Abstract: A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material, growing a first conformal epitaxial layer directly on the fin and substrate, wherein the first conformal epitaxial layer is highly doped, growing a second conformal epitaxial layer directly on the first conformal epitaxial layer, wherein the second conformal epitaxial layer is highly doped, selectively removing a portion of second epitaxial layer to expose a portion of the first conformal epitaxial layer, selectively removing a portion of the first conformal epitaxial layer to expose a portion of the fin and thereby form a trench, and forming a gate within the trench.

Abstract: A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material, growing a first conformal epitaxial layer directly on the fin and substrate, wherein the first conformal epitaxial layer is highly doped, growing a second conformal epitaxial layer directly on the first conformal epitaxial layer, wherein the second conformal epitaxial layer is highly doped, selectively removing a portion of second epitaxial layer to expose a portion of the first conformal epitaxial layer, selectively removing a portion of the first conformal epitaxial layer to expose a portion of the fin and thereby form a trench, and forming a gate within the trench.

Abstract: A trashcan assembly can include a body portion, a lid portion pivotably coupled with the body portion, and a sensor assembly configured to generate a signal when an object is detected within a sensing region. The sensor assembly can include a plurality of transmitters having a first subset of transmitters and a second subset of transmitters. A transmission axis of at least one transmitter in the first subset of transmitters can be different from a transmission axis of at least one of the transmitters in the second subset of transmitters. An electronic processor can generate an electronic signal to a power-operated drive mechanism for moving the lid portion from a closed position to an open position, such as in response to the sensor assembly detecting the object.

Abstract: The present invention may include measuring tool induced shift (TIS) on at least one wafer of a lot of wafers via an omniscient sampling process, randomly generating a plurality of sub-sampling schemes, each of the set of randomly generated sub-sampling schemes having the same number of sampled fields, measuring TIS at each location of each of the randomly generated sub-sampling schemes, approximating a set of TIS values for each of the randomly generated sub-sampling schemes utilizing the TIS measurements from each of the randomly generated sub-sampling schemes, wherein each set of TIS values for each of the randomly generated sub-sampling schemes is calculated utilizing an interpolation process configured to approximate a TIS value for each location not included in a randomly generated sub-sampling scheme, and determining a selected sub-sampling scheme by comparing each of the calculated sets of TIS values to the measured TIS of the omniscient sampling process.

Abstract: A trashcan assembly can include a body portion, a lid portion pivotably coupled with the body portion, and a sensor assembly configured to generate a signal when an object is detected within a sensing region. The sensor assembly can include a plurality of transmitters having a first subset of transmitters and a second subset of transmitters. A transmission axis of at least one transmitter in the first subset of transmitters can be different from a transmission axis of at least one of the transmitters in the second subset of transmitters. An electronic processor can generate an electronic signal to a power-operated drive mechanism for moving the lid portion from a closed position to an open position, such as in response to the sensor assembly detecting the object.

Abstract: A trashcan assembly can include a body portion, a lid portion pivotably coupled with the body portion, and a sensor assembly configured to generate a signal when an object is detected within a sensing region. The sensor assembly can include a plurality of transmitters having a first subset of transmitters and a second subset of transmitters. A transmission axis of at least one transmitter in the first subset of transmitters can be different from a transmission axis of at least one of the transmitters in the second subset of transmitters. An electronic processor can generate an electronic signal to a power-operated drive mechanism for moving the lid portion from a closed position to an open position, such as in response to the sensor assembly detecting the object.

Abstract: Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.

Abstract: Embodiments include a method for fabricating a semiconductor device and the resulting structure comprising forming a semi-insulating bottom barrier on a semiconductor substrate. A channel is formed on the bottom barrier. A semi-insulating layer is epitaxially formed on the bottom barrier, laterally adjacent to the channel. The semi-insulating layer is formed in such a way that stress is induced onto the channel. A CMOS transistor is formed on the channel.

Abstract: The present invention provides ART techniques with reduced LER. In one aspect, a method of ART with reduced LER is provided which includes the steps of: providing a silicon layer separated from a substrate by a dielectric layer; patterning one or more ART lines in the silicon layer selective to the dielectric layer; contacting the silicon layer with an inert gas at a temperature, pressure and for a duration sufficient to cause re-distribution of silicon along sidewalls of the ART lines patterned in the silicon layer; using the resulting smoothened, patterned silicon layer to pattern ART trenches in the dielectric layer; and epitaxially growing a semiconductor material up from the substrate at the bottom of each of the ART trenches, to form fins in the ART trenches.

Abstract: A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material, growing a first conformal epitaxial layer directly on the fin and substrate, wherein the first conformal epitaxial layer is highly doped, growing a second conformal epitaxial layer directly on the first conformal epitaxial layer, wherein the second conformal epitaxial layer is highly doped, selectively removing a portion of second epitaxial layer to expose a portion of the first conformal epitaxial layer, selectively removing a portion of the first conformal epitaxial layer to expose a portion of the fin and thereby form a trench, and forming a gate within the trench.

Abstract: This disclosure provides methods and systems for mitigating pathogen transmission via a touch surface of a touch input device. Mitigation is accomplished through selective touch surface sterilization and through touchscreen user interface reorganization. The touch surface includes a pixel array for illuminating selected portions of the touch surface with ultraviolet light of a sterilization wavelength based upon the received touch inputs. The selective illumination may occur while receiving a touch input or after an accumulation of touch inputs have been received. The user interface may also be reorganized based on received touch inputs in order to locate user interface icons to lesser touched locations of the touch surface.

Abstract: This disclosure provides methods and systems for mitigating pathogen transmission via a touch surface of a touch input device. Mitigation is accomplished through selective touch surface sterilization and through touchscreen user interface reorganization. The touch surface includes a pixel array for illuminating selected portions of the touch surface with ultraviolet light of a sterilization wavelength based upon the received touch inputs. The selective illumination may occur while receiving a touch input or after an accumulation of touch inputs have been received. The user interface may also be reorganized based on received touch inputs in order to locate user interface icons to lesser touched locations of the touch surface.

Abstract: This disclosure provides methods and systems for mitigating pathogen transmission via a touch surface of a touch input device. Mitigation is accomplished through selective touch surface sterilization and through touchscreen user interface reorganization. The touch surface includes a pixel array for illuminating selected portions of the touch surface with ultraviolet light of a sterilization wavelength based upon the received touch inputs. The selective illumination may occur while receiving a touch input or after an accumulation of touch inputs have been received. The user interface may also be reorganized based on received touch inputs in order to locate user interface icons to lesser touched locations of the touch surface.

Abstract: Embodiments include a method for fabricating a semiconductor device and the resulting structure comprising forming a semi-insulating bottom barrier on a semiconductor substrate. A channel is formed on the bottom barrier. A semi-insulating layer is epitaxially formed on the bottom barrier, laterally adjacent to the channel. The semi-insulating layer is formed in such a way that stress is induced onto the channel. A CMOS transistor is formed on the channel.

Abstract: Disclosed is a novel system and method for maintaining computing functionality when a client device must be used in a low-power state. More particularly, when a client device is placed in a low-power state, sleep mode, or even shut-down, this method transfers aspects of the machine state onto a virtual machine in the cloud. This virtual machine may then function as a partial or full emulator of the user's client machine and thus can be: 1) accessed; and 2) communicated with by the machine's owner or others who use the machine. As long as the client device is shutdown, the cloud continues to temporarily function as the user's machine. Numerous embodiments are disclosed including a “hybrid decomposition feature” in which the data on the client machine is prioritized and then transfer to a server, typically a virtual emulator, component by component or piecemeal manner or manner.

Abstract: Disclosed is a novel system and method for maintaining computing functionality when a client device must be used in a low-power state. More particularly, when a client device is placed in a low-power state, sleep mode, or even shut-down, this method transfers aspects of the machine state onto a virtual machine in the cloud. This virtual machine may then function as a partial or full emulator of the user's client machine and thus can be: 1) accessed; and 2) communicated with by the machine's owner or others who use the machine. As long as the client device is shutdown, the cloud continues to temporarily function as the user's machine. Numerous embodiments are disclosed including a “hybrid decomposition feature” in which the data on the client machine is prioritized and then transfer to a server, typically a virtual emulator, component by component or piecemeal manner or manner.

Abstract: Disclosed is a novel system and method for maintaining computing functionality when a client device must be used in a low-power state. More particularly, when a client device is placed in a low-power state, sleep mode, or even shut-down, this method transfers aspects of the machine state onto a virtual machine in the cloud. This virtual machine may then function as a partial or full emulator of the user's client machine and thus can be: 1) accessed; and 2) communicated with by the machine's owner or others who use the machine. As long as the client device is shutdown, the cloud continues to temporarily function as the user's machine. Numerous embodiments are disclosed including a “hybrid decomposition feature” in which the data on the client machine is prioritized and then transfer to a server, typically a virtual emulator, component by component or piecemeal manner or manner.

Abstract: Various dispensing devices, such as foaming soap pumps, are disclosed. The soap pump can include a fluid storage unit and a fluid handling unit. The fluid storage unit can include a reservoir that is configured to hold a quantity of product, such as liquid soap. The fluid handling unit can include a pumping assembly and dispensing assembly. The soap pump can be configured to withdraw liquid soap from the reservoir, convert the liquid soap to foamed soap, and dispense the foamed soap from the discharge assembly.

Abstract: A mirror assembly can include a housing, a mirror, and a light source. In some embodiments, the mirror comprises one or more adjustable sections. In certain embodiments, the mirror includes a light column configured to emit a substantially constant amount of light along a periphery of a mirror section. In some embodiments, the light column can produce various color temperatures. In some embodiments, the mirror assembly comprises a capacitive touch sensor that allows control of one or more features of the light emitted from the light source. In some embodiments, the mirror assembly includes a sensor assembly. The sensor assembly can be configured control on/off settings and other features of the emitted light.

Abstract: A disposable gate structure straddling a semiconductor fin is formed. A source region and a drain region are formed employing the disposable gate structure as an implantation mask. A planarization dielectric layer is formed such that a top surface of the planarization dielectric layer is coplanar with the disposable gate structure. A gate cavity is formed by removing the disposable gate structure. An epitaxial cap layer is deposited on physically exposed semiconductor surfaces of the semiconductor fin by selective epitaxy. A gate dielectric layer is formed on the epitaxial cap layer, and a gate electrode can be formed by filling the gate cavity. The epitaxial cap layer can include a material that reduces the density of interfacial defects at an interface with the gate dielectric layer.