Abstract: Disclosed herein are systems, methods, and apparatus for forming adjustable windows may include a substrate and a first conducting oxide layer formed over the substrate. The adjustable windows may further include a spectral tuning layer formed over the first conducting oxide layer and an ion conductor layer formed over the spectral tuning layer. The adjustable windows may also include an ion storage layer formed over the ion conductor layer and a second conducting oxide layer formed over the ion storage layer. In some embodiments, the spectral tuning layer may be configured to change an infrared transmissivity of the adjustable window. Furthermore, the spectral tuning layer may be configured to toggle a solar heat gain ratio coefficient of the adjustable window between two or more solar heat gain ratio coefficients.

Abstract: Disclosed herein are systems, methods, and apparatus for forming windows that may include a substrate, a bottom dielectric layer formed over the substrate, and a reflective layer formed over the bottom dielectric layer. The windows may also include a conducting barrier layer formed over the reflective layer, an electrochromic layer formed over the conducting barrier layer, and an ion conductor layer formed over the electrochromic layer. The windows may further include an ion storage layer formed over the ion conductor layer and a conducting oxide layer formed over the ion storage layer. The electrochromic layer may be configured to change a transmissivity of the windows in response to a voltage being applied to the window. The windows may have an emissivity of between about 0.01 and 0.08.

Abstract: Embodiments provided herein describe abrasion resistant glass coatings and methods for forming abrasion resistant glass coatings. A glass body is provided. An abrasion resistant layer is formed above the glass body. The abrasion resistant layer includes an amorphous carbon. A pull-up layer is formed above the abrasion resistant layer. A protective layer is formed above the pull-up layer. The protective layer may include a titanium-based nitride. The pull-up lay may include tungsten oxide, zirconium oxide, manganese oxide, molybdenum oxide, titanium oxide, or a combination thereof.

Abstract: Embodiments provided herein describe transparent conductive films and methods for forming transparent conductive films. A transparent substrate is provided. A first layer is formed above the transparent substrate. The first layer includes nickel. A second layer is formed above the first layer. The second layer includes silver and palladium. A third layer is formed above the second layer. The third layer comprises nickel.

Abstract: A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).

Abstract: Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.

Abstract: Methods are provided to use data obtained from a single wavelength ellipsometer to determine the refractive index of materials as a function of wavelength for thin conductive films. The methods may be used to calculate the refractive index spectrum as a function of wavelength for thin films of metals, and conductive materials such as conductive metal nitrides or conductive metal oxides.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first substrate. The first substrate may have a first side and a second side. The low emissivity panels may also include a magnetic fluid layer deposited over the first side of the first substrate and a reflective layer deposited over the second side of the first substrate. The magnetic fluid layer may include magnetic particles. The reflective layer may include a conductive material configured to conduct an electrical current and generate a magnetic field. The magnetic field may be configured to change an orientation of the magnetic particles in the magnetic fluid layer and a transmissivity of the magnetic fluid layer within a visible spectrum. The low emissivity panels may also include a first bus and a second bus deposited along opposite edges of the reflective layer and electrically connected to the reflective layer.

Abstract: Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.

Abstract: Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.

Abstract: Methods to improve the reflection of light emitting devices are disclosed. A method consistent with the present disclosure includes forming a light generating layer over a site-isolated region of a substrate. Next, forming a first transparent conductive layer over the light generating layer. Forming a low refractive index material over the first transparent conductive layer, and in time, forming a second transparent conductive layer over the low refractive index material. Subsequently, forming a reflective material layer thereon. Accordingly, methods consistent with the present disclosure may form a plurality of light emitting devices in various site-isolated regions on a substrate.

Abstract: A method for forming boron oxide films formed using reactive sputtering. The boron oxide films are candidates as an anti-reflection coating. Boron oxide films with a refractive index of about 1.38 can be formed. The boron oxide films can be formed using power densities between 2 W/cm2 and 11 W/cm2 applied to the target. The oxygen in the reactive sputtering atmosphere can be between 40 volume % and 90 volume %.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.

Abstract: Disclosed herein are systems, methods, and apparatus for forming a low emissivity panel. In various embodiments, a partially fabricated panel may be provided. The partially fabricated panel may include a substrate, a reflective layer formed over the substrate, and a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the substrate and the top dielectric layer. The top dielectric layer may include tin having an oxidation state of +4. An interface layer may be formed over the top dielectric layer. A top diffusion layer may be formed over the interface layer. The top diffusion layer may be formed in a nitrogen plasma environment. The interface layer may substantially prevent nitrogen from the nitrogen plasma environment from reaching the top dielectric layer and changing the oxidation state of tin included in the top dielectric layer.

Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

Abstract: Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers.

Abstract: Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer.

Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.

Abstract: Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A barrier layer is formed above the reflective layer. A nitride-containing layer is formed above the barrier layer. The nitride-containing layer has a thickness that is 1 nm or less. A over-coating layer is formed above the nitride-containing layer. The over-coating layer includes a different material than that of the nitride-containing layer.