Abstract: A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.

Abstract: A sputtering apparatus for manufacturing semiconductor devices, and a sputtering method using the same, allows for the formation of metal layers having good step coverage and good deposition rate. The sputtering apparatus for manufacturing semiconductor devices includes a process chamber; a target; a backing plate for the target; a cooling gas line on or in the backing plate, such that a cooling gas for cooling the target is circulated through the cooling gas line; and a cooling gas supply apparatus for supplying, discharging and recirculating cooling gas to and from the cooling gas line of the backing plate. The sputtering process is carried out with a high frequency power applied at 15 kW to 45 kW, argon gas supplied at 3 sccm to 10 sccm, and inner pressure in the process chamber at 0.1 mTorr to 1 mTorr. This sputtering apparatus does not require a collimator, therefore none of the particles generated when using a collimator are present to damage the wafers processed in this apparatus.

Abstract: A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.