Abstract: A preparation method for a solar cell includes: providing a silicon wafer substrate having a first surface and a second surface, which is opposite to the first surface; forming a silicon-containing thin film comprising a doped layer on the first surface of the silicon wafer substrate, wherein the forming method for the doped layer comprises: forming a partially doped layer in an atmosphere in which the flow rate of a dopant gas source is 100-1000 sccm and the flow rate of silane is 1000-4000 sccm, and forming a remaining doped layer in an atmosphere in which the flow rate of the dopant gas source is 1500-3000 sccm and the flow rate of the silane remains unchanged; forming a patterned region; and performing a texturing treatment.

Abstract: Disclosed are a conductive member for connecting photovoltaic cells and a manufacturing method for the conductive member, and a photovoltaic module and a manufacturing method therefor. The conductive member comprises a first segment and a second segment in a length direction thereof, wherein the first segment and the second segment both have a planar contact surface; the second segment has a reflective surface facing away from a planar contact surface thereof; the first segment has a first cross section perpendicular to a length direction thereof; the second segment has a second cross section perpendicular to a length direction thereof; and the area of the first cross section is equal to the area of the second cross section.

Abstract: A preparation method for a solar cell includes: providing a silicon wafer having a first surface and a second surface opposite to the first surface; forming an ultrathin silicon oxide layer on the first surface of the silicon wafer, and sequentially forming a phosphorus-doped amorphous silicon layer and a silicon oxide mask layer on the ultrathin silicon oxide layer; and annealing the silicon wafer to densify the silicon oxide mask layer and convert the phosphorus-doped amorphous silicon layer into a phosphorus-doped polycrystalline silicon layer.

Abstract: In one aspect, a preparation method for a double-sided solar cell includes: preparing a semi-finished product of the double-sided solar cell, the semi-finished product including a silicon wafer, and a P-type doped layer, a front passivation layer, and a front anti-reflection layer that are sequentially formed on a front surface of the silicon wafer; providing an opening corresponding to a front finger on a front surface of the semi-finished product, the opening extending through the front anti-reflection layer and the front passivation layer in sequence and exposing a surface of the P-type doped layer; and coating a non-fire-through paste in contact with the P-type doped layer through the opening, sintering the paste, to form the front finger. This preparation method can increase the open circuit voltage of the double-sided solar cell, and improve the conversion efficiency of double-sided solar cell.

Abstract: An N-type double-sided solar cell preparation method comprises: sequentially forming a front aluminum oxide passivation layer and a front silicon nitride anti-reflection layer on a front face of an N-type silicon wafer. The front aluminum oxide passivation layer is prepared by using a plasma-enhanced atomic layer deposition method, and the deposition conditions thereof involve: any frequency in the frequency range of 40 kHz to 400 kHz is selected to be a radio-frequency power supply frequency, a gaseous aluminum source is first introduced into a plasma apparatus in a vacuum state, such that a layer of aluminum source molecules is adsorbed on the surface of the silicon wafer, and a gaseous oxygen source is then introduced, such that the oxygen source is ionized into plasma and reacts with the aluminum source to obtain aluminum oxide.

Abstract: In one aspect, a preparation method for a bifacial solar cell utilizes a method of deposition and then bombardment to form an intrinsic silicon layer, thus enhancing an ablation resistance of a solar cell, reducing a metal composite loss and a filing coefficient, and significantly improving an efficiency of an obtained solar cell. Moreover, in the bifacial solar cell of the present disclosure, compared with a second crystalline silicon doped layer, the intrinsic silicon layer has a higher number of —SiH connected to mono-hydrogen atoms, a lower number of SiH2 connected to dihydrogen atoms, and fewer carrier recombination defects in the intrinsic silicon layer, thus improving field passivation performance.

Abstract: In one aspect, a method for preparing a solar cell includes: forming a selective emitter on a front side of the solar cell, the selective emitter including first and second doped regions, and a P-type doping concentration of the first doped region being greater than that of the second doped region; and bringing a positive electrode of the solar cell to be in electrical contact with the first doped region. The disclosed method can effectively improve a filling factor of the solar cell while ensuring a lower Auger recombination and improving an open circuit voltage and a short-circuit current such that the solar cell has higher conversion efficiency.

Abstract: A method for manufacturing a TOPCon cell includes following steps: texturing a front side of an silicon wafer and then preparing a PN junction; forming a tunnel oxide layer, an intrinsic polysilicon layer, a doped polysilicon layer, and a silicon oxide mask layer in sequence on a back side of the silicon wafer, wherein the tunnel oxide layer is deposited by PEALD at a deposition temperature of 150° C. to 200° C., the doped polysilicon layer is deposited by PECVD, and the silicon oxide mask layer has a thickness of 10 nm to 40 nm; removing a wraparound silicon oxide mask layer material and a wraparound polysilicon layer material from the front side of the silicon wafer, and then removing the silicon oxide mask layer from the back side; and forming a front electrode on the PN junction and a back electrode on the doped polysilicon layer, respectively.

Abstract: In the preparation process for a passivated contact battery, preparation of a back surface field passivation structure thereof comprises: growing a tunneling oxide layer on a back surface of a silicon wafer; growing an intrinsic silicon carbide layer on a surface of the tunneling oxide layer; growing a phosphorus-doped silicon carbide layer on a surface of the intrinsic silicon carbide layer; and performing annealing, so as to cause the silicon carbide and the phosphorus in the phosphorus-doped silicon carbide layer to form covalent bonds. The passivated contact battery can be obtained by means of the described preparation process, and same comprises a silicon wafer as well as a tunneling oxide layer, an intrinsic silicon carbide layer, and a phosphorus-doped silicon carbide layer which are sequentially stacked on a back surface of the silicon wafer.

Abstract: In one aspect, a preparation method for a solar cell includes: forming a target amorphous silicon layer on a side of a silicon wafer using a preset process, and then performing an annealing treatment on the target amorphous silicon layer to convert the target amorphous silicon layer into a target polycrystalline silicon layer, wherein the preset process includes at least one cycle period, the at least one cycle period comprises: depositing a target amorphous silicon preformed layer with a preset thickness and performing a hydrogen gas plasma treatment on the target amorphous silicon preformed layer, wherein the preset thickness of the target amorphous silicon preformed layer is less than or equal to a thickness of the target amorphous silicon layer. This method can effectively improve a crystallization rate of converting amorphous silicon into polycrystalline silicon, improving field passivation performance and contact performance of the solar cell.

Abstract: A silicon oxide layer is formed on the back surface of an N-type silicon wafer; an N-type silicon layer is formed on the silicon oxide layer, wherein the phosphine concentration of the N-type silicon layer is within a first preset concentration range; and an antireflection layer is formed on the N-type silicon layer and a back electrode is formed on the antireflection layer. In the high-temperature annealing process, hydrogen atoms can be bound by phosphine, such that membrane explosion caused by the escape of hydrogen atoms is avoided, an open-circuit voltage, the conversion efficiency and a filling factor can be improved, a back passivation effect can be enhanced, and the quality of a cell piece can be improved.

Abstract: In a solar cell, the back surface of a substrate thereof is provided with alternately distributed emitter zones and back surface field zones. An emitter is formed in each emitter zone, and the emitters are made of boron-doped monocrystalline silicon. A back surface field is formed in each back surface field zone; the back surface fields comprise tunneling oxide layers and polycrystalline silicon layers in stacked distribution, the polycrystalline silicon layers being made of phosphorus-doped polycrystalline silicon, and the tunneling oxide layers being located between a polycrystalline silicon layer and a polycrystalline silicon layer. Positive electrodes are electrically connected to the emitters, and negative electrodes are electrically connected to the back surface fields.

Abstract: The present application relates to the technical field of solar cells, and in particular, to a method for preparing a tunnel oxide layer and an amorphous silicon thin film and a TOPCon cell. The method includes sequentially depositing a tunnel oxide layer, an intrinsic amorphous silicon thin film and a doped amorphous silicon thin film at a deposition temperature of 440° C. to 460° C. by using a PECVD device. A flow rate of silane of depositing the intrinsic amorphous silicon thin film and the doped amorphous silicon thin film is in a range of 2000 sccm to 2500 sccm.

Abstract: A tunnel oxide layer, an N-type bifacial crystalline silicon solar cell and a method for manufacturing the same are provided. The method for manufacturing the tunnel oxide layer includes forming excess -OH on a back side of a silicon wafer, and depositing the tunnel oxide layer on the back side of the silicon wafer by a Plasma Enhanced Atomic Layer Deposition method. The method for manufacturing the N-type bifacial crystalline silicon solar cell can include following steps: performing cleaning, texturing, boron diffusing, and alkaline polishing on an N-type silicon wafer, sequentially forming a P-type doped layer, a passivation layer, and an anti-reflection layer on a front side of the alkaline-polished N-type silicon wafer, and forming a tunnel oxide layer on a back side of the alkaline-polished N-type silicon wafer, followed by forming an N-type doped polysilicon layer, and after annealing, forming an anti-reflection layer.

Abstract: A crystalline silicon solar cell and a metallization method therefor, which belong to the field of solar cells. The crystalline silicon solar cell comprises a photovoltaic structure, and passivation mechanisms, which are respectively formed on the front face and back face of the photovoltaic structure, wherein the front face is also provided with a front-face electrode, which is electroplated by using a conductive layer that is formed by means of chemical plating, the back face is also provided with a back-face electrode, which is electroplated by using another conductive layer that is formed by means of chemical plating, and a heavily doped area is formed in a region of the back face that corresponds to the back-face electrode. The cell has low manufacturing costs, high conversion efficiency and high reliability.

Abstract: Clinically validated methods of administering Yunnan Baiyao or Xingnaojing can improve postoperative recovery and long-term clinical prognosis of patients with moderate-to-severe traumatic brain injury (TBI) and emergency craniotomy. Both medicinal methods are useful for minimizing or inhibiting the adverse impacts of secondary injury, oxidative damage and neuroinflammation associated with TBI, spinal cord injury, craniotomy/craniectomy, cerebral hemostasis and hemorrhage, coagulopathy, stroke, neural injury and neuroinflammation, and for promoting the long-term functional recovery and well-being of the patients with the afore-mentioned diseases.

Abstract: Disclosed are a conductive member for connecting photovoltaic cells and a manufacturing method for the conductive member, and a photovoltaic module and a manufacturing method therefor. The conductive member comprises a first segment and a second segment in a length direction thereof, wherein the first segment and the second segment both have a planar contact surface; the second segment has a reflective surface facing away from a planar contact surface thereof; the first segment has a first cross section perpendicular to a length direction thereof; the second segment has a second cross section perpendicular to a length direction thereof; and the area of the first cross section is equal to the area of the second cross section.

Abstract: The present disclosure relates to a method for preparing nano-textured surface on single side of a silicon wafer, including the following steps: (1) superimposing two silicon wafers to obtain a first silicon wafer superimposition structure; the side on which the silicon wafers is superimposed is recorded as an attached surface, and the side exposed outside is recorded as an exposed surface; and (2) performing nano-textured surface etching on the first silicon wafer superimposition structure; and providing each silicon wafer with nano-textured surface on the exposed surface and a nano-textured surface etched strip on the edge of the attached surface. In the present disclosure, while the nano-textured surface etching is performed, the edge of the attached surface is etched with nano-textured surface by selecting a specific etching rate, which reduces the pulling force for detaching the wafers and reduces the fragmentation rate during the detaching process.