Abstract: Provided sa a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.

Abstract: Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.

Abstract: Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate, a connection member formed on a top surface of the substrate, a semiconductor package mounted on the connection member, an encapsulation member formed to fill a space between a top portion of the substrate and a bottom portion of the semiconductor package, and a shielding material formed to cover the semiconductor package and the encapsulation member.

Abstract: Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.

Abstract: A storage device includes: a first semiconductor device mounted on a substrate; a housing accommodating the substrate, with the substrate fixed on a first fixing unit that is coupled to a first surface of the housing; and a first thermal conductive plate disposed between the first semiconductor device and the housing, with the first thermal conductive plate thermally connected to the housing, wherein the first thermal conductive plate has a thermal conductivity that is higher than that of the substrate. Thus, the storage device may dissipate heat generated by the semiconductor device rapidly to the outside or away from the storage device.

Abstract: A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.

Abstract: A semiconductor module and a data memory module having the same are provided. The semiconductor module includes a substrate having a semiconductor device, a ground terminal, a protection pattern, and a switching element. The ground terminal and the protection pattern are formed on the substrate. The switching element connects the ground terminal and the protection pattern in series. The switching element electrically connects the protection pattern and the ground terminal when a voltage applied to the substrate is beyond a set voltage range.

Abstract: Disclosed is a memory module which includes a memory chip; an external input/output terminal having an electrical signal input/output terminal and an optical signal input/output terminal; an optical signal processor configured to convert a first optical signal input through the optical signal input/output terminal into a first internal electrical signal and to convert a second internal electrical signal into a second optical signal; and a controller configured to provide a first data signal to the memory chip in response to a first external electrical signal input through the electrical signal input/output terminal or the first internal electrical signal and to transfer the second internal electrical signal to the optical signal processor or to output a second external electrical signal to the electrical signal input/output terminal in response to a second data signal output from the memory chip.

Abstract: Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.

Abstract: A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.

Abstract: Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.

Abstract: A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.

Abstract: A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.

Abstract: A memory module having a high data processing rate and high capacity is provided. The memory module may include a memory chip, a controller controlling an operation of the memory chip, an optical detector converting an external input signal into an internal input signal to transmit the converted signal to the controller, and an optical generator converting an internal output signal received from the controller into an external output signal. The optical detector converts an external input optical signal into an internal input signal to transmit the converted signal to the controller. The optical generator converts an internal output signal received from the controller into an external output optical signal.

Abstract: A semiconductor module and a data memory module having the same are provided. The semiconductor module includes a substrate having a semiconductor device, a ground terminal, a protection pattern, and a switching element. The ground terminal and the protection pattern are formed on the substrate. The switching element connects the ground terminal and the protection pattern in series. The switching element electrically connects the protection pattern and the ground terminal when a voltage applied to the substrate is beyond a set voltage range.

Abstract: A package may include a lower unit package and an upper unit package. Each of the unit packages may include a circuit substrate having a lower surface and an upper surface. Wire bonding pads may be provided of the lower surface of the circuit substrate, and chip bonding pads may be provided on the upper surface of the circuit substrate. An IC chip may be provided on the lower surface of the circuit substrate. The IC chip may have an active surface with wire lands and bump lands. Chip bumps may be provided on the bump land. The wire bonding pads of the circuit substrate may be connected to the wire lands of the IC chip using bonding wires. The chip bumps of the upper unit package may be connected to the chip bonding pads of the lower unit package. An IC chip may include a substrate. A conductive layer may be provided on the substrate. The conductive layer may define a bump land for supporting a chip bump and a wire land for connecting to a bonding wire.

Abstract: Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.

Abstract: An interposer may include a base substrate supporting an array of conductive lands. The conductive land may have an identical shape and size. The conductive lands may be provided at regular intervals on the base substrate. The conductive land pitch may be determined such that adjacent conductive lands may be electrically connected by one end of an electric connection member. Alternatively, each conductive land may provide respective bonding locations to which ends of two different electric connection members may be bonded. A stacked chip package may include an interposer that may be fabricated by cutting an interposer to size. In the stacked chip package, electrical connections may be made through the interposer between an upper semiconductor chip and a package substrate, between the upper semiconductor chip and a lower semiconductor chip, and/or between the lower semiconductor chip and the package substrate.