Abstract: A method for manufacturing a semiconductor structure comprises: a) providing a temporary substrate comprising a material having a coefficient of thermal expansion close to that of silicon carbide; b) forming an intermediate graphite layer on a front face of the temporary substrate; c) depositing, on the intermediate layer, a polycrystalline silicon carbide support layer having a thickness of between 10 microns and 200 microns, d) transferring a useful monocrystalline silicon carbide layer onto the support layer in order to form a composite structure, the transfer using molecular adhesion bonding, e) forming an active layer on the useful layer, and f) disassembling, at an interface of or inside the intermediate layer, to structure to form the semiconductor structure including the active layer, the useful layer and the support layer. A composite structure is obtained by the method.

Abstract: A donor substrate for transferring a single-crystal thin layer made of a first material, onto a receiver substrate. The donor substrate comprises: —a buried weakened plane delimiting an upper portion and a lower portion of the donor substrate, —in the upper portion, a first layer, a second layer adjacent to the buried weakened plane, and a stop layer between the first layer and the second layer the first layer composed of the first material, the stop layer being formed of a second material, —an amorphized sub-portion, made amorphous by ion implantation, having a thickness less than that of the upper portion, and including at least the first layer; the second layer comprising at least one single-crystal sub-layer, adjacent to the buried weakened plane. Two embodiments of a method may be used for transferring a single-crystal thin layer from the donor substrate.

Abstract: A method for producing a semiconductor structure comprises: a) providing a working layer of a semiconductor material; b) providing a carrier substrate of a semiconductor material; c) depositing a thin film of a semiconductor material different from that or those of the working layer and the carrier substrate on a free face to be joined of the working layer and/or the carrier substrate; d) directly joining the free faces of the working layer and the carrier substrate, e) annealing the joined structure at an elevated temperature to bring about segmentation of the encapsulated thin film and form a semiconductor structure comprising an interface region between the working layer and the carrier substrate, the interface region comprising: —regions of direct contact between the working layer and the carrier substrate; and —agglomerates comprising the semiconductor material of the thin film adjacent the regions of direct contact.

Abstract: A temporary substrate, which is detachable at a detachment temperature higher than 1000° C. comprises: a semiconductor working layer extending along a main plane, a carrier substrate, an intermediate layer having a thickness less than 20 nm arranged between the working layer and the carrier substrate, a bonding interface located in or adjacent the intermediate layer, gaseous atomic species distributed according to a concentration profile along the axis normal to the main plane, the atoms remaining trapped in the intermediate layer and/or in an adjacent layer of the carrier substrate with a thickness less than or equal to 10 nm and/or in an adjacent sublayer of the working layer with a thickness less than or equal to 10 nm when the temporary substrate is subjected to a temperature lower than the detachment temperature.

Abstract: A method for manufacturing a semiconductor structure or a photonic device, wherein the method comprises the steps of: providing a silicon nitride patterned layer over a carrier substrate; providing a first layer of a conformal oxide on the silicon nitride patterned layer such that it fully covers the silicon nitride patterned layer; and planarizing the first layer of conformal oxide to a predetermined thickness above the silicon nitride patterned layer to form a planarizing oxide layer. After the step of planarizing the first layer of conformal oxide, the method further comprises steps of clearing the silicon nitride patterned layer to form a dished silicon nitride patterned layer with a dishing height; and subsequently providing a second layer of a conformal oxide on or over the dished silicon nitride layer.

Abstract: The disclosure relates to a method of joining two semi-conductor substrates by molecular adhesion comprising: a step a) of bringing a first and a second substrate into intimate contact in order to form an assembly having a bonding interface; a step b) of reaction-annealing the bonding interface at a first temperature higher than a predetermined first temperature, this step b) generating bubbles at the joining interface; a step c) of at least partially debonding the two substrates at the bonding interface in order to eliminate the bubbles; and a step d) of bringing the first and the second substrate into intimate contact at the bonding interface in order to reform the assembly.

Abstract: The invention relates to a process for manufacturing a composite structure comprising a thin layer made of a first single-crystal material positioned on a support substrate.

Abstract: A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

Abstract: A process for producing a donor substrate for creating a three-dimensional integrated structure comprises the following steps: providing a semiconductor substrate comprising a surface layer, referred to as an active layer, and a layer comprising a plurality of cavities extending beneath the active layer, each cavity being separated from an adjacent cavity by a partition, forming an electronic device in a region of the active layer located plumb with a cavity, depositing a protective mask on the active layer so as to cover the electronic device while at the same time exposing a region of the active layer located plumb with each partition, and implanting atomic species through regions of the active layer exposed by the mask to form a weakened zone in each partition.

Abstract: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.

Abstract: A method for manufacturing a semiconductor structure or a photonic device, wherein the method comprises the steps of: providing a silicon nitride patterned layer over a carrier substrate; providing a first layer of a conformal oxide on the silicon nitride patterned layer such that it fully covers the silicon nitride patterned layer; and planarizing the first layer of conformal oxide to a predetermined thickness above the silicon nitride patterned layer to form a planarizing oxide layer. After the step of planarizing the first layer of conformal oxide, the method further comprises steps of clearing the silicon nitride patterned layer to form a dished silicon nitride patterned layer with a dishing height; and subsequently providing a second layer of a conformal oxide on or over the dished silicon nitride layer.

Abstract: A process for producing a donor substrate for creating a three-dimensional integrated structure comprises the following steps: providing a semiconductor substrate comprising a surface layer, referred to as an active layer, and a layer comprising a plurality of cavities extending beneath the active layer, each cavity being separated from an adjacent cavity by a partition, forming an electronic device in a region of the active layer located plumb with a cavity, depositing a protective mask on the active layer so as to cover the electronic device while at the same time exposing a region of the active layer located plumb with each partition, and implanting atomic species through regions of the active layer exposed by the mask to form a weakened zone in each partition.

Abstract: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.

Abstract: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.

Abstract: A method for manufacturing a semiconductor structure and to a photonic device, wherein the method comprises the steps of: providing a silicon nitride patterned layer over a carrier substrate; providing a first layer of a conformal oxide on the silicon nitride patterned layer such that it fully covers the silicon nitride patterned layer; and planarizing the first layer of conformal oxide to a predetermined thickness above the silicon nitride patterned layer to form a planarizing oxide layer. After the step of planarizing the first layer of conformal oxide, the method further comprises steps of clearing the silicon nitride patterned layer to form a dished silicon nitride patterned layer with a dishing height; and subsequently providing a second layer of a conformal oxide on or over the dished silicon nitride layer.

Abstract: Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa.

Abstract: A method for bonding a first wafer onto a second wafer by molecular adhesion where the wafers have an initial radial misalignment between them. The method includes bringing the two wafers into contact so as to initiate the propagation of a bonding wave between the two wafers while a predefined bonding curvature is imposed on at least one of the two wafers during the contacting step as a function of the initial radial misalignment.

Abstract: A method comprising the following steps: providing a support substrate and a donor substrate, forming an embrittlement region in the donor substrate so as to delimit a first portion and a second portion on either side of the embrittlement region, assembling the donor substrate on the support substrate, fracturing the donor substrate along the embrittlement region. In addition, the method comprises a step consisting of forming a compressive stress layer in the donor substrate so as to delimit a so-called confinement region interposed between the compressive stress layer and the embrittlement region.

Abstract: The invention relates to a process for fabricating a heterostructure comprising at least one thin layer and a carrier substrate made of a semiconductor, the process comprising: bonding a first substrate made of a single-crystal first material, the first substrate comprising a superficial layer made of a polycrystalline second material, to a second substrate so that a bonding interface is created between the polycrystalline layer and the second substrate; removing from the free surface of one of the substrates, called the donor substrate, a thickness thereof so that only a thin layer is preserved; generating a layer of amorphous semiconductor material between the first substrate and the bonding interface by amorphization of the layer of polycrystalline material; and crystallizing the layer of amorphous semiconductor material, the newly crystallized layer having the same orientation as the adjacent first substrate.

Abstract: A method comprising the following steps: providing a support substrate and a donor substrate, forming an embrittlement region in the donor substrate so as to delimit a first portion and a second portion on either side of the embrittlement region, assembling the donor substrate on the support substrate, fracturing the donor substrate along the embrittlement. In addition, the method comprises a step consisting of forming a compressive stress layer in the donor substrate so as to delimit a so-called confinement region interposed between the compressive stress layer and the embrittlement region.