Abstract: A display panel and a display device are provided to better protect a metal connecting line area in a peripheral wiring region, improve the protection degree and prevent the wire breakage. The display panel includes a gate insulating layer (102) disposed on a gate metal layer (101); and a protective layer (103), a passivation layer (105) and an indium tin oxide (ITO) coating layer (107) disposed on the gate insulating layer in sequence. The display panel and the display device can increase the film thickness in the peripheral wiring region, and hence can protect the entire peripheral wiring region and particularly the metal connecting line area exposed outside a color filter panel and improve the protection degree.

Abstract: Provided is an air interface security method. In the process of protocol transmission, the method executes: 1) a short-range coupling device sending a security parameter request message to a short-range card; 2) after receiving the security parameter request message, the short-range card conduct security parameter feedback on the short-range coupling device; and 3) the short-range coupling device and the short-range card establish a security link according to a security parameter. Provided are a short-range coupling device, a short-range card, etc. for achieving the method. By introducing a security mechanism, the present invention provides a security protection capability for an air interface, can provide identity authentication for a short-range coupling device and a short-range card to ensure the validity and authenticity of the identities of both sides in the communications, and at the same time, will not bring additional hardware overhead to the short-range coupling device and the short-range card.

Abstract: The present invention discloses a method for introducing an exogenous DNA by overcoming the restriction modification barrier of the target bacterium. The method provided in the present invention comprises the steps of 1) co-expressing all DNA-methyltransferase-encoding genes in the genome of the target bacterium in E. coli in which the restriction modification system thereof has been deleted to obtain a recombinant bacterium A; 2) introducing an exogenous DNA molecule into the recombinant bacterium A for in vivo modification so as to obtain a methylation-modified exogenous DNA molecule; 3) introducing the methylation-modified exogenous DNA molecule into the target bacterium. The experiments of the invention have demonstrated that the invention has a high transformation efficiency compared to prior methods for enabling genetic manipulation by overcoming the restriction modification barrier of the bacterium.

Abstract: A method is provided for preparing multilayer semiconductor structures, such as silicon-on-insulator wafers, having reduced warp and bow. Reduced warp multilayer semiconductor structures are prepared by forming a dielectric structure on the exterior surfaces of a bonded pair of a semiconductor device substrate and a semiconductor handle substrate having an intervening dielectric layer therein. Forming a dielectric layer on the exterior surfaces of the bonded pair offsets stresses that may occur within the bulk of the semiconductor handle substrate due to thermal mismatch between the semiconductor material and the intervening dielectric layer as the structure cools from process temperatures to room temperatures.

Abstract: In a method for reconstructing a source signal, which is encoded by a set of at least two descriptions, the method comprises: receiving a subset of the set of descriptions; reconstructing a reconstructed signal at an operating bitrate of a set of operating bitrates upon the basis of the subset of descriptions, the reconstructed signal having a second probability density, wherein the second probability density comprises a first statistical moment and a second statistical moment; and manipulating the reconstructed signal, wherein the reconstructed signal is manipulated such that, irrespective of the operating bitrate, a predetermined minimum similarity between the first statistical moment of the third probability density and the first statistical moment of the first probability density and between the second statistical moment of the third probability density and the second statistical moment of the first probability density is maintained.

Abstract: A method is provided for preparing multilayer semiconductor structures, such as silicon-on-insulator wafers, having reduced warp and bow. Reduced warp multilayer semiconductor structures are prepared by forming a dielectric structure on the exterior surfaces of a bonded pair of a semiconductor device substrate and a semiconductor handle substrate having an intervening dielectric layer therein. Forming a dielectric layer on the exterior surfaces of the bonded pair offsets stresses that may occur within the bulk of the semiconductor handle substrate due to thermal mismatch between the semiconductor material and the intervening dielectric layer as the structure cools from process temperatures to room temperatures.

Abstract: A method and a system for authenticating an entity based on a symmetric encryption algorithm are provided. The method includes the following steps: 1) an entity A sends an authentication request message to an entity B; 2) after receiving the authentication request message, the entity B sends an authentication response message to the entity A; 3) the entity A determines the validity of the entity B according to the received authentication response message. The implementation cost of the system can be reduced by using the authentication according to the invention.

Abstract: Provided are a platform authentication strategy management method for trusted connection architecture (TCA), and the trusted network connection (TNC) client, TNC access point and evaluation strategy service provider for implementing the method in the TCA. In the embodiments of the present invention, the platform authentication strategy for the access requester can be configured in the TNC access point or the evaluation strategy service provider, and the platform authentication strategy for the access requester configured in the evaluation strategy service provider can be delivered to the TNC access point. Moreover, a component-type-level convergence platform evaluation strategy can be executed in the TNC access point or the evaluation strategy service provider, to ensure that the realization of the TCA platform authentication has good application extensibility.

Abstract: A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position.

Abstract: The present invention discloses an assembled pet toilet using a disposable sanitary urine-absorbing pad, comprising: a frame; and a hook bonding material disposed on a lower surface of the frame and configured to bond to the disposable sanitary urine-absorbing pad. The frame can be formed by assembling four corner sockets and four insert rods. The sanitary urine-absorbing pad can be quickly and conveniently fixed or removed. Besides, the assembled pet toilet is convenient for packaging, transporting or carrying.

Abstract: A new light modulating material using interconnected unidirectionally oriented microdomains of a liquid crystal, dispersed in a stressed polymer structure, is provided. The light modulating material is prepared by dissolving the liquid crystal in an uncured monomer and then curing the monomer so that the polymer forms a well-developed interpenetrating structure of polymer chains or sheets that is uniformly dispersed through the film. When the film is subjected to stress deformation the liquid crystal undergoes a change in its unidirectional orientation. The concentration of the polymer is high enough to hold the shear stress, but is as low as possible to provide the highest switch of the phase retardation when an electric field is applied. The new materials are optically transparent and provide phase modulation of the incident light opposed to the low driving voltage, linear electro-optical response, and absence of hysteresis.

Abstract: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

Abstract: A new light modulating material using interconnected unidirectionally oriented microdomains of a liquid crystal, dispersed in a stressed polymer structure, is provided. The light modulating material is prepared by dissolving the liquid crystal in an uncured monomer and then curing the monomer so that the polymer forms a well-developed interpenetrating structure of polymer chains or sheets that is uniformly dispersed through the film. When the film is subjected to stress deformation the liquid crystal undergoes a change in its unidirectional orientation. The concentration of the polymer is high enough to hold the shear stress, but is as low as possible to provide the highest switch of the phase retardation when an electric field is applied. The new materials are optically transparent and provide phase modulation of the incident light opposed to the low driving voltage, linear electro-optical response, and absence of hysteresis.

Abstract: A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position.

Abstract: A new light modulating material using interconnected unidirectionally oriented microdomains of a liquid crystal, dispersed in a stressed polymer structure, is provided. The light modulating material is prepared by dissolving the liquid crystal in an uncured monomer and then curing the monomer so that the polymer forms a well-developed interpenetrating structure of polymer chains or sheets that is uniformly dispersed through the film. When the film is subjected to stress deformation the liquid crystal undergoes a change in its unidirectional orientation. The concentration of the polymer is high enough to hold the shear stress, but is as low as possible to provide the highest switch of the phase retardation when an electric field is applied. The new materials are optically transparent and provide phase modulation of the incident light opposed to the low driving voltage, linear electro-optical response, and absence of hysteresis.

Abstract: A new light modulating material using interconnected unidirectionally oriented microdomains of a liquid crystal, dispersed in a stressed polymer structure, is provided. The light modulating material is prepared by dissolving the liquid crystal in an uncured monomer and then curing the monomer so that the polymer forms a well-developed interpenetrating structure of polymer chains or sheets that is uniformly dispersed through the film. When the film is subjected to stress deformation the liquid crystal undergoes a change in its unidirectional orientation. The concentration of the polymer is high enough to hold the shear stress, but is as low as possible to provide the highest switch of the phase retardation when an electric field is applied. The new materials are optically transparent and provide phase modulation of the incident light opposed to the low driving voltage, linear electro-optical response, and absence of hysteresis.

Abstract: A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.