Patents by Inventor Gweltaz Gaudin
Gweltaz Gaudin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210057268Abstract: A process for producing a donor substrate for creating a three-dimensional integrated structure comprises the following steps: providing a semiconductor substrate comprising a surface layer, referred to as an active layer, and a layer comprising a plurality of cavities extending beneath the active layer, each cavity being separated from an adjacent cavity by a partition, forming an electronic device in a region of the active layer located plumb with a cavity, depositing a protective mask on the active layer so as to cover the electronic device while at the same time exposing a region of the active layer located plumb with each partition, and implanting atomic species through regions of the active layer exposed by the mask to form a weakened zone in each partition.Type: ApplicationFiled: March 22, 2019Publication date: February 25, 2021Inventors: Gweltaz Gaudin, Didier Landru, Bruno Ghyselen
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Publication number: 20200336127Abstract: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.Type: ApplicationFiled: July 7, 2020Publication date: October 22, 2020Inventors: Gweltaz Gaudin, Isabelle Huyet
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Publication number: 20190372552Abstract: A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a free first surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer. The hybrid structure further comprises a trapping layer disposed between the useful layer and the support substrate, and at least one functional interface of predetermined roughness between the useful layer and the trapping layer.Type: ApplicationFiled: June 26, 2017Publication date: December 5, 2019Inventors: Gweltaz Gaudin, Isabelle Huyet
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Publication number: 20190187376Abstract: A method for manufacturing a semiconductor structure and to a photonic device, wherein the method comprises the steps of: providing a silicon nitride patterned layer over a carrier substrate; providing a first layer of a conformal oxide on the silicon nitride patterned layer such that it fully covers the silicon nitride patterned layer; and planarizing the first layer of conformal oxide to a predetermined thickness above the silicon nitride patterned layer to form a planarizing oxide layer. After the step of planarizing the first layer of conformal oxide, the method further comprises steps of clearing the silicon nitride patterned layer to form a dished silicon nitride patterned layer with a dishing height; and subsequently providing a second layer of a conformal oxide on or over the dished silicon nitride layer.Type: ApplicationFiled: July 27, 2017Publication date: June 20, 2019Inventors: Bich-Yen Nguyen, Gweltaz Gaudin
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Patent number: 9905531Abstract: Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa.Type: GrantFiled: June 5, 2013Date of Patent: February 27, 2018Assignee: SoitecInventors: Ionut Radu, Marcel Broekaart, Arnaud Castex, Gweltaz Gaudin, Gregory Riou
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Patent number: 9818614Abstract: A method for bonding a first wafer onto a second wafer by molecular adhesion where the wafers have an initial radial misalignment between them. The method includes bringing the two wafers into contact so as to initiate the propagation of a bonding wave between the two wafers while a predefined bonding curvature is imposed on at least one of the two wafers during the contacting step as a function of the initial radial misalignment.Type: GrantFiled: August 7, 2015Date of Patent: November 14, 2017Assignee: Sony Semiconductor Solutions CorporationInventor: Gweltaz Gaudin
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Patent number: 9548237Abstract: A method comprising the following steps: providing a support substrate and a donor substrate, forming an embrittlement region in the donor substrate so as to delimit a first portion and a second portion on either side of the embrittlement region, assembling the donor substrate on the support substrate, fracturing the donor substrate along the embrittlement region. In addition, the method comprises a step consisting of forming a compressive stress layer in the donor substrate so as to delimit a so-called confinement region interposed between the compressive stress layer and the embrittlement region.Type: GrantFiled: January 28, 2013Date of Patent: January 17, 2017Assignee: SOITECInventors: Gweltaz Gaudin, Oleg Kononchuk, Ionut Radu
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Patent number: 9330958Abstract: The invention relates to a process for fabricating a heterostructure comprising at least one thin layer and a carrier substrate made of a semiconductor, the process comprising: bonding a first substrate made of a single-crystal first material, the first substrate comprising a superficial layer made of a polycrystalline second material, to a second substrate so that a bonding interface is created between the polycrystalline layer and the second substrate; removing from the free surface of one of the substrates, called the donor substrate, a thickness thereof so that only a thin layer is preserved; generating a layer of amorphous semiconductor material between the first substrate and the bonding interface by amorphization of the layer of polycrystalline material; and crystallizing the layer of amorphous semiconductor material, the newly crystallized layer having the same orientation as the adjacent first substrate.Type: GrantFiled: November 21, 2012Date of Patent: May 3, 2016Assignee: SOITECInventor: Gweltaz Gaudin
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Publication number: 20150364364Abstract: A method comprising the following steps: providing a support substrate and a donor substrate, forming an embrittlement region in the donor substrate so as to delimit a first portion and a second portion on either side of the embrittlement region, assembling the donor substrate on the support substrate, fracturing the donor substrate along the embrittlement. In addition, the method comprises a step consisting of forming a compressive stress layer in the donor substrate so as to delimit a so-called confinement region interposed between the compressive stress layer and the embrittlement region.Type: ApplicationFiled: January 28, 2013Publication date: December 17, 2015Inventors: Gweltaz Gaudin, Oleg Kononchuk, Ionut Radu
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Publication number: 20150348933Abstract: A method for bonding a first wafer on a second wafer by molecular adhesion where the wafers have an initial radial misalignment between them. The method includes bringing the two wafers into contact so as to initiate the propagation of a bonding wave between the two wafers while a predefined bonding curvature is imposed on at least one of the two wafers during the contacting step as a function of the initial radial misalignment.Type: ApplicationFiled: August 7, 2015Publication date: December 3, 2015Inventor: Gweltaz Gaudin
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Patent number: 9123631Abstract: A method for bonding a first wafer on a second wafer by molecular adhesion where the wafers have an initial radial misalignment between them. The method includes bringing the two wafers into contact so as to initiate the propagation of a bonding wave between the two wafers while a predefined bonding curvature is imposed on at least one of the two wafers during the contacting step as a function of the initial radial misalignment.Type: GrantFiled: March 15, 2013Date of Patent: September 1, 2015Assignee: SOITECInventor: Gweltaz Gaudin
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Patent number: 9117686Abstract: The invention relates to a process for assembling a first element that includes at least one first wafer, substrate or at least one chip, and a second element of at least one second wafer or substrate, involving the formation of a surface layer, known as a bonding layer, on each substrate, at least one of the bonding layers being formed at a temperature less than or equal to 300° C.; conducting a first annealing, known as degassing annealing, of the bonding layers, before assembly, at least partly at a temperature at least equal to the subsequent bonding interface strengthening temperature but below 450° C.; forming an assembling of the substrates by bringing into contact the exposed surfaces of the bonding layers, and conducting an annealing of the assembled structure at a bonding interface strengthening temperature below 450° C.Type: GrantFiled: July 17, 2014Date of Patent: August 25, 2015Assignee: SOITECInventor: Gweltaz Gaudin
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Publication number: 20150179603Abstract: Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa.Type: ApplicationFiled: June 5, 2013Publication date: June 25, 2015Inventors: Ionut Radu, Marcel Broekaart, Arnaud Castex, Gweltaz Gaudin, Gregory Riou
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Publication number: 20150132923Abstract: The invention relates to a process for fabricating a heterostructure comprising at least one thin layer and a carrier substrate made of a semiconductor, the process comprising: bonding a first substrate made of a single-crystal first material, the first substrate comprising a superficial layer made of a polycrystalline second material, to a second substrate so that a bonding interface is created between the polycrystalline layer and the second substrate; removing from the free surface of one of the substrates, called the donor substrate, a thickness thereof so that only a thin layer is preserved; generating a layer of amorphous semiconductor material between the first substrate and the bonding interface by amorphization of the layer of polycrystalline material; and crystallizing the layer of amorphous semiconductor material, the newly crystallized layer having the same orientation as the adjacent first substrate.Type: ApplicationFiled: November 21, 2012Publication date: May 14, 2015Inventor: Gweltaz Gaudin
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Patent number: 8999090Abstract: The invention relates to a method for bonding two substrates, in particular, two semiconductor substrates that, in order to be able to improve the reliability of the process, provides the step of providing a gaseous flow over the bonding surfaces of the substrates. The gaseous flow is preferably a laminar flow that is essentially parallel to the bonding surfaces of the substrates, and has a temperature in a range of from room temperature up to 100° C.Type: GrantFiled: January 24, 2013Date of Patent: April 7, 2015Assignee: SOITECInventors: Gweltaz Gaudin, Fabrice Lallement, Cyrille Colnat, Pascale Giard
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Publication number: 20140327113Abstract: The invention relates to a process for assembling a first element that includes at least one first wafer, substrate or at least one chip, and a second element of at least one second wafer or substrate, involving the formation of a surface layer, known as a bonding layer, on each substrate, at least one of the bonding layers being formed at a temperature less than or equal to 300° C.; conducting a first annealing, known as degassing annealing, of the bonding layers, before assembly, at least partly at a temperature at least equal to the subsequent bonding interface strengthening temperature but below 450° C.; forming an assembling of the substrates by bringing into contact the exposed surfaces of the bonding layers, and conducting an annealing of the assembled structure at a bonding interface strengthening temperature below 450° C.Type: ApplicationFiled: July 17, 2014Publication date: November 6, 2014Inventor: Gweltaz Gaudin
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Publication number: 20140225182Abstract: A substrate comprises a base wafer, an insulating layer over the base wafer, and a top semiconductor layer over the insulating layer on a side thereof opposite the base wafer. The insulating layer comprises a charge-confining layer confined on one or both sides with diffusion barrier layers, wherein the charge-confining layer has a density of charges in absolute value higher than 1010 charges/cm2. Alternatively, the insulating layer comprises charge-trapping islands embedded therein, wherein the charge-trapping islands have a total density of charges in absolute value higher than 1010 charges/cm2.Type: ApplicationFiled: April 15, 2014Publication date: August 14, 2014Applicant: SoitecInventors: Mohamad A. Shaheen, Frederic Allibert, Gweltaz Gaudin, Fabrice Lallement, Didier Landru, Karine Landry, Carlos Mazure
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Patent number: 8790992Abstract: The invention relates to a process for assembling a first element that includes at least one first wafer, substrate or at least one chip, and a second element of at least one second wafer or substrate, involving the formation of a surface layer, known as the bonding layer, on each substrate, at least one of these bonding layers being formed at a temperature less than or equal to 300° C.; conducting a first annealing, known as degassing annealing, of the bonding layers, before assembly, at least partly at a temperature at least equal to the subsequent bonding interface strengthening temperature but below 450° C.; forming an assembling of the substrates by bringing into contact the exposed surfaces of the bonding layers, and conducting an annealing of the assembled structure at a bonding interface strengthening temperature below 450° C.Type: GrantFiled: October 14, 2010Date of Patent: July 29, 2014Assignee: SoitecInventor: Gweltaz Gaudin
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Patent number: 8735946Abstract: Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 1010 charges/cm2. The invention also relates to processes for making such substrates.Type: GrantFiled: September 16, 2013Date of Patent: May 27, 2014Assignee: SoitecInventors: Mohamad A Shaheen, Frederic Allibert, Gweltaz Gaudin, Fabrice Lallement, Didier Landru, Karine Landry, Carlos Mazure
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Publication number: 20140015023Abstract: Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 1010 charges/cm2. The invention also relates to processes for making such substrates.Type: ApplicationFiled: September 16, 2013Publication date: January 16, 2014Applicant: SoitecInventors: Frederic Allibert, Gweltaz Gaudin, Fabrice Lallement, Didier Landru, Karine Landry, Carlos Mazure, Mohamad A. Shaheen