Abstract: An antenna or antenna array for a steerable light beam, the antenna array comprising a plurality of linear antenna arrays (100), each linear antenna array comprising: a plurality of antenna elements (104); a waveguide (102) supporting the antenna elements having a length and a thickness; and a control element (400, 402, 404), adjacent to the waveguide, arranged to induce a change in refractive index along at least a part of the length of the waveguide and in at least a part of the thickness of the waveguide, wherein the change in refractive index in the waveguide causes a phase shift in light emitted via each of the plurality of antenna elements.

Abstract: A distributed feedback laser integrated on silicon comprising a combination of a waveguide of a first material and a laser diode a second material, different from the first material, wherein the laser diode comprises a plurality of regularly spaced metalized grating elements which form a single longitudinal mode; wherein the waveguide comprises a plurality of waveguide elements separated by metalized regions; and wherein the metalized grating elements and the metalized regions are adapted to be coupled to one another to form the distributed feedback laser.

Abstract: In various embodiments, an optical alignment structure may be provided. The optical alignment structure may include a light carrying structure configured to receive an input optical light from an external light source. The optical alignment structure may further include a light redirection mechanism coupled to the light carrying structure. The light redirection mechanism may be configured to receive the input optical light from the light carrying structure. The light redirection mechanism may be further configured to redirect the input optical light back to the light carrying structure, the redirected input optical light configured to be detected by a detector for alignment of the optical alignment structure with the external optical source.

Abstract: According to embodiments of the present invention, a photodetector arrangement is provided. The photodetector arrangement includes a plurality of germanium-based photodetectors, each germanium-based photodetector configured to receive an optical signal and to generate an electrical signal in response to the received optical signal, and an electrode arrangement arranged to conduct the electrical signals.

Abstract: An optical sensing system may include a light separation element configured to separate an input light into a plurality of sliced lights and a first resonator configured to receive one sliced light of the plurality of sliced lights. An effective refractive index of the first resonator may be changeable in response to a change in a refractive index of a cladding of the first resonator, a second resonator coupled to the first resonator and a detector configured to measure an intensity of the sliced light, the intensity of the sliced light based on a difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator. The difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator may be based on the effective refractive index of the first resonator.

Abstract: According to embodiments of the present invention, a photodetector arrangement is provided. The photodetector arrangement includes a plurality of germanium-based photodetectors, each germanium-based photodetector configured to receive an optical signal and to generate an electrical signal in response to the received optical signal, and an electrode arrangement arranged to conduct the electrical signals.

Abstract: In various embodiments, an optical alignment structure may be provided. The optical alignment structure may include a light carrying structure configured to receive an input optical light from an external light source. The optical alignment structure may further include a light redirection mechanism coupled to the light carrying structure. The light redirection mechanism may be configured to receive the input optical light from the light carrying structure. The light redirection mechanism may be further configured to redirect the input optical light back to the light carrying structure, the redirected input optical light configured to be detected by a detector for alignment of the optical alignment structure with the external optical source.

Abstract: An optical sensing system may include a light separation element configured to separate an input light into a plurality of sliced lights and a first resonator configured to receive one sliced light of the plurality of sliced lights. An effective refractive index of the first resonator may be changeable in response to a change in a refractive index of a cladding of the first resonator, a second resonator coupled to the first resonator and a detector configured to measure an intensity of the sliced light, the intensity of the sliced light based on a difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator. The difference between a resonant wavelength of the first resonator and a resonant wavelength of the second resonator may be based on the effective refractive index of the first resonator.

Abstract: An optical modulator and a method for manufacturing an optical modulator are provided.

Abstract: According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a depletion region comprising a junction between from a first conductivity type portion and a second conductivity type portion, a first intrinsic region, and a second intrinsic region, and wherein the depletion region is disposed between the first intrinsic region and the second intrinsic region.

Abstract: According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided.

Abstract: According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a second conductivity type adjacent to the front side, and a contact region of the second conductivity type adjacent to the front side, the contact region being spaced apart from the active region by a separation region.

Abstract: According to embodiments of the present invention, an optical sensing system is provided. The optical sensing system includes a resonator arrangement including a first resonator, wherein an effective refractive index of the first resonator is changeable in response to a change in a refractive index of a cladding of the first resonator, and a second resonator to which a current or voltage being adjustable in response to a change in the effective refractive index of the first resonator is applied, wherein the optical sensing system is configured to determine the change in the effective refractive index of the first resonator based on a change in the current or voltage applied to the second resonator. Further embodiments provide a method of determining a change in an effective refractive index of a resonator of an optical sensing system.

Abstract: An optical converter and a method of manufacturing the optical converter are provided. The optical converter may include a signal receiving portion configured to receive an optical signal from an optical fiber which can be coupled to the optical converter, a signal output portion configured to output the optical signal received by the signal receiving portion, and a signal coupling portion being disposed between the signal receiving portion and the signal output portion and being configured to couple the optical signal received by the signal receiving portion into the signal output portion. The signal output portion may include a waveguide element having at least one tapered end section, and being partially or wholly surrounded by the signal coupling portion. The at least one tapered end section may be configured to couple the optical signal from the signal coupling portion into the waveguide element and the waveguide element may be configured to output the optical signal.

Abstract: According to embodiments of the present invention, a non-volatile memory device is provided. The non-volatile memory device includes a nanowire transistor including a nanowire channel, and a resistive memory cell arranged adjacent to the nanowire transistor and in alignment with a longitudinal axis of the nanowire channel. According to further embodiments of the present invention, a method of forming a non-volatile memory device is also provided.

Abstract: An embodiment of the invention relates to an optical resonator. The optical resonator includes an input optical waveguide and a closed loop coupled to the input optical waveguide. The closed loop is adapted to receive light from the input optical waveguide, wherein the closed loop includes at least one hole formed within a portion of the closed loop.

Abstract: An optical modulator and a method for manufacturing an optical modulator are provided.

Abstract: An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region. The electro-optic active region includes a first partial active region and a second partial active region and an insulating structure in between. The insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first partial active region and the second partial active region in the direction perpendicular to the surface of the insulating layer. A method for manufacturing is also disclosed.

Abstract: An optical converter and a method of manufacturing the optical converter are provided. The optical converter may include a signal receiving portion configured to receive an optical signal from an optical fiber which can be coupled to the optical converter, a signal output portion configured to output the optical signal received by the signal receiving portion, and a signal coupling portion being disposed between the signal receiving portion and the signal output portion and being configured to couple the optical signal received by the signal receiving portion into the signal output portion. The signal output portion may include a waveguide element having at least one tapered end section, and being partially or wholly surrounded by the signal coupling portion. The at least one tapered end section may be configured to couple the optical signal from the signal coupling portion into the waveguide element and the waveguide element may be configured to output the optical signal.

Abstract: The wafer arrangement (100) provided comprises a first wafer (101), which comprises an integrated circuit and a recess (105). The wafer arrangement further comprises a portion of a second wafer (103), which comprises a carrier portion and a protrusion (107), the protrusion comprising an active component or actively controlled component (109) such as a MEMS component, wherein the portion of the second wafer (103) is coupled to the first wafer (101) such that the protrusion (107) is received in the recess (105). The invention provides a mechanism for accurately aligning an active component (109) on the second wafer (103) with components on the first wafer (101), such as photonic, electronic or optical components.