Patents by Inventor Gyu-Chul Yi
Gyu-Chul Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9853106Abstract: Provided are a nano-structure assembly including an insulating substrate; and a nano-structure formed on the insulating substrate, and a nano-device including the same.Type: GrantFiled: July 1, 2013Date of Patent: December 26, 2017Assignee: SNU R&DB FoundationInventors: Gyu Chul Yi, Hong Seok Oh
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Patent number: 9343624Abstract: A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.Type: GrantFiled: November 24, 2014Date of Patent: May 17, 2016Assignees: LG ELECTRONICS INC., LG Innotek Co., Ltd.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Publication number: 20160035838Abstract: Provided are a nano-structure assembly including an insulating substrate; and a nano-structure formed on the insulating substrate, and a nano-device including the same.Type: ApplicationFiled: July 1, 2013Publication date: February 4, 2016Inventors: Gyu Chul YI, Hong Seck Oh
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Publication number: 20150102370Abstract: A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.Type: ApplicationFiled: November 24, 2014Publication date: April 16, 2015Applicants: LG INNOTEK CO., LTD., LG ELECTRONICS INC.Inventors: Jong Wook KIM, Hyun Kyong CHO, Gyu Chul YI, Sung Jin AN, Jin Kyoung YOO, Young Joon HONG
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Patent number: 8912556Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: GrantFiled: January 6, 2014Date of Patent: December 16, 2014Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Patent number: 8878231Abstract: The present invention provides a light emission device and a manufacturing method thereof. The light emission device includes: i) a substrate; ii) a mask layer disposed on the substrate and having at least one opening; iii) a light emission structure formed on the mask layer surrounding the opening and extended substantially perpendicular to a surface of the substrate; iv) a first electrode formed on the mask layer while surface-contacting the external surface of the light emission structure; and v) a second electrode disposed in the light emission structure and surface-contacting the internal surface of the light emission structure.Type: GrantFiled: May 18, 2010Date of Patent: November 4, 2014Assignee: SNU R&DB FoundationInventors: Gyu-Chul Yi, Chul-Ho Lee
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Publication number: 20140291690Abstract: Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous substrate; a current injection layer formed on the substrate; a graphite layer formed on the current injection layer; and a semiconductor unit formed on the graphite layer, wherein the semiconductor unit is formed after forming the graphite layer on the amorphous substrate, thereby overcoming the problems of conventional methods that involve forming a semiconductor unit on an amorphous substrate, and the semiconductor unit of the present invention has superior crystallinity.Type: ApplicationFiled: August 14, 2012Publication date: October 2, 2014Applicant: SNU R&DB FOUNDATIONInventors: Gyu-chul Yi, Kunook Chung
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Publication number: 20140117378Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: ApplicationFiled: January 6, 2014Publication date: May 1, 2014Applicants: LG Innotek Co., Ltd., LG Electronics Inc.Inventors: Jong Wook KIM, Hyun Kyong CHO, Gyu Chul YI, Sung Jin AN, Jin Kyoung YOO, Young Joon HONG
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Patent number: 8664641Abstract: Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.Type: GrantFiled: May 27, 2010Date of Patent: March 4, 2014Assignee: SNU R&DB FoundationInventors: Gyu-chul Yi, Yong-Jin Kim
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Patent number: 8643035Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: GrantFiled: June 5, 2012Date of Patent: February 4, 2014Assignee: LG Electronics Inc.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Patent number: 8598607Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: GrantFiled: March 24, 2010Date of Patent: December 3, 2013Assignees: LG Electronics Inc., LG Innotek Co., Ltd.Inventors: Jong Wook Kim, Hyun Kyong Cho, Gyu Chul Yi, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Patent number: 8357922Abstract: A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate.Type: GrantFiled: February 5, 2008Date of Patent: January 22, 2013Assignee: LG Display Co., Ltd.Inventors: Young-Joon Hong, Gyu-Chul Yi
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Publication number: 20120241757Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.Type: ApplicationFiled: June 5, 2012Publication date: September 27, 2012Inventors: Jong Wook KIM, Hyun Kyong Cho, Gyu Chul YI, Sung Jin An, Jin Kyoung Yoo, Young Joon Hong
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Patent number: 8242676Abstract: A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.Type: GrantFiled: June 23, 2009Date of Patent: August 14, 2012Assignee: LG Display Co., Ltd.Inventors: Yong-Jin Kim, Jin-Kyoung Yoo, Young-Joon Hong, Gyu-Chul Yi, Chul-Ho Lee
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Publication number: 20120132892Abstract: Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.Type: ApplicationFiled: May 27, 2010Publication date: May 31, 2012Applicant: SNU R&DB FOUNDATIONInventors: Gyu-chul Yi, Yong-Jin Kim
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Publication number: 20120111801Abstract: Disclosed is a near-field photocatalyst using a ZnO (ZnO) nanowire. The photocatalyst is advantageous in that low-priced zinc is used instead of titanium, conventionally used as a photocatalyst to reduce expenses, and that it is possible to obtain overvoltage which is sufficient to generate hydrogen using an optical near field formed around an end of a ZnO nanowire without the application of additional external voltage, thus the use of a costly electrode, such as platinum, is avoided and a process is simplified.Type: ApplicationFiled: August 31, 2005Publication date: May 10, 2012Applicants: Seoul National University R & DB Foundation, POSTECH FOUNDATIONInventors: Gyu-chul Yi, Motoichi Ohtsu, Takashi Yatsui
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Publication number: 20120061646Abstract: The present invention provides a light emission device and a manufacturing method thereof. The light emission device includes: i) a substrate; ii) a mask layer disposed on the substrate and having at least one opening; iii) a light emission structure formed on the mask layer surrounding the opening and extended substantially perpendicular to a surface of the substrate; iv) a first electrode formed on the mask layer while surface-contacting the external surface of the light emission structure; and v) a second electrode disposed in the light emission structure and surface-contacting the internal surface of the light emission structure.Type: ApplicationFiled: May 18, 2010Publication date: March 15, 2012Applicant: SUN R&DB FOUNDATIONInventors: Gyu-Chul Yi, Chul-Ho Lee
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Patent number: 8022432Abstract: Disclosed herein is an electrical light-emitting device including a transparent conductive nanorod type electrode, in which transparent conductive nanorods grown perpendicular to a light-emitting layer are used as the electrode. Hence, light is not absorbed by the electrode, and tunneling easily occurs due to nanocontact of the nanorods, thus increasing current injection efficiency, and also, total internal reflections decrease. Thereby, the light-emitting device according to this invention has light-emitting properties and luminous efficiency superior to conventional light-emitting devices, including metal electrodes or thin film type transparent electrodes.Type: GrantFiled: August 19, 2005Date of Patent: September 20, 2011Assignee: LG Display Co., Ltd.Inventors: Gyu-chul Yi, Sung-Jin An
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Patent number: 8003192Abstract: A nanodevice including a nanorod and a method for manufacturing the same is provided. The nanodevice according to an embodiment of the present invention includes i) a substrate; ii) at least one crystal that is located on the substrate and includes a plurality of side surfaces forming an angle with each other; and iii) at least one nanorod that is located on the crystal and extends along a direction that is substantially perpendicular to a surface of the substrate.Type: GrantFiled: April 18, 2008Date of Patent: August 23, 2011Assignee: LG Display Co., Ltd.Inventors: Young-Joon Hong, Gyu-Chul Yi
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Publication number: 20110017973Abstract: A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate.Type: ApplicationFiled: February 5, 2008Publication date: January 27, 2011Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATIONInventors: Young-Joon Hong, Gyu-Chul Yi