Patents by Inventor Guowen Ding

Guowen Ding has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for controlling corrosion of a substrate
    Publication number: 20060137710
    Abstract: A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).
    Type: Application
    Filed: February 27, 2006
    Publication date: June 29, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Eu Lim, Chungdee Pong, Changhun Lee, Mark Kawaguchi, Guowen Ding
  • Method for removal of residue from a substrate
    Publication number: 20040237997
    Abstract: A method for removing residues from a substrate. The residue is removed by exposing the substrate to a hydrogen-based plasma. After the substrate is exposed to the hydrogen-based plasma, the substrate may optionally be immersed in an aqueous solution including hydrogen fluoride.
    Type: Application
    Filed: May 27, 2003
    Publication date: December 2, 2004
    Applicant: Applied Materials, Inc. ;
    Inventors: Ying Rui, Chun Yan, Guowen Ding, Suzanne Arias
  • Method for removal of metallic residue after plasma etching of a metal layer
    Publication number: 20030219912
    Abstract: A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.
    Type: Application
    Filed: November 1, 2002
    Publication date: November 27, 2003
    Inventors: Xiaoyi Chen, Chentsau Ying, Padmapani C. Nallan, Ajay Kumar, Ralph C. Kerns, Ying Rui, Chun Yan, Guowen Ding, Wai-Fan Yau