Abstract: In order to prevent suicides from getting under side walls when the suicides are formed over MOSFET formed over an SOT substrate, trenches are defined in the SOI substrate and side walls are formed over the trenches, whereby the suicides are blocked so as not to get under a gate insulator with a lower portion of each side wall as a structure convex in a downward direction of the substrate. Thus, an increase in gate withstand voltage, a decrease in gate leakage current and control on a short channel effect are achieved.

Abstract: The semiconductor wafer evaluation method of the present invention comprises the steps of: preparing a substrate embedded with an oxide film; removing the oxide film from a surface of the substrate so as to expose a silicon layer; removing silicon portions within the silicon film and the embedded oxide film by etching so as to form holes within the embedded oxide layer in a first etching step; removing the silicon substrate below the holes by etching in a second etching step; and measuring and evaluating the holes enlarged by the first and second etching steps.

Abstract: In order to achieve a method for analyzing the compositional distribution of deposited film adhering to the internal surface of a contact hole having a diameter in the deep submicron order, primary ions 18 are radiated into the surface 12a of an insulating film 12 where the contact hole 14 is formed to generate secondary ions 20. The primary ions are radiated into the surface of the insulating film from a constant diagonal direction. Then, mass spectrometry is performed on the resulting secondary ions to detect the compositional distribution of the deposited film 16 formed at the internal surface of the contact hole. Thus, the compositional distribution of the deposited film is ascertained over the depth-wise direction of the contact hole.