtained by making a calculation assuming an elemental composition ratio for each of a plurality of sub-layers into which the solid surface layer has been temporarily divided are utilized to determine a composition depth profile of the solid surface layer, the method including a step of at least repeating an approximate calculation including: distinguishing a specified sub-layer such that the calculated intensity best converges to the actually-measured intensity in the sub-layers; and correcting an elemental composition ratio at least for the specified sub-layer so that the calculated intensity converges to the actually-measured intensity, thereby determining the composition depth profile of the solid surfa

Abstract: A method of analyzing a composition depth profile of a solid surface layer, wherein actually-measured intensity of photoelectrons emitted from the solid surface layer by irradiating the solid surface layer containing at least two or more species of element with X rays and photoelectron calculated intensity obtained by making a calculation assuming an elemental composition ratio for each of a plurality of sub-layers into which the solid surface layer has been temporarily divided are utilized to determine a composition depth profile of the solid surface layer, the method including a step of at least repeating an approximate calculation including: distinguishing a specified sub-layer such that the calculated intensity best converges to the actually-measured intensity in the sub-layers; and correcting an elemental composition ratio at least for the specified sub-layer so that the calculated intensity converges to the actually-measured intensity, thereby determining the composition depth profile of the solid surfa